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BUX84DW

Onsemi

BUX84DW by Onsemi

BUX84DW by Onsemi is a NPN Power BJT with max. Vce of 400V, Ic of 2A, and hFE of 30. Ideal for switching applications due to its single configuration and high transition frequency of 4MHz. The transistor is housed in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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Vyrian

USA . 797 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 7,126 parts In-Stock

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TANS Electronics

Latvia . 3,579 parts In-Stock

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Problanco Electronics

Mexico . 2,868 parts In-Stock

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Corphita

USA . 1,296 parts In-Stock

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Northwest PG Solutions

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SupplyDigital Components

Austria . 1,100 parts In-Stock

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Native Components

USA . 660 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the BUX84DW by Onsemi. With its NPN configuration and maximum collector-emitter voltage of 400V, this transistor offers exceptional performance and durability. Manufactured by Onsemi, a trusted leader in semiconductor technology, you can trust that the BUX84DW will meet your needs with ease. Whether you're working on industrial control systems or power supplies, this transistor provides the value and reliability you deserve. Upgrade to the BUX84DW and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: NPN

NPN transistors are widely used and versatile, making this transistor compatible with a wide range of circuits and applications.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to integrate into circuits and reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in tasks such as turning on/off power in electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability in circuit board mounting.

No. of Terminals: 3

Simplifies the connection process with a small number of terminals, reducing error possibilities during installation.

Package Style (Meter): FLANGE MOUNT

Flange mount design enables easy and secure mounting of the transistor onto a heatsink or other components for efficient heat dissipation.

Minimum DC Current Gain (hFE): 30

Ensures reliable and consistent amplification of current in circuits, maintaining stability and performance.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for applications that require extended usage in demanding conditions.

Maximum Collector-Emitter Voltage: 400 V

Supports high voltage applications, providing a wide range of voltage handling capabilities.

Transistor Element Material: SILICON

Silicon is a common and efficient material used in transistors, offering good performance and reliability.

Maximum Collector Current (IC): 2 A

Capable of handling high currents, making it suitable for power applications that require significant current flow.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for secure connections and easy installation.

Terminal Position: SINGLE

Simplified terminal configuration for easy connection in circuits, minimizing potential errors during installation.

Case Connection: COLLECTOR

Collector connection design for efficient current flow and performance in circuit applications.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast switching speeds and response times in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84DW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84DW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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