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MT9M031I12STC-DRBR

Onsemi

MT9M031I12STC-DRBR by Onsemi

MT9M031I12STC-DRBR by Onsemi is an image sensor with 3.75um pixel size, 50 MHz master clock, and 1/3 inch optical format. It is ideal for applications requiring a digital voltage output interface, such as surveillance cameras and industrial imaging systems.

Median Price

$27.137

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 293 parts In-Stock

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-

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$32.150

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$32.150

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$32.150

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$32.150

$32.150

$32.150

Flip Electronics (Authorized)

USA . 293 parts In-Stock

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Rochester

USA . 102 parts In-Stock

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$20.620

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$18.450

10k+ parts

$17.370

102

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$20.620

$18.450

$17.370

Verical

USA . 93 parts In-Stock

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$27.137

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$27.137

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Distributors (In-Stock)

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Digiode

USA . 612 parts In-Stock

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$21.822

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612

$21.822

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Vyrian

USA . 2,003 parts In-Stock

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2,003

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Flip Electronics

USA . 293 parts In-Stock

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293

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Distributors (Availability)

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Corphita

USA . 399 parts In-Stock

1+ parts

$20.673

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399

$20.673

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Corohmni

South Africa . 467 parts In-Stock

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$22.970

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467

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TANS Electronics

Latvia . 3,198 parts In-Stock

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SupplyDigital Components

Austria . 2,980 parts In-Stock

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2,980

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Kulean Microsystems

USA . 2,386 parts In-Stock

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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Problanco Electronics

Mexico . 679 parts In-Stock

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Overview

Capture every moment with the MT9M031I12STC-DRBR image sensor by Onsemi. Renowned for its exceptional quality and reliability, Onsemi delivers cutting-edge technology in the field of image sensors. This powerful sensor offers pixel-perfect clarity and precision, making it ideal for a wide range of applications. From security systems to automotive cameras, this sensor provides unparalleled value and performance. Elevate your projects with the MT9M031I12STC-DRBR and experience the difference that superior technology can make.

Feature Benefit Bullets

Pixel Size (um): 3.75

A small pixel size of 3.75 um allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.95 V

Operating within a maximum supply voltage of 1.95 V ensures the safety and longevity of the image sensor.

Master Clock: 50 MHz

A high master clock frequency of 50 MHz enables fast processing of image data, resulting in smoother output.

Body Width: 10 inch

With a compact body width of 10 inches, the image sensor can be easily integrated into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

The CMOS image sensor type offers low power consumption and high sensitivity, making it ideal for capturing quality images.

Package Shape or Style: SQUARE

The square package shape provides a stable and secure mounting option for the image sensor.

Minimum Supply Voltage: 1.7 V

Operating at a minimum supply voltage of 1.7 V ensures efficient power utilization and extends the battery life of devices.

Maximum Operating Temperature: 70 °C

The image sensor can operate effectively at temperatures up to 70 °C, making it suitable for a wide range of environments.

Horizontal Pixel: 1280

A high horizontal pixel count of 1280 helps in capturing wide-angle images with sharp details.

Output Type: DIGITAL VOLTAGE

The digital voltage output type ensures compatibility with modern digital systems and simplifies data processing.

Minimum Operating Temperature: -30 °C

With a minimum operating temperature of -30 °C, the image sensor can be used in cold and harsh conditions without any issues.

Maximum Operating Current: 55 mA

Operating within a maximum current of 55 mA ensures low power consumption and efficient performance of the image sensor.

Dynamic Range: 64 dB

A dynamic range of 64 dB allows the image sensor to capture both bright and dark portions of an image with good contrast.

Vertical Pixel: 960

With 960 vertical pixels, the image sensor can capture images with high resolution and clarity.

Body Length/Diameter: 10 mm

The compact body length/diameter of 10 mm makes the image sensor suitable for small-sized devices and applications.

Optical Format (inch): 1/3

The 1/3 inch optical format provides a good balance between resolution and sensitivity, making it a versatile choice for imaging applications.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection between the image sensor and other components in a system.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the integration of the image sensor with other devices, enabling quick and easy data transfer.

Frame Rate: 60 fps

With a high frame rate of 60 fps, the image sensor can capture smooth and fluid motion in videos and fast-moving scenes.

Array Type: FRAME

The frame array type allows for simultaneous capture of multiple image frames, improving overall image quality and reducing processing time.

Sensitivity (V/lx.s): 5.3 V/lx.s

A high sensitivity of 5.3 V/lx.s ensures that the image sensor can capture clear and detailed images even in low light conditions.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes it easy to install the image sensor on circuit boards or other flat surfaces, simplifying the manufacturing process.

Technical Specifications

Image Sensors MT9M031I12STC-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.38 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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