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ASX350AT3C00XPEA0-TP

Onsemi

ASX350AT3C00XPEA0-TP by Onsemi

ASX350AT3C00XPEA0-TP by Onsemi is a 3.75x3.75 um CMOS image sensor with 728H x 560V pixels, offering a dynamic range of 82.2 dB and operating temperature range from -40 to 105 °C. Ideal for applications requiring high-resolution imaging at a frame rate of 60 fps in a compact square package suitable for surface mount assembly.

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AZTECH Wire

Italy . 260 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Overview

Experience unparalleled image quality and performance with the ASX350AT3C00XPEA0-TP Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this image sensor offers exceptional value, benefits, and advantages to customers. Elevate your imaging projects with the ASX350AT3C00XPEA0-TP and witness the difference in quality and innovation.

Feature Benefit Bullets

Pixel Size (um): 3.75X3.75

Smaller pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 1.95 V

Allows for efficient power usage and helps in extending the product's longevity.

Master Clock: 27 MHz

High master clock frequency ensures smooth and fast operation of the image sensor.

Body Width: 7 inch

Compact size makes it easier to integrate the sensor into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology ensures low power consumption and high-quality image output.

Package Shape or Style: SQUARE

Square shape allows for easy placement and alignment during manufacturing.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and enhancing efficiency.

Maximum Operating Temperature: 105 °C

Wide temperature range allows the sensor to be used in various environmental conditions.

Horizontal Pixel: 728

High number of horizontal pixels results in detailed and high-resolution images.

Output Range: 29-35mA

Optimal output range for transmitting digital current signals effectively.

Output Type: DIGITAL CURRENT

Digital output ensures accuracy and compatibility with modern devices.

Minimum Operating Temperature: -40 °C

Can operate in extremely low temperatures, making it suitable for various applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish ensures long-lasting performance and reliability.

Dynamic Range: 82.2 dB

Wide dynamic range captures both bright and dark areas accurately in an image.

Vertical Pixel: 560

High number of vertical pixels enhances image resolution and quality.

Body Length/Diameter: 7 mm

Compact body size makes it suitable for small and slim devices.

Optical Format (inch): 1/5

Optical format ensures compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination provides secure and reliable connections during assembly.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface enables easy communication with other components or devices.

Frame Rate: 60 fps

High frame rate allows for smooth and high-quality video recording.

Array Type: FRAME

Frame array type facilitates capturing multiple frames quickly for various applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies the installation process and saves space in the device.

Technical Specifications

Image Sensors ASX350AT3C00XPEA0-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

7 inch

Body Height:

1.26 mm

Body Length/Diameter:

7 mm

Dynamic Range:

82.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

728

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75X3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

560

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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