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BUX85AJ

Onsemi

BUX85AJ by Onsemi

BUX85AJ by Onsemi is a NPN Power BJT with max. Vce of 450V, Ic of 2A, and hFE of 30. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style package with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 806 parts In-Stock

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Digiode

USA . 354 parts In-Stock

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Problanco Electronics

Mexico . 5,414 parts In-Stock

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TANS Electronics

Latvia . 4,847 parts In-Stock

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SupplyDigital Components

Austria . 4,335 parts In-Stock

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Kulean Microsystems

USA . 2,764 parts In-Stock

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Northwest PG Solutions

USA . 2,224 parts In-Stock

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Corphita

USA . 987 parts In-Stock

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Native Components

USA . 789 parts In-Stock

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Corohmni

South Africa . 479 parts In-Stock

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Overview

Experience the power and reliability of the BUX85AJ by Onsemi, a top-tier manufacturer known for delivering superior quality components. As a Power Bipolar Junction Transistor designed for switching applications, this NPN transistor offers a versatile solution for a wide range of projects. Its robust construction and high collector-emitter voltage make it a dependable choice for demanding tasks. Count on the BUX85AJ to deliver exceptional performance and durability, backed by Onsemi's reputation for excellence in the industry. Elevate your projects with this high-value component that offers efficiency, precision, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

Simplified design with single configuration makes it easier to integrate into circuits and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation in such scenarios.

Minimum DC Current Gain (hFE): 30

High minimum DC current gain ensures consistent and stable amplification of signals in the circuit.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage allows for use in applications where high voltage handling capability is required.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate to high current levels, suitable for various circuit requirements.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX85AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUX85AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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