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BUX85G

Onsemi

BUX85G by Onsemi

BUX85G by Onsemi is a NPN power BJT with max. collector-emitter voltage of 450V, max. collector current of 2A, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and high transition frequency of 4MHz in a rectangular package style suitable for flange mounting.

Median Price

$0.406

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 28,193 parts In-Stock

1+ parts

$0.430

100+ parts

$0.420

1k+ parts

$0.410

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28,193

$0.430

$0.420

$0.410

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Distrelec

Netherlands . 134 parts In-Stock

1+ parts

$0.842

100+ parts

$0.598

1k+ parts

$0.388

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134

$0.842

$0.598

$0.388

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Mouser Electronics

USA . 417 parts In-Stock

1+ parts

$1.130

100+ parts

$0.449

1k+ parts

$0.362

10k+ parts

$0.343

417

$1.130

$0.449

$0.362

$0.343

Verical

USA . 2,750 parts In-Stock

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-

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$0.381

10k+ parts

$0.367

2,750

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-

$0.381

$0.367

Master Electronics

USA . 2,750 parts In-Stock

1+ parts

-

100+ parts

$0.358

1k+ parts

$0.324

10k+ parts

$0.295

2,750

-

$0.358

$0.324

$0.295

Arrow

USA . 1,200 parts In-Stock

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-

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$0.323

1,200

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-

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$0.323

RS (Exports)

UK . 170 parts In-Stock

1+ parts

-

100+ parts

$0.589

1k+ parts

$0.433

10k+ parts

$0.432

170

-

$0.589

$0.433

$0.432

Chip1Stop

Japan . 117 parts In-Stock

1+ parts

-

100+ parts

$0.274

1k+ parts

$0.271

10k+ parts

$0.270

117

-

$0.274

$0.271

$0.270

Distributors (In-Stock)

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DF Sales Co.

USA . 21 parts In-Stock

1+ parts

$0.400

100+ parts

-

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21

$0.400

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DF Sales Co.

USA . 21 parts In-Stock

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$0.400

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21

$0.400

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Digiode

USA . 1,776 parts In-Stock

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$0.415

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1,776

$0.415

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TME

Poland . 448 parts In-Stock

1+ parts

$0.760

100+ parts

$0.360

1k+ parts

$0.330

10k+ parts

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448

$0.760

$0.360

$0.330

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Component Electronics Inc.

Canada . 10 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

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10

$1.540

$1.150

$1.000

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VNN

France . 3,218 parts In-Stock

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3,218

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IBS Electronics

USA . 3,200 parts In-Stock

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$0.466

1k+ parts

$0.421

10k+ parts

$0.383

3,200

-

$0.466

$0.421

$0.383

Vyrian

USA . 2,813 parts In-Stock

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2,813

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Electro Sonic

Canada . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.375

1k+ parts

$0.338

10k+ parts

$0.307

2,000

-

$0.375

$0.338

$0.307

NAC Semi

USA . 1,150 parts In-Stock

1+ parts

-

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$0.558

10k+ parts

$0.515

1,150

-

-

$0.558

$0.515

LWI Electronics Inc

India . 500 parts In-Stock

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500

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Schukat

Germany . 300 parts In-Stock

1+ parts

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100+ parts

$0.456

1k+ parts

$0.390

10k+ parts

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300

-

$0.456

$0.390

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First Choice Components Inc.

USA . 150 parts In-Stock

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150

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Mil-Aero Solutions, Inc.

USA . 123 parts In-Stock

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123

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Euro-Tech

UK . 116 parts In-Stock

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116

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LIBRA Elektronik GmbH

Germany . 108 parts In-Stock

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108

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Corel Iberica Componentes, S.L.

Spain . 50 parts In-Stock

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50

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A2Z Electronics, Inc.

USA . 25 parts In-Stock

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25

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ComSIT Distribution GmbH

Germany . 23 parts In-Stock

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23

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Nova Conductors

Japan . 15 parts In-Stock

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15

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ACDS - Activité Composants Distribution Service

France . 14 parts In-Stock

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14

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Holdelec - ElecDif-Pro

France . 14 parts In-Stock

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14

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LittleDiode

UK . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,293 parts In-Stock

1+ parts

$0.233

100+ parts

$0.227

1k+ parts

$0.226

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-

1,293

$0.233

$0.227

$0.226

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Ampacity Inc.

Singapore . 778 parts In-Stock

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$0.233

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778

$0.233

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Corohmni

South Africa . 190 parts In-Stock

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$0.260

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190

$0.260

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Corphita

USA . 1,842 parts In-Stock

1+ parts

$0.393

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1,842

$0.393

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Continental Prestige Electronics

USA . 2,839 parts In-Stock

1+ parts

$0.762

100+ parts

$0.539

1k+ parts

$0.341

10k+ parts

$0.296

2,839

$0.762

$0.539

$0.341

$0.296

Perfect Parts

USA . 79,292 parts In-Stock

1+ parts

-

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79,292

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Robosynatics

Brazil . 7,840 parts In-Stock

1+ parts

-

100+ parts

$0.429

1k+ parts

$0.420

10k+ parts

$0.420

7,840

-

$0.429

$0.420

$0.420

Lucentia Tech

USA . 7,840 parts In-Stock

1+ parts

-

100+ parts

$0.429

1k+ parts

$0.420

10k+ parts

$0.420

7,840

-

$0.429

$0.420

$0.420

GreenTree Electronics

Israel . 7,722 parts In-Stock

1+ parts

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7,722

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Authorized Procurement Solutions

USA . 7,722 parts In-Stock

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7,722

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Problanco Electronics

Mexico . 5,965 parts In-Stock

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5,965

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Kulean Microsystems

USA . 4,946 parts In-Stock

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4,946

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Lixinc

USA . 4,720 parts In-Stock

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4,720

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Kepictronics

USA . 4,385 parts In-Stock

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4,385

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S.R.D Solutions

India . 4,000 parts In-Stock

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4,000

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Argo Parts USA

USA . 3,804 parts In-Stock

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3,804

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Glotronic Ltd.

UK . 3,262 parts In-Stock

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3,262

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TANS Electronics

Latvia . 2,681 parts In-Stock

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2,681

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SupplyDigital Components

Austria . 2,665 parts In-Stock

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2,665

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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A-Z Elektronik GmbH

Germany . 1,991 parts In-Stock

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1,991

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Eastek

USA . 1,650 parts In-Stock

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1,650

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Alle Elektronik GmbH

Germany . 1,327 parts In-Stock

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1,327

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UHIMA Technologies

Türkiye . 950 parts In-Stock

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950

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Overview

Unleash the power of innovation with the BUX85G by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for all your switching applications. With a maximum collector-emitter voltage of 450V and a maximum power dissipation of 40W, this NPN transistor is designed to handle even the most demanding tasks. Trust in Onsemi's reputation for excellence and choose the BUX85G for all your electronic needs. Elevate your projects with the superior value and benefits that this product brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration transistors are easy to implement and require minimal circuit design, simplifying the overall system design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current and voltage, making it ideal for high-speed operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various PCB layouts, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are suitable for applications where reliability and stability are essential.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation of 40W, this transistor can handle high power levels without overheating, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure and stable mounting options, making it suitable for rugged industrial environments.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures consistent and predictable performance in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage rating of 450V makes this transistor suitable for applications requiring high voltage switching capabilities.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them ideal for a wide range of applications in various industries.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle high current loads, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and conductivity, ensuring reliable connections for optimal performance.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection process, making it easier to integrate into circuit designs.

Case Connection: COLLECTOR

The case connection at the collector terminal provides easy access for heat dissipation, ensuring efficient thermal management for prolonged use.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX85G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX85G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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