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BUX85AF

Onsemi

BUX85AF by Onsemi

BUX85AF by Onsemi is a NPN Power BJT with max. Vce of 450V and max. Ic of 2A. With hFE of min. 30, it's ideal for switching applications in various industries due to its high collector current capacity and silicon element material. The transistor comes in a rectangular package style with through-hole terminals for easy mounting and connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,315 parts In-Stock

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Vyrian

USA . 1,060 parts In-Stock

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SupplyDigital Components

Austria . 8,395 parts In-Stock

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Kulean Microsystems

USA . 3,922 parts In-Stock

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TANS Electronics

Latvia . 2,593 parts In-Stock

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Northwest PG Solutions

USA . 1,907 parts In-Stock

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Corphita

USA . 1,431 parts In-Stock

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UHIMA Technologies

Türkiye . 456 parts In-Stock

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456

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Corohmni

South Africa . 371 parts In-Stock

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Native Components

USA . 295 parts In-Stock

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Problanco Electronics

Mexico . 97 parts In-Stock

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Overview

Discover the power and reliability of the BUX85AF by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 450V and a collector current of 2A, this NPN transistor offers exceptional performance and durability. Manufactured by Onsemi, a trusted name in the industry, the BUX85AF provides customers with a high-quality solution for their electronic needs. Whether you're working on industrial equipment or consumer electronics, this transistor delivers the value, benefits, and advantages you need to succeed. Trust Onsemi for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring the longevity and portability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in most electronic applications, making this product versatile and compatible with a wide range of circuits.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration, making it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in turning circuits on and off.

Package Shape: RECTANGULAR

Rectangular package shape for easy mounting and fitting in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals for easy soldering onto circuit boards, providing secure connections.

No. of Terminals: 3

Optimal number of terminals for connecting the transistor in a circuit, simplifying the wiring process.

Package Style (Meter): FLANGE MOUNT

Flange mount package style for secure and stable mounting in electronic applications requiring a fixed position.

Minimum DC Current Gain (hFE): 30

High minimum DC current gain ensures reliable amplification and signal processing capabilities.

Maximum Collector-Emitter Voltage: 450 V

High maximum collector-emitter voltage rating for handling high voltage applications and ensuring device safety.

Transistor Element Material: SILICON

Silicon-based transistor element material for improved performance, reliability, and thermal properties.

Maximum Collector Current (IC): 2 A

High maximum collector current rating for handling larger loads and current levels in the circuit.

Terminal Finish: TIN LEAD

Tin lead finish on terminals for excellent solderability and conductivity, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position for easy installation and connection in circuits, reducing complexity in wiring.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation and thermal management, improving overall transistor performance.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency for fast switching speeds and frequency response, ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX85AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX85AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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