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BUX84AU

Onsemi

BUX84AU by Onsemi

BUX84AU by Onsemi is a NPN Power BJT with max. Vce of 400V and Ic of 2A. It has hFE of min. 30 and fT of 4MHz, ideal for switching applications in electronics due to its high voltage and current capabilities. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 354 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,480 parts In-Stock

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TANS Electronics

Latvia . 7,358 parts In-Stock

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Problanco Electronics

Mexico . 5,758 parts In-Stock

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Kulean Microsystems

USA . 2,966 parts In-Stock

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Northwest PG Solutions

USA . 2,212 parts In-Stock

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Corphita

USA . 1,949 parts In-Stock

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Native Components

USA . 915 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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UHIMA Technologies

Türkiye . 20 parts In-Stock

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Overview

Discover the BUX84AU by Onsemi, a high-quality Power Bipolar Junction Transistor designed for various switching applications. With a maximum collector-emitter voltage of 400V and a collector current of 2A, this NPN transistor offers reliable performance in a compact rectangular package. Onsemi's reputation for excellence ensures that you're getting a product that meets the highest standards of quality and reliability. From industrial controls to power supplies, the BUX84AU provides the value, benefits, and advantages you need to take your projects to the next level. Trust Onsemi for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation properties, making the transistor safe to use in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in different electronic designs.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in controlling electrical signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on circuit boards, improving overall layout efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections, making it easier for manual soldering and enhancing the transistor's reliability.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and helps in quickly identifying the different functions of each terminal.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides stability and ease of installation, ensuring the transistor remains securely attached to the mounting surface.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 indicates good amplification capabilities, making it suitable for applications requiring signal amplification.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 400 V

A high maximum collector-emitter voltage of 400V allows this transistor to handle higher voltage applications with ease and reliability.

Transistor Element Material: SILICON

Silicon material in the transistor element offers high performance and reliability, ensuring consistent operation over extended periods.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle moderate power applications, making it suitable for various electronic circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and corrosion resistance, ensuring optimal performance and longevity of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it easier to integrate the transistor into electronic systems.

Case Connection: COLLECTOR

Case connection at the collector ensures efficient heat dissipation, maintaining stable operation even under high load conditions.

Nominal Transition Frequency (fT): 4 MHz

A nominal transition frequency of 4MHz indicates fast switching speeds, making this transistor ideal for applications requiring high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX84AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX84AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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