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BUX84AS

Onsemi

BUX84AS by Onsemi

BUX84AS by Onsemi is a NPN power BJT with max. Vce of 400V and Ic of 2A. With hFE of min. 30, it's ideal for switching applications at up to 150 °C. Its flange mount package makes it suitable for high-power designs requiring a single-channel configuration.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,491 parts In-Stock

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Vyrian

USA . 2,128 parts In-Stock

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Kulean Microsystems

USA . 6,166 parts In-Stock

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SupplyDigital Components

Austria . 5,682 parts In-Stock

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TANS Electronics

Latvia . 5,392 parts In-Stock

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Problanco Electronics

Mexico . 5,138 parts In-Stock

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Corphita

USA . 1,841 parts In-Stock

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Northwest PG Solutions

USA . 904 parts In-Stock

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UHIMA Technologies

Türkiye . 707 parts In-Stock

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Native Components

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Corohmni

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Overview

Unleash the power of innovation with the BUX84AS by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 400V and a high DC current gain, this NPN transistor is designed to exceed expectations. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the BUX84AS promises reliability and efficiency. Embrace the future of technology with Onsemi's cutting-edge transistor solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and can withstand high temperatures, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatility in different electronic circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuit boards or electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, reducing the risk of damage during assembly or operation.

Maximum Collector-Emitter Voltage: 400 V

With a high voltage rating, this transistor can handle higher voltage levels, making it suitable for applications where high voltage is involved.

Maximum Collector Current (IC): 2 A

Capable of handling higher current levels, making it suitable for applications that require a higher current flow.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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