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BUX84BV

Onsemi

BUX84BV by Onsemi

BUX84BV by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 2A, and hFE of 30. Ideal for switching applications, it operates up to 150 °C with a fT of 4MHz. Its through-hole terminals make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,120 parts In-Stock

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Digiode

USA . 2,026 parts In-Stock

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2,026

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TANS Electronics

Latvia . 6,496 parts In-Stock

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SupplyDigital Components

Austria . 5,277 parts In-Stock

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Problanco Electronics

Mexico . 2,315 parts In-Stock

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Kulean Microsystems

USA . 2,072 parts In-Stock

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Northwest PG Solutions

USA . 1,863 parts In-Stock

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Native Components

USA . 655 parts In-Stock

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655

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UHIMA Technologies

Türkiye . 496 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Corphita

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Overview

Looking for a reliable power transistor for your switching applications? Look no further than the BUX84BV by Onsemi! With a maximum collector-emitter voltage of 400V and a maximum collector current of 2A, this NPN transistor is perfect for a variety of power control needs. Onsemi's reputation for quality and innovation ensures that you are getting a top-notch product that will exceed your expectations. Trust in the BUX84BV to deliver exceptional performance and reliability, making it the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by having a single transistor in the package, making it easier to integrate into the overall system.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, preventing accidental disconnection in operation.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuits and ensures proper functionality.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy installation and secure mounting in various applications.

Minimum DC Current Gain (hFE): 30

Higher current gain ensures better amplification and performance in circuit applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltages, making it suitable for various power applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 2 A

Can handle higher current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Provides a reliable connection and solderability for easy integration into circuits or systems.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and ensures proper connection.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation, enhancing the overall performance of the transistor.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency ensures fast switching times and improved performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84BV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84BV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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