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MT9M032C12STC-DP

Onsemi

MT9M032C12STC-DP by Onsemi

MT9M032C12STC-DP by Onsemi is an image sensor with 2.20x2.20 um pixel size, 49.5 MHz master clock, and 70.1 dB dynamic range. Ideal for applications requiring high-resolution imaging such as surveillance cameras, industrial inspection systems, and medical devices due to its superior performance specifications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,129 parts In-Stock

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Digiode

USA . 125 parts In-Stock

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AZTECH Wire

Italy . 1,089 parts In-Stock

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$15.190

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Kulean Microsystems

USA . 6,865 parts In-Stock

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Problanco Electronics

Mexico . 4,672 parts In-Stock

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TANS Electronics

Latvia . 4,543 parts In-Stock

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SupplyDigital Components

Austria . 2,590 parts In-Stock

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Corphita

USA . 2,302 parts In-Stock

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UHIMA Technologies

Türkiye . 370 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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Overview

Capture crystal-clear images with the Onsemi MT9M032C12STC-DP image sensor. As a leading manufacturer in the industry, Onsemi delivers top-quality products that provide exceptional performance and reliability. This sensor is perfect for a wide range of applications, offering customers superior value and benefits. From security cameras to medical imaging devices, this sensor excels in capturing detailed visuals with precision and clarity. Trust Onsemi to deliver cutting-edge technology that meets your imaging needs effortlessly.

Feature Benefit Bullets

Pixel Size (um): 2.20X2.20

The small pixel size allows for high resolution image capturing, making this product suitable for applications requiring detailed images.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage helps in reducing power consumption and extending the battery life of devices using this image sensor.

Master Clock: 49.5 MHz

The high master clock frequency enables fast data processing and high frame rates, making this image sensor ideal for capturing moving objects or video recording.

Body Width: 11.43 inch

The compact body width allows for easy integration into space-constrained devices and systems, providing flexibility in design.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Use of CMOS technology in this image sensor results in low noise, high sensitivity, and power efficiency, making it a reliable choice for image capturing applications.

Minimum Operating Temperature: -30 °C

The wide minimum operating temperature range ensures that this image sensor can be used in harsh environmental conditions without compromising performance.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices, enhancing the usability and compatibility of this image sensor.

Frame Rate: 60 fps

The high frame rate allows for smooth and high-quality video recording or image capture, making this image sensor suitable for applications requiring fast image processing.

Technical Specifications

Image Sensors MT9M032C12STC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.60-3.10 V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

70.1 dB

Frame Rate:

60 fps

Horizontal Pixel:

1472

Housing:

CERAMIC

Master Clock:

49.5 MHz

Mounting Feature:

Maximum Operating Current:

30 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.20X2.20

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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