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BUX84BC

Onsemi

BUX84BC by Onsemi

BUX84BC by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 2A, and hFE of 30. Ideal for switching applications at up to 150 °C, it features a single configuration in a rectangular package with through-hole terminals. The transistor's silicon element and flange mount style make it suitable for high-power collector connections.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,220 parts In-Stock

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Digiode

USA . 951 parts In-Stock

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TANS Electronics

Latvia . 6,352 parts In-Stock

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Problanco Electronics

Mexico . 6,188 parts In-Stock

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SupplyDigital Components

Austria . 5,224 parts In-Stock

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Kulean Microsystems

USA . 1,957 parts In-Stock

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Northwest PG Solutions

USA . 1,846 parts In-Stock

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Corphita

USA . 1,084 parts In-Stock

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UHIMA Technologies

Türkiye . 860 parts In-Stock

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Native Components

USA . 779 parts In-Stock

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Corohmni

South Africa . 392 parts In-Stock

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Overview

Unlock the power of innovation with the BUX84BC by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 400 V and a minimum DC current gain of 30, this NPN transistor is designed to exceed expectations. Whether you are looking to enhance efficiency or improve reliability, the BUX84BC delivers unmatched value and benefits to customers across various industries. Trust Onsemi for quality, trust the BUX84BC for excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for a variety of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly turn on and off, making it efficient for controlling electrical circuits.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum voltage rating, this transistor can handle higher power applications and provide reliable performance under varying voltage conditions.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency allows for faster signal processing and switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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