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BUX84AF

Onsemi

BUX84AF by Onsemi

BUX84AF by Onsemi is a NPN Power BJT with max. Vce of 400V, Ic of 2A, and hFE of 30. Ideal for switching applications, it operates up to 150 °C with a fT of 4MHz. The transistor comes in a plastic/epoxy package with through-hole terminals in flange mount style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,914 parts In-Stock

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Vyrian

USA . 881 parts In-Stock

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Problanco Electronics

Mexico . 8,377 parts In-Stock

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Kulean Microsystems

USA . 7,184 parts In-Stock

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SupplyDigital Components

Austria . 5,731 parts In-Stock

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TANS Electronics

Latvia . 2,850 parts In-Stock

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Corphita

USA . 1,894 parts In-Stock

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Native Components

USA . 733 parts In-Stock

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UHIMA Technologies

Türkiye . 616 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Northwest PG Solutions

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Overview

Discover the power and reliability of the BUX84AF by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 2A, this NPN transistor offers unmatched performance and durability. Whether you're looking to optimize your electronic projects or enhance your industrial applications, the BUX84AF delivers exceptional value and efficiency. Trust in Onsemi's reputation for excellence and elevate your designs with this cutting-edge transistor solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable package for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in a wide range of electronic circuits, offering versatility and compatibility.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to implement in different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and easy soldering, ensuring a secure connection in the circuit.

No. of Terminals: 3

The 3 terminals provide the necessary connections for the transistor to function, ensuring proper circuit operation.

Package Style (Meter): FLANGE MOUNT

The flange mount style enables easy mounting on a variety of surfaces, enhancing versatility in installation.

Minimum DC Current Gain (hFE): 30

A higher minimum DC current gain ensures stable and consistent amplification capabilities in the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures, offering reliability in various environments.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltage levels, increasing its suitability for different applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, ensuring stable performance in the transistor.

Maximum Collector Current (IC): 2 A

With a maximum collector current rating of 2 A, the transistor can handle moderate current levels, making it suitable for various circuit designs.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring a secure electrical connection in the circuit.

Terminal Position: SINGLE

A single terminal position simplifies the connection process and ensures proper orientation in the circuit layout.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies circuit design and integration, facilitating proper connection in the circuit.

Nominal Transition Frequency (fT): 4 MHz

With a nominal transition frequency of 4 MHz, the transistor can operate at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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