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AR0330CM1C00SHAA0-DP

Onsemi

AR0330CM1C00SHAA0-DP by Onsemi

Onsemi's AR0330CM1C00SHAA0-DP image sensor features 2.2x2.2 um pixel size, 27 MHz master clock, and 1/3 inch optical format. Ideal for applications requiring high-resolution imaging with a max supply voltage of 1.9V and digital output interface at a frame rate of 60 fps.

Median Price

$15.313

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 8,601 parts In-Stock

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$16.050

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$16.050

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Flip Electronics (Authorized)

USA . 8,601 parts In-Stock

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Rochester

USA . 1,710 parts In-Stock

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$12.250

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$10.960

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$10.310

1,710

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$12.250

$10.960

$10.310

Verical

USA . 1,710 parts In-Stock

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$15.313

1k+ parts

$13.700

10k+ parts

$12.887

1,710

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$15.313

$13.700

$12.887

Distributors (In-Stock)

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Digiode

USA . 203 parts In-Stock

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$12.939

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Vyrian

USA . 2,389 parts In-Stock

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$13.620

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USA . 8,601 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,170 parts In-Stock

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$12.258

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Corohmni

South Africa . 428 parts In-Stock

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$13.620

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Perfect Parts

USA . 18,682 parts In-Stock

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SupplyDigital Components

Austria . 6,408 parts In-Stock

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Problanco Electronics

Mexico . 2,118 parts In-Stock

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Kulean Microsystems

USA . 1,772 parts In-Stock

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Northwest PG Solutions

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TANS Electronics

Latvia . 768 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 496 parts In-Stock

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Native Components

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Overview

Capture the world in stunning detail with the AR0330CM1C00SHAA0-DP image sensor by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality and reliability in all their products. This image sensor is perfect for a wide range of applications, offering crystal-clear images with a high dynamic range of 69.5 dB. With a compact size and easy mounting feature, this sensor provides exceptional value and performance for your imaging needs. Experience the difference with Onsemi's AR0330CM1C00SHAA0-DP.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Larger pixel size allows for more light to be captured, resulting in higher image quality and better low-light performance.

Maximum Supply Voltage: 1.9 V

Higher supply voltage allows for better signal-to-noise ratio and improved overall performance.

Master Clock: 27 MHz

High master clock frequency enables fast data readout and high frame rates for smooth video recording.

Body Width: 11.43 inch

Compact body width makes it easy to integrate the sensor into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption, high sensitivity, and excellent image quality, making it a popular choice in modern imaging devices.

Minimum Operating Temperature: -30 °C

Wide operating temperature range allows for reliable performance in harsh environmental conditions.

Array Type: FRAME

Frame array type provides efficient image capture and processing, suitable for high-speed applications and video recording.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation process and allows for easy integration into different electronic devices.

Technical Specifications

Image Sensors AR0330CM1C00SHAA0-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.275 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

2 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1296

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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