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2N5885G

Onsemi

2N5885G by Onsemi

The Onsemi 2N5885G is a NPN BJT transistor with max. power dissipation of 200W, max. collector current of 25A, and max. collector-emitter voltage of 60V. It is used for switching applications due to its single configuration and high transition frequency of 4MHz in a round package style.

Median Price

$4.425

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 58 parts In-Stock

1+ parts

$5.510

100+ parts

$3.220

1k+ parts

-

10k+ parts

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58

$5.510

$3.220

-

-

Element14

Singapore . 50 parts In-Stock

1+ parts

$9.880

100+ parts

$7.400

1k+ parts

$5.610

10k+ parts

$5.400

50

$9.880

$7.400

$5.610

$5.400

Rochester

USA . 2,652 parts In-Stock

1+ parts

-

100+ parts

$3.540

1k+ parts

$3.170

10k+ parts

$2.980

2,652

-

$3.540

$3.170

$2.980

Verical

USA . 2,572 parts In-Stock

1+ parts

-

100+ parts

$4.425

1k+ parts

$3.962

10k+ parts

$3.725

2,572

-

$4.425

$3.962

$3.725

Arrow

USA . 33 parts In-Stock

1+ parts

-

100+ parts

$3.150

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-

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33

-

$3.150

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Distributors (In-Stock)

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DF Sales Co.

USA . 650 parts In-Stock

1+ parts

$2.850

100+ parts

-

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650

$2.850

-

-

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DF Sales Co.

USA . 650 parts In-Stock

1+ parts

$2.850

100+ parts

-

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650

$2.850

-

-

-

Digiode

USA . 404 parts In-Stock

1+ parts

$3.752

100+ parts

-

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404

$3.752

-

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Vyrian

USA . 5,731 parts In-Stock

1+ parts

-

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5,731

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VNN

France . 5,076 parts In-Stock

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5,076

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Flip Electronics

USA . 400 parts In-Stock

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400

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,749 parts In-Stock

1+ parts

$2.710

100+ parts

-

1k+ parts

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2,749

$2.710

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-

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Corohmni

South Africa . 241 parts In-Stock

1+ parts

$2.850

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241

$2.850

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Corphita

USA . 958 parts In-Stock

1+ parts

$3.555

100+ parts

-

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958

$3.555

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Continental Prestige Electronics

USA . 6,489 parts In-Stock

1+ parts

$5.450

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6,489

$5.450

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AZTECH Wire

Italy . 307 parts In-Stock

1+ parts

$17.120

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307

$17.120

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Problanco Electronics

Mexico . 7,585 parts In-Stock

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7,585

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Kulean Microsystems

USA . 5,804 parts In-Stock

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5,804

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TANS Electronics

Latvia . 5,411 parts In-Stock

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5,411

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Microchip USA

USA . 5,151 parts In-Stock

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5,151

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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SupplyDigital Components

Austria . 1,417 parts In-Stock

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1,417

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 977 parts In-Stock

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977

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Perfect Parts

USA . 587 parts In-Stock

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587

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GreenTree Electronics

Israel . 70 parts In-Stock

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70

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Kepictronics

USA . 40 parts In-Stock

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40

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Overview

Unlock the power of innovation with the 2N5885G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by the trusted brand Onsemi, this NPN transistor offers unparalleled reliability and performance. Ideal for a variety of electronic projects, the 2N5885G delivers exceptional value with its high power dissipation, low DC current gain, and versatile package design. Experience the advantage of superior technology with the 2N5885G and take your projects to new heights.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides good thermal conductivity and durability, ensuring efficient heat dissipation and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making them versatile and widely compatible.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in controlling electronic circuits.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows for handling heavy loads and ensures reliable operation under demanding conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides a safety margin and allows for use in a wide range of voltage applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5885G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5885G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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