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BUX84BU

Onsemi

BUX84BU by Onsemi

BUX84BU by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 2A, and hFE of 30. Ideal for switching applications due to its single configuration and SILICON material. Operates up to 150 °C, with fT at 4MHz making it suitable for high-power tasks in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,236 parts In-Stock

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Digiode

USA . 1,644 parts In-Stock

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Kulean Microsystems

USA . 6,646 parts In-Stock

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SupplyDigital Components

Austria . 6,035 parts In-Stock

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Problanco Electronics

Mexico . 2,349 parts In-Stock

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Corphita

USA . 2,162 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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Native Components

USA . 356 parts In-Stock

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Northwest PG Solutions

USA . 266 parts In-Stock

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TANS Electronics

Latvia . 144 parts In-Stock

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UHIMA Technologies

Türkiye . 66 parts In-Stock

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Overview

Experience the superior quality and reliability of the Onsemi BUX84BU Power Bipolar Junction Transistor. Manufactured by a trusted industry leader, this NPN transistor is ideal for switching applications, offering a maximum collector-emitter voltage of 400V and a nominal transition frequency of 4 MHz. Its through-hole terminal form and flange mount package style make installation a breeze. Trust in the value and benefits that Onsemi products bring to your projects, ensuring efficiency and performance every time. Elevate your designs with the BUX84BU and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplified design with a single transistor configuration for easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in switching circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connection easy during circuit assembly.

No. of Terminals: 3

Simple 3-terminal design for easy connection and usage in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount design for secure and stable installation in circuit boards.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain ensures consistent and reliable performance during operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

High maximum voltage capability for efficient switching and voltage regulation.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 2 A

High maximum collector current for handling higher power applications.

Terminal Finish: TIN LEAD

Tin lead finish for reliable solder connections and durability.

Terminal Position: SINGLE

Single terminal position for easy connection and integration into circuits.

Case Connection: COLLECTOR

Collector connection for efficient current flow and switching operation.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency for fast switching speeds and performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84BU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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