Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
RK7002T116
ROHM
ROHM RK7002T116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. The transistor has a max power dissipation of 0.225W and can withstand temperatures up to 150°C.
SINGLE WITH BUILT-IN DIODE
60 V
.115 A
7.5 ohm
METAL-OXIDE SEMICONDUCTOR
5 pF
R-PDSO-G3
e1
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
.225 W
Not Qualified
FET General Purpose Power
YES
TIN SILVER COPPER
GULL WING
DUAL
SWITCHING
SILICON
FDV302PD87Z
Fairchild Semiconductor
Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
LOGIC LEVEL COMPATIBLE
25 V
.12 A
10 ohm
P-CHANNEL
.35 W
Other Transistors
FDV301ND87Z
FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.
.22 A
4 ohm
NTMFS4825NFET1G
Onsemi
NTMFS4825NFET1G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 17A max drain current, and 0.002 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Features small outline package style and operates in enhancement mode up to 150 °C.
DRAIN
30 V
17 A
.002 ohm
R-PDSO-F5
e3
5
TIN
FLAT
2N7002LT1H
2N7002LT1H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 7.5 ohm RDS(ON). It operates in Enhancement Mode, suitable for small outline applications like power management circuits due to its 115mA ID and built-in diode.
TO-236
-55 Cel
260
MATTE TIN
30
SI2392ADS-T1-GE3
Vishay Intertechnology
SI2392ADS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 3.1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.126 ohm max on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
100 V
3.1 A
.126 ohm
14 pF
TO-236AB
2.5 W
Matte Tin (Sn)
CPH3362-TL-W
CPH3362-TL-W by Onsemi is a P-CHANNEL FET with 100V DS breakdown voltage and 0.7A max drain current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1W. Suitable for surface mount designs in various electronic circuits.
.7 A
1.7 ohm
7.3 pF
e6
1 W
TIN BISMUTH
DMG3418L-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
HIGH RELIABILITY
4 A
.06 ohm
AEC-Q101
CPH3462-TL-W
CPH3462-TL-W by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 1A max drain current, and 0.785 ohm RDS(on). Ideal for small outline applications requiring high power dissipation up to 1W at 150°C. Suitable for surface mount designs due to its gull wing terminals and built-in diode configuration.
1 A
.785 ohm
TSM126CXRFG
Taiwan Semiconductor
TSM126CXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 800 ohm max RDS(on), and 0.03A max ID. This SMALL OUTLINE transistor operates in DEPLETION MODE and has GULL WING terminals for surface mount assembly.
600 V
.03 A
800 ohm
DEPLETION MODE
FDR6580
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
20 V
11 A
11.2 A
.009 ohm
R-PDSO-G8
8
1.8 W
FDR6674A
FDR6674A by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.008 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.8W and can withstand temperatures up to 150°C.
11.5 A
.008 ohm
FDC5614PD87Z
FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.
3 A
.1 ohm
R-PDSO-G6
6
1.6 W
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
.46 A
1.1 ohm
NTMFS4943NT1G
NTMFS4943NT1G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 125A IDM. Ideal for SWITCHING applications, it features a 0.011 ohm Drain-Source On Resistance and operates up to 150 °C.
31 mJ
8.3 A
.011 ohm
R-XDSO-F5
UNSPECIFIED
NOT SPECIFIED
125 A
Tin (Sn)
STS4DPFS30L
STMicroelectronics
STS4DPFS30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max operating temperature of 150 °C.
.095 ohm
e4
NICKEL PALLADIUM GOLD
NTGS3443T1
NTGS3443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 2.2A Drain Current, and 0.065 ohm On Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150 °C.
2.2 A
.065 ohm
e0
235
.5 W
Tin/Lead (Sn80Pb20)
NTGS3441T1
NTGS3441T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 1.65A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating in ENHANCEMENT MODE, it has 0.09 ohm On Resistance and can handle up to 0.5W Power Dissipation at 150 °C.
1.65 A
.09 ohm
TIN LEAD
NTGS3446T1
NTGS3446T1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 5.8A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
5.8 A
2.5 A
.045 ohm
100 pF
240
NTMS10P02R2
NTMS10P02R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 4.5A Drain Current, and 0.014 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET is ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
4.5 A
8.8 A
.014 ohm
1010 pF
.4 W
DMN1032UCB4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: S-PBGA-B4;
12 V
.038 ohm
47 pF
S-PBGA-B4
4
SQUARE
GRID ARRAY
BALL
BOTTOM
CPH3461-TL-H
CPH3461-TL-H by Onsemi is a N-CHANNEL FET with 250V DS breakdown voltage, 0.35A drain current, and 7.2 ohm on resistance. It is used for switching applications in enhancement mode with built-in diode, operating at up to 150 °C. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
250 V
.35 A
7.2 ohm
DMN53D0U-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn);
50 V
.3 A
3 ohm
STN3PF06
STN3PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 2.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150 °C.
AVALANCHE ENERGY RATED
.22 ohm
R-PDSO-G4
NDDP010N25AZ-1H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Case Connection: DRAIN; Package Shape: RECTANGULAR;
10 A
.42 ohm
TO-251
R-PSIP-T3
IN-LINE
52 W
NO
THROUGH-HOLE
SINGLE
NDDP010N25AZT4H
NDDP010N25AZT4H by Onsemi is a N-CHANNEL FET with 250V DS Breakdown Voltage, 10A Drain Current, and 0.42 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
TO-252
R-PSSO-G2
2
PCP1302-TD-H
PCP1302-TD-H by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, 3A ID, and 0.266 ohm RDS. It's used in enhancement mode applications with a max power dissipation of 3.5W at 150°C, featuring a small outline package style for surface mount assembly.
.266 ohm
TO-243AA
R-PSSO-F3
3.5 W
NTGS1135PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
ULTRA LOW RESISTANCE
8 V
4.6 A
.031 ohm
DMN26D0UFB4-7
DMN26D0UFB4-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.35W. This chip carrier package features a silicon transistor element and can withstand temperatures up to 150°C.
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
.23 A
.24 A
R-PBCC-N3
CHIP CARRIER
NO LEAD
STP60NH2LL
STP60NH2LL by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it has 0.0135 ohm On Resistance and operates at up to 150 °C.
LOW THRESHOLD
24 V
40 A
.0135 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
245
60 W
40
DMN5L06WK-7
DMN5L06WK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.3A drain current, and 3ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, it meets AEC-Q101 standards for automotive use.
HIGH RELIABILITY, FAST SWITCHING
.25 W
FET General Purpose Powers
DMN2112SN-7
DMN2112SN-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1.2A max drain current, ideal for switching applications. It operates in enhancement mode, with 0.5W max power dissipation and -55 to 150°C operating temperature range. The package style is small outline, making it suitable for surface mount designs.
1.2 A
45 pF
MIL-STD-202
DMN2114SN-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
.16 ohm
NMSD200B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 30;
.2 A
2 ohm
.2 W
NTMS4935NR2G
NTMS4935NR2G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 10A ID, and 0.0051 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating at max temp of 150 °C, it features built-in diode and METAL-OXIDE SEMICONDUCTOR technology.
.0051 ohm
BSS209PWL6327
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; No. of Elements: 1; Package Shape: RECTANGULAR;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.58 A
.55 ohm
.52 W
BSV236SPL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .56 W; Qualification: Not Qualified; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED;
1.5 A
.175 ohm
.56 W
BSS223PWL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Maximum Drain-Source On Resistance: 1.2 ohm;
.39 A
1.2 ohm
22 pF
NTTFS4932NTWG
NTTFS4932NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 79A Drain Current, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, 0.0055 ohm On Resistance, and operates in ENHANCEMENT MODE. This MOSFET has a max power dissipation of 43W and can withstand temperatures up to 150 °C.
79 A
.0055 ohm
S-XDSO-N5
43 W
NTTFS4937NTAG
NTTFS4937NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A ID, and 0.007 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package with NO LEAD terminals features a BUILT-IN DIODE and DUAL terminal position.
75 A
.007 ohm
43.1 W
Matte Tin (Sn) - annealed
NTTFS4937NTWG
NTTFS4937NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.007 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package features a BUILT-IN DIODE and NO LEAD terminals for surface mount assembly.
NTTFS4939NTWG
NTTFS4939NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 52A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 29.8W. This surface mount transistor has a SQUARE package shape and operates at up to 150 °C temperature.
52 A
8.9 A
29.8 W
NTTFS4943NTWG
NTTFS4943NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 8A ID, and 0.011 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor features METAL-OXIDE SEMICONDUCTOR tech and SILICON material.
8 A
NTTFS4945NTWG
NTTFS4945NTWG by Onsemi is a N-CHANNEL FET with built-in diode for switching applications. It features a 30V DS breakdown voltage, 7.1A max drain current, and 0.013 ohm max on resistance. This MOSFET has a square package shape, no lead terminals, and operates in enhancement mode.
7.1 A
.013 ohm
SSM3K121TU
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
3.2 A
.14 ohm
R-PDSO-F3
.8 W
IRFM210BTF_FP001
Fairchild Semiconductor's IRFM210BTF_FP001 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for SWITCHING applications. It features 0.77A max drain current, 1.5 ohm max on resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 2W power dissipation at 150°C.
200 V
.77 A
1.5 ohm
9 pF
2 W
NTLJS4149PTAG
NTLJS4149PTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.5A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
2.7 A
.062 ohm
S-PDSO-N6
3.2 W
NTLJS4149PTBG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;
© 2023 All rights reserved
