Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BS170G
Onsemi
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
SINGLE WITH BUILT-IN DIODE
60 V
.5 A
5 ohm
METAL-OXIDE SEMICONDUCTOR
TO-226AA
O-PBCY-T3
e1
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
N-CHANNEL
.35 W
Not Qualified
FET General Purpose Power
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
40
SWITCHING
SILICON
MMBF170LT3G
MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
TO-236AB
R-PDSO-G3
e3
-55 Cel
RECTANGULAR
SMALL OUTLINE
.225 W
FET General Purpose Powers
YES
Tin (Sn)
GULL WING
DUAL
2N7000RLRAG
2N7000RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in Enhancement Mode applications, featuring a built-in diode and 5ohm Drain-Source Resistance for efficient performance.
.2 A
5 pF
TO-92
2N7000RLRMG
2N7000RLRMG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for applications requiring Enhancement Mode operation, it features a built-in diode and 5ohm On Resistance. Package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
2N7000RLRPG
2N7000RLRPG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in applications requiring Enhancement Mode operation, such as low-power switching circuits. With a max power dissipation of 0.35W and operating temperature up to 150 °C, it offers reliable performance in various electronic designs.
NTMS4404NR2
NTMS4404NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 9.6A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.0115 ohm. This small outline transistor can handle up to 2.5W power dissipation at 150 °C max temperature.
30 V
9.6 A
7 A
.0115 ohm
300 pF
R-PDSO-G8
e0
8
235
2.5 W
TIN LEAD
NTR4502PT1
NTR4502PT1 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has GULL WING terminals and can withstand up to 150°C operating temperature.
1.95 A
.2 ohm
P-CHANNEL
.4 W
Other Transistors
Tin/Lead (Sn80Pb20)
30
NTR4502PT3
NTR4502PT3 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has a peak reflow temp of 235 °C and is surface mountable.
NTR4503NT1
NTR4503NT1 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.5A Drain Current, 0.11 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
1.5 A
.11 ohm
25 pF
.73 W
SI3457BDV-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI3457BDV-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 3.7A Drain Current, and 0.054 ohm On Resistance. Ideal for applications requiring high power dissipation up to 2W in small outline packages, such as portable electronics and power management systems.
3.7 A
.054 ohm
R-PDSO-G6
6
2 W
MATTE TIN
SI4884BDY-T1-GE3
SI4884BDY-T1-GE3 by Vishay Intertechnology is a small signal N-channel FET with a min DS breakdown voltage of 30V and max drain current of 16.5A. It is commonly used in applications requiring high power dissipation and operates at temperatures up to 150°C.
16.5 A
12.4 A
.009 ohm
4.45 W
NTJS4405NT1
NTJS4405NT1 by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage, 0.35 ohm max RDS(on), and 1A max ID. Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals. Operating in enhancement mode, it has 12pF Crss and withstands peak reflow temp of 235 °C.
25 V
1 A
.35 ohm
12 pF
NTJS4405NT4G
NTJS4405NT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE and 0.35 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has 6 terminals, operates in ENHANCEMENT MODE, and offers a max Drain Current of 1A.
TIN
NTHS4501NT1
NTHS4501NT1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.038 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features SINGLE configuration with built-in diode in a RECTANGULAR package suitable for surface mount assembly.
LOGIC LEVEL COMPATIBLE
4.9 A
.038 ohm
R-XDSO-C8
UNSPECIFIED
C BEND
NTF3055-100T3G
NTF3055-100T3G by Onsemi is a small signal FET with N-channel polarity. It features a max drain current of 3A, operating in enhancement mode for switching applications. With a package style of small outline and Gull Wing terminals, it offers a max power dissipation of 2.1W at an operating temperature of 175°C.
74 mJ
DRAIN
3 A
155 pF
TO-261AA
R-PDSO-G4
4
175 Cel
2.1 W
9 A
NTGS4111PT1
NTGS4111PT1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.06 ohm On Resistance and GULL WING terminals for surface mount assembly.
.06 ohm
.63 W
Tin/Lead (Sn/Pb)
NOT SPECIFIED
NTHS4111PT1G
NTHS4111PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.045 ohm RDS(on), and 3.3A ID. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
3.3 A
.045 ohm
R-PDSO-C8
BSS123LT3G
BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.
100 V
.17 A
6 ohm
TO-236
MGSF1N02ELT1G
MGSF1N02ELT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.085 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.
20 V
.75 A
.085 ohm
Matte Tin (Sn)
MGSF1N03LT3G
MGSF1N03LT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. It is ideal for SWITCHING applications, featuring a max Drain Current of 1.6A and 0.1 ohm Drain-Source Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
1.6 A
.1 ohm
.42 W
MMBF2202PT1G
MMBF2202PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 0.3A drain current, and 2.2 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150 °C. Package style is small outline with GULL WING terminals for surface mount assembly.
.3 A
2.2 ohm
.15 W
MMFT2955ET1G
MMFT2955ET1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.3 ohm max drain-source resistance. Operating in enhancement mode, it has a max drain current of 1.2A and can handle up to 0.8W power dissipation at 150 °C.
AVALANCHE RATED
1.2 A
.3 ohm
.8 W
NTHS5404T1G
NTHS5404T1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 5.2A ID, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This RECTANGULAR package has 8 terminals and built-in DIODE, making it suitable for high-power circuits.
5.2 A
.03 ohm
.7 W
NTHS5441T1G
NTHS5441T1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 3.9A Drain Current, and 0.06 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
3.9 A
1.3 W
NTR4502PT3G
NTR4502PT3G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 1.95A and 0.2 ohm RDS(on), operating in enhancement mode at up to 150 °C. This small outline transistor with GULL WING terminals is designed for surface mount configurations.
BS107AG
BS107AG by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.25A Drain Current, and 6.4 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE. Package style is CYLINDRICAL with THROUGH-HOLE terminals.
200 V
.25 A
6.4 ohm
BS107ARL1G
BS107ARL1G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage. It's used for SWITCHING applications, operating in ENHANCEMENT MODE with 0.25A Drain Current. The transistor has a Max Power Dissipation of 0.35W and Max Operating Temperature of 150°C.
NTA4151PT1
NTA4151PT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.54A Drain Current, and 0.36 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals. The transistor operates at up to 150 °C and has a max power dissipation of 0.15W in a SMALL OUTLINE package.
.54 A
.76 A
.36 ohm
NTR0202PLT3G
NTR0202PLT3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.
.4 A
.8 ohm
NTR4503NT3G
NTR4503NT3G by Onsemi is a small signal FET with N-channel polarity and single configuration. It has a min DS breakdown voltage of 30V, max drain current of 2A, and max power dissipation of 0.73W. Ideal for switching applications, this MOSFET operates in enhancement mode with a max operating temperature of 150 °C.
2 A
MMFT960T1G
MMFT960T1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and power dissipation of 0.8W, it offers reliable performance in small outline packages at temperatures up to 150 °C.
1.7 ohm
VN2222LLRLRAG
VN2222LLRLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.15A Drain Current, 7.5 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 0.4W and peak reflow temperature of 260 °C, it offers reliable performance in various electronic circuits.
.15 A
7.5 ohm
TIN SILVER COPPER
DMN100-7-F
Diodes Incorporated
DMN100-7-F by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 1.1A max drain current, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.5W and peak reflow temp of 260°C, it's suitable for small outline packages in high-temp environments.
HIGH RELIABILITY
1.1 A
.24 ohm
.5 W
SI4401DY-T1-GE3
SI4401DY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A Drain Current, and 0.0155 ohm On Resistance. Ideal for applications requiring high power dissipation in small outline packages like power management systems and voltage regulators.
40 V
8.7 A
.0155 ohm
3 W
CSD25301W1015
Texas Instruments
CSD25301W1015 by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package, suitable for surface mount assembly at temperatures up to 150°C.
2.2 A
.22 ohm
40 pF
R-PBGA-B6
GRID ARRAY
1.5 W
BALL
IRF3000PBF
International Rectifier
IRF3000PBF by International Rectifier is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.6A Drain Current, 0.4 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is designed for ENHANCEMENT MODE operation.
300 V
.0016 A
.4 ohm
MS-012AA
NTJS3157NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 6; Terminal Form: GULL WING;
3.2 A
1 W
NTJS3157NT4
NTJS3157NT4 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1W and can withstand temperatures up to 150 °C.
NTMFS4708NT1G
NTMFS4708NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.8A ID, and 0.01 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style.
7.8 A
.01 ohm
R-PDSO-F5
5
FLAT
NDS0610_NL
Fairchild Semiconductor
NDS0610_NL by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
.12 A
10 ohm
.36 W
2N6660-E3
2N6660-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.99A Drain Current, and 6.25W Power Dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and built-in DIODE configuration.
LOW THRESHOLD
.99 A
3 ohm
10 pF
TO-205AD
O-MBCY-W3
METAL
6.25 W
WIRE
AMPLIFIER
2N6661-E3
Vishay Intertechnology's 2N6661-E3 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operating temperature range from -55°C to 150°C makes it versatile for various electronic designs.
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
90 V
.86 A
4 ohm
e4
SILVER
SI2305DS-T1-E3
SI2305DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 12A IDM, and 0.052 ohm RDS(ON). Ideal for small outline applications requiring high drain current and low on-resistance in enhancement mode operation.
8 V
3.5 A
.052 ohm
12 A
SI4401DY-T1-E3
SI4401DY-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A ID, and 0.0155 ohm RDS(ON). Ideal for applications requiring high drain current capability in compact designs.
TP0610KL-TR1-E3
TP0610KL-TR1-E3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 0.27A and a max drain-source on resistance of 6 ohm.
ESD PROTECTION
.27 A
NTJS3157NT2G
NTJS3157NT2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 3.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150°C, this MOSFET has 0.06 ohm On Resistance and Matte Tin Terminal Finish.
NTJS3157NT2
NTJS3157NT2 by Onsemi is a small signal N-channel FET with a min DS breakdown voltage of 20V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 3.2A.
IRF7807VD2PBF
IRF7807VD2PBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.025 ohm On Resistance and can handle up to 2.5W power dissipation at 150°C max temperature.
8.3 A
.025 ohm
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