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1.5 W Small Signal Bipolar Junction Transistors (BJT) 70

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSA93RLRMG by Onsemi

MPSA93RLRMG

Onsemi

MPSA93RLRMG by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for small signal applications in electronics due to its hFE of 25, fT of 50MHz, and operating temperature up to 150 °C. Package style is cylindrical with through-hole terminals.

.5 A

200 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

2N4401RLRMG by Onsemi

2N4401RLRMG

Onsemi

2N4401RLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).

.6 A

40 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

255 ns

35 ns

2N4403RLG by Onsemi

2N4403RLG

Onsemi

2N4403RLG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).

EUROPEAN PART NUMBER

.6 A

40 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

255 ns

35 ns

BC337-16RL1G by Onsemi

BC337-16RL1G

Onsemi

BC337-16RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. Ideal for amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A in a cylindrical package style.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

210 MHz

BC337ZL1G by Onsemi

BC337ZL1G

Onsemi

BC337ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. It is commonly used in amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A, making it suitable for various electronic circuits requiring signal amplification.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC338-25ZL1G by Onsemi

BC338-25ZL1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A;

EUROPEAN PART NUMBER

.8 A

25 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC368G by Onsemi

BC368G

Onsemi

BC368G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1.5W, hFE of 85, and operates up to 150 °C. With a max VCE of 20V and IC of 1A, it offers reliable performance in various electronic circuits.

1 A

20 V

SINGLE

85

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

65 MHz

BC447G by Onsemi

BC447G

Onsemi

BC447G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor with hFE of at least 50, operating up to 150 °C, and featuring a nominal transition frequency of 200MHz.

.3 A

80 V

SINGLE

50

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

BC490G by Onsemi

BC490G

Onsemi

BC490G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 1.5W, hFE of 15, and can handle up to 80V collector-emitter voltage. With a max operating temp of 150°C and fT of 150MHz, it's suitable for various electronic circuits requiring high-speed switching capabilities.

1 A

80 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

BC550CG by Onsemi

BC550CG

Onsemi

BC550CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 420 and can handle a max collector current of 0.1A. With a max operating temperature of 150°C and a collector-emitter voltage of 45V, it is suitable for various electronic projects.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

250 MHz

BC638G by Onsemi

BC638G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

.5 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SILICON

150 MHz

BC640G by Onsemi

BC640G

Onsemi

BC640G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and hFE of 40. Ideal for applications requiring a max. collector-emitter voltage of 80V, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.

.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SILICON

150 MHz

BSP19AT1G by Onsemi

BSP19AT1G

Onsemi

BSP19AT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 350V, max power dissipation of 1.5W, and min DC current gain of 40. With a package style of small outline and surface mount capability, it is ideal for compact electronic devices requiring high-speed switching capabilities.

COLLECTOR

.1 A

350 V

SINGLE

40

TO-261AA

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

70 MHz

MPS2222RLRAG by Onsemi

MPS2222RLRAG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;

.6 A

30 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

MPS2222RLRMG by Onsemi

MPS2222RLRMG

Onsemi

MPS2222RLRMG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W in a cylindrical package with through-hole terminals.

.6 A

30 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

MPS2222RLRPG by Onsemi

MPS2222RLRPG

Onsemi

MPS2222RLRPG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W and operates up to 150 °C. Its through-hole package makes it suitable for various electronic designs.

.6 A

30 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

250 MHz

PN2222G by Onsemi

PN2222G

Onsemi

PN2222G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 75, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (250MHz). Its through-hole package makes it suitable for various electronic designs.

.6 A

30 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

285 ns

35 ns

PN2222ARLRMG by Onsemi

PN2222ARLRMG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

BC558CZL1G by Onsemi

BC558CZL1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 360 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

360 MHz

2SA1020G by Onsemi

2SA1020G

Onsemi

2SA1020G by Onsemi is a PNP BJT with max power dissipation of 1.5W, hFE of 40, and max operating temp of 150 °C. Ideal for applications requiring a single configuration transistor with max collector-emitter voltage of 50V, such as amplifiers or signal processing circuits.

2 A

50 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

2SA1020RLRAG by Onsemi

2SA1020RLRAG

Onsemi

2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.

2 A

50 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

ZTX751QSTZ by Diodes Incorporated

ZTX751QSTZ

Diodes Incorporated

ZTX751QSTZ by Diodes Inc. is a PNP BJT with 1.5W power dissipation, 100 min hFE, and 2A max IC. Ideal for applications requiring high current amplification in a single configuration at up to 200°C operating temperature.

2 A

SINGLE

100

e3

1

200 Cel

260

PNP

1.5 W

Other Transistors

NO

MATTE TIN

30

100 MHz