Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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APT13005SI-G1
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;
3.2 A
450 V
SINGLE
11
TO-251
R-PSIP-T3
e3
1
3
150 Cel
-65 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
260
NPN
NO
MATTE TIN
THROUGH-HOLE
30
SWITCHING
SILICON
4 MHz
APT13005STF-G1
ISOLATED
TO-220AB
R-PSFM-T3
FLANGE MOUNT
APT13005SU-G1
Diodes Inc.'s APT13005SU-G1 is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications. With a max. collector current of 3.2A and transition frequency of 4MHz, it operates b/w -65 to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.
TO-126
NTE196
Nte Electronics
NTE196 by Nte Electronics is a NPN BJT transistor with 50W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.
COLLECTOR
7 A
70 V
2.3
NOT SPECIFIED
50 W
Not Qualified
Other Transistors
DXT13003EK-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY;
1.5 A
460 V
5
TO-252
R-PSSO-G2
2
SMALL OUTLINE
YES
Matte Tin (Sn)
GULL WING
NJL21193DG
Onsemi
NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.
16 A
250 V
SINGLE WITH BUILT-IN DIODE
8
R-PSFM-T5
PNP
TIN
AMPLIFIER
NJL21194DG
NJL21194DG by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications, it features a single configuration with built-in diode in a rectangular flange mount package.
NJW21193G
NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.
200 W
MJW21193
MJW21193 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.
TO-247
e0
235
TIN LEAD
MJW21194
MJW21194 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package body and flange mount style make it suitable for through-hole mounting in various electronic devices.
MJW21195
MJW21195 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.
TO-247AD
MJW21196
MJW21196 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon transistor element material. The package style is flange mount with through-hole terminals.
APT13005DI-G1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY;
4 A
DARLINGTON WITH BUILT-IN DIODE
APT13005DT-G1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): FLANGE MOUNT;
APT13005DTF-G1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 8;
DXT13003DK-13
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR;
BDW47G
BDW47G by Onsemi is a PNP power BJT with 85W max power dissipation, 100V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a min hFE of 250 and fT of 4MHz.
15 A
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
250
85 W
MJ21193G
MJ21193G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power setups.
TO-204AA
O-MBFM-P2
200 Cel
METAL
ROUND
250 W
PIN/PEG
BOTTOM
MJW21191G
The Onsemi MJW21191G is a PNP BJT transistor with 150V VCE, 8A IC, and 125W power dissipation. Ideal for amplifier applications, it has a min hFE of 5 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.
8 A
150 V
TO-247AE
125 W
MJW21192G
MJW21192G by Onsemi is a NPN Power BJT with 125W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material.
2N5885G
The Onsemi 2N5885G is a NPN BJT transistor with max. power dissipation of 200W, max. collector current of 25A, and max. collector-emitter voltage of 60V. It is used for switching applications due to its single configuration and high transition frequency of 4MHz in a round package style.
25 A
60 V
4
BUX85G
BUX85G by Onsemi is a NPN power BJT with max. collector-emitter voltage of 450V, max. collector current of 2A, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and high transition frequency of 4MHz in a rectangular package style suitable for flange mounting.
LEADFORM OPTIONS ARE AVAILABLE
2 A
40 W
2N5883G
Onsemi's 2N5883G is a PNP BJT with max. collector current of 25A and power dissipation of 200W. Ideal for switching applications, it operates at up to 200°C with a max. VCE of 60V. The transistor features a single configuration in round package style, making it suitable for high-power electronic systems.
2N6040G
2N6040G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode, and resistor. It has a max collector-emitter voltage of 60V, max current of 8A, and min DC current gain of 1000. Ideal for switching applications due to its high power dissipation of 75W and operating temp up to 150°C.
1000
75 W
2N6286G
2N6286G by Onsemi is a PNP power BJT with a max collector current of 20A and a min DC current gain of 100. It features a built-in diode and resistor, making it suitable for amplifier applications. With a max power dissipation of 160W and an operating temperature up to 200 °C, it offers reliable performance in various high-power circuits.
20 A
80 V
100
160 W
BDW42G
The Onsemi BDW42G is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 250, and IC of 15A. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various electronic designs.
200 pF
-55 Cel
3 V
BDW46G
The Onsemi BDW46G is a PNP power BJT with 85W max power dissipation, 80V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 250 and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
BDX54BG
BDX54BG by Onsemi is a PNP power BJT with 60W max power dissipation, 80V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating at up to 150°C, it has a min hFE of 750 and fT of 4MHz.
750
60 W
MJ11012G
MJ11012G by Onsemi is a NPN BJT with 200W power dissipation, 60V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and matte tin terminal finish.
30 A
200
MJ15022G
The Onsemi MJ15022G is a NPN BJT transistor with 200V VCEO and 16A IC, ideal for amplifier applications. With a max power dissipation of 250W, it operates up to 200°C. Featuring a single configuration in a round package style, it has a min hFE of 5 and fT of 4MHz.
200 V
MJ15023G
The Onsemi MJ15023G is a PNP BJT transistor with 200V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 5. Its metal package with flange mount style ensures efficient heat dissipation at up to 200°C operating temperature.
MJE13009G
MJE13009G by Onsemi is a NPN BJT transistor with 400V VCEO, 12A IC, and 2W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 6. Packaged in plastic/epoxy with flange mount style, it operates up to 150 °C making it suitable for various industrial uses.
12 A
400 V
6
2 W
Tin (Sn)
MJL21195G
MJL21195G by Onsemi is a PNP BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's package style is flange mount with through-hole terminals in a rectangular shape.
TO-264AA
MJL21196G
The Onsemi MJL21196G is a NPN BJT transistor with 200W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max current of 16A, and transition frequency of 4MHz. The package style is flange mount with through-hole terminals in a rectangular shape.
MJW21194G
MJW21194G by Onsemi is a NPN Power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-temperature environments up to 150°C.
TIP140G
TIP140G by Onsemi is a NPN power BJT with 125W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates at up to 150°C and has a min DC current gain of 500 (hFE).
10 A
500
TIP141G
TIP141G by Onsemi is a NPN Power BJT with 125W power dissipation, 80V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 500 and operating temperature up to 150°C, this transistor is suitable for various high-power electronic designs.
TIP145G
TIP145G by Onsemi is a PNP BJT with 125W power dissipation, 60V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With a min hFE of 500 and max operating temp of 150 °C, this transistor is suitable for high-power requirements.
TO-218
2N3716PBFREE
Central Semiconductor
2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.
400 ns
TO-3
150 W
MATTE TIN OVER NICKEL
700 ns
.8 V
2N6055PBFREE
2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.
DARLINGTON
2N6107PBFREE
2N6107PBFREE by Central Semiconductor is a PNP BJT with hFE of 30, VCEO of 70V, and IC of 7A. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style with through-hole terminals in a rectangular package shape.
2N6052PBFREE
2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.
500 pF
10
MJE13005PBFREE
MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.
130 pF
900 ns
4900 ns
800 ns
1 V
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