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MT9M034I12STM-DPBR

Onsemi

MT9M034I12STM-DPBR by Onsemi

MT9M034I12STM-DPBR by Onsemi is an image sensor with 1280x960 pixels, 3.75um pixel size, and a max supply voltage of 1.95V. It is ideal for applications requiring high-resolution imaging in devices such as cameras, drones, and industrial inspection systems due to its 115dB dynamic range and 60fps frame rate.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics

USA . 12,000 parts In-Stock

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Vyrian

USA . 5,881 parts In-Stock

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Chip Stock

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Digiode

USA . 2,442 parts In-Stock

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AZTECH Wire

Italy . 675 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 8,188 parts In-Stock

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Problanco Electronics

Mexico . 7,767 parts In-Stock

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TANS Electronics

Latvia . 7,237 parts In-Stock

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Kulean Microsystems

USA . 4,734 parts In-Stock

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Corphita

USA . 1,452 parts In-Stock

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Kepictronics

USA . 1,405 parts In-Stock

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UHIMA Technologies

Türkiye . 591 parts In-Stock

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Corohmni

South Africa . 362 parts In-Stock

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Overview

Discover a new level of image sensing with the MT9M034I12STM-DPBR by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors provide exceptional quality and reliability. Ideal for a wide range of applications, this CMOS image sensor offers crystal-clear images with a high dynamic range and fast frame rate. With a compact design and easy installation, this sensor is perfect for any project requiring superior image capture. Elevate your imaging experience with the MT9M034I12STM-DPBR from Onsemi.

Feature Benefit Bullets

Pixel Size (um) 3.75X3.75

The small pixel size allows for high resolution imaging and detailed pictures.

Maximum Supply Voltage 1.95 V

Ensures safe and reliable operation within specified voltage limits.

Master Clock 50 MHz

Provides precise timing for capturing images at a high frame rate.

Body Width 10 inch

Compact size makes it suitable for various applications where space is a constraint.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high sensitivity for accurate image capture.

Body Height 1.25 mm

Slim profile enables easy integration into devices without adding bulk.

Package Shape or Style SQUARE

Square shape allows for efficient layout and placement on circuit boards.

Minimum Supply Voltage 1.7 V

Works reliably even at lower voltage levels for extended battery life in portable devices.

Maximum Operating Temperature 70 °C

Can withstand high temperatures without affecting performance, suitable for various environments.

Horizontal Pixel 1280

High horizontal pixel count ensures detailed and high-resolution image capture.

Output Range -22-22mA

Wide output range provides flexibility for different applications and signal processing.

Output Type DIGITAL CURRENT

Digital current output enables easy interfacing with external devices for data processing.

Minimum Operating Temperature -30 °C

Operates effectively in low temperature conditions, suitable for use in various climates.

Maximum Operating Current 115 mA

Low operating current consumption for efficient power usage and longer device operation.

Dynamic Range 115 dB

Wide dynamic range captures both bright and dark areas accurately in the same image.

Vertical Pixel 960

High vertical pixel count ensures clear and detailed images with good depth perception.

Body Length/Diameter 10 mm

Compact body size allows for easy integration into devices with limited space.

Optical Format (inch) 1/3

1/3 inch optical format provides a good balance between compact size and image quality.

Termination Type SOLDER

Solder termination ensures secure and reliable connection during assembly.

Output Interface Type 2-WIRE INTERFACE

2-wire interface simplifies communication and data transfer to external devices.

Frame Rate 60 fps

High frame rate allows for smooth and fluid video capture with minimal motion blur.

Array Type FRAME

Frame array configuration enables simultaneous capture of multiple pixels for efficient image processing.

Mounting Feature SURFACE MOUNT

Surface mount feature facilitates easy and secure mounting on PCBs for production.

Technical Specifications

Image Sensors MT9M034I12STM-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL OUTPUT

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

115 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75X3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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