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BUX84BS

Onsemi

BUX84BS by Onsemi

BUX84BS by Onsemi is a NPN Power BJT with max. Vce of 400V, Ic of 2A, and hFE of 30. Ideal for switching applications, it operates up to 150 °C with a fT of 4MHz. The transistor comes in a plastic/epoxy package with through-hole terminals in a rectangular shape.

Median Price

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< 1k

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Vyrian

USA . 344 parts In-Stock

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Digiode

USA . 83 parts In-Stock

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Problanco Electronics

Mexico . 8,040 parts In-Stock

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TANS Electronics

Latvia . 8,015 parts In-Stock

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Kulean Microsystems

USA . 6,276 parts In-Stock

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SupplyDigital Components

Austria . 5,418 parts In-Stock

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UHIMA Technologies

Türkiye . 727 parts In-Stock

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Native Components

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Corphita

USA . 349 parts In-Stock

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Northwest PG Solutions

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Corohmni

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Overview

Experience the exceptional quality and reliability of the BUX84BS by Onsemi, a leading manufacturer in the industry. This power bipolar junction transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 2A. With a minimum DC current gain of 30 and a nominal transition frequency of 4MHz, this NPN transistor provides superior performance and efficiency. Trust Onsemi to deliver top-notch products like the BUX84BS, designed to meet your needs and exceed your expectations. Elevate your projects with this high-quality component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in currents and voltages effectively.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections to the circuit board, ensuring stable performance under various operating conditions.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in circuits for efficient power control.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure attachment to heat sinks for effective heat dissipation, increasing the transistor's reliability.

Minimum DC Current Gain (hFE): 30

Higher DC current gain ensures efficient amplification of input signals, making this transistor suitable for various signal processing tasks.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows this transistor to handle higher voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Silicon material provides good electrical properties, allowing the transistor to operate efficiently and reliably in different circuit environments.

Maximum Collector Current (IC): 2 A

With a high maximum collector current rating, this transistor can handle higher currents, making it suitable for power switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, facilitating easy and reliable connections to the circuit board.

Terminal Position: SINGLE

Single terminal position simplifies installation and wiring, reducing the chances of errors during circuit assembly.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation, helping to maintain the transistor's temperature within safe operating limits.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency allows this transistor to switch rapidly between on and off states, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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