Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2N7002K,215
NXP Semiconductors
2N7002K,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It operates in enhancement mode for switching applications. With a max drain current of 0.34A and breakdown voltage of 60V, it's ideal for high-power circuits in various electronic devices.
LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE
60 V
.34 A
3.9 ohm
METAL-OXIDE SEMICONDUCTOR
10 pF
TO-236AB
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
-65 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.83 W
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
DUAL
30
SWITCHING
SILICON
2N7002T,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .3 A; JEDEC-95 Code: TO-236AB;
.3 A
5 ohm
PHK24NQ04LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MS-012; JESD-30 Code: R-PDSO-G8; No. of Terminals: 8;
40 V
21.2 A
.0077 ohm
MS-012
R-PDSO-G8
8
PHK28NQ03LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Terminal Position: DUAL; Qualification: Not Qualified;
30 V
23.7 A
.0065 ohm
e4
2
6.25 W
Nickel/Palladium/Gold (Ni/Pd/Au)
PHK4NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
200 V
4 A
.13 ohm
FET General Purpose Powers
PMR280UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;
20 V
.98 A
.34 ohm
.53 W
PMR400UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
.8 A
.48 ohm
PMV31XN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G3;
5.9 A
.037 ohm
2 W
PMV45EN,215
PMV45EN,215 by NXP Semiconductors is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.4A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W and can withstand temperatures up to 150°C.
5.4 A
.042 ohm
IEC-60134
2N7002ET3G
Onsemi
2N7002ET3G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with built-in diode, GULL WING terminals, and 150°C max temp.
.26 A
2.5 ohm
.3 W
2N7002KT3G
2N7002KT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.32A Drain Current and 1.6ohm On Resistance. Operating at 150 °C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
.32 A
1.6 ohm
PHT4NQ10LT,135
NXP Semiconductors PHT4NQ10LT,135 is a N-CHANNEL FET with 100V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.25 ohm max on resistance, and operates in enhancement mode at up to 150°C.
DRAIN
100 V
3.5 A
.25 ohm
R-PDSO-G4
4
6.9 W
BSS119E6433
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
.17 A
6 ohm
4.1 pF
-55 Cel
.36 W
NTHD3133PFT1G
NTHD3133PFT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.08 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
3.2 A
.08 ohm
R-XDSO-C8
UNSPECIFIED
P-CHANNEL
2.1 W
Other Transistors
C BEND
NTHD3133PFT3G
NTHD3133PFT3G by Onsemi is a P-CHANNEL FET for switching applications. Features include 20V DS breakdown voltage, 3.2A max drain current, and 0.08 ohm max on resistance. Ideal for enhancement mode operation in small outline packages with tin finish terminals.
DMN3115UDM-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOW THRESHOLD
3.22 A
.06 ohm
R-PDSO-G6
6
.9 W
MATTE TIN
DMN2170U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
2.3 A
.07 ohm
34 pF
.6 W
DMN2230U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;
2 A
.11 ohm
30 pF
Matte Tin (Sn)
NTHS4166NT1G
NTHS4166NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 8.2A max drain current, and 0.022 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a built-in diode, small outline package style, and can withstand up to 150°C operating temperature.
8.2 A
4.9 A
.022 ohm
R-PDSO-C8
2.2 W
NUS3116MTR2G
NUS3116MTR2G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5.47A Drain Current, and 0.05 ohm On Resistance. With ENHANCEMENT MODE operation and 150 °C max temp, it's ideal for high-power switching circuits in compact designs.
12 V
5.47 A
4.4 A
.05 ohm
S-XBCC-N8
SQUARE
CHIP CARRIER
1.7 W
NO LEAD
BOTTOM
DMP57D5UFB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .425 W; Maximum Drain-Source On Resistance: 6 ohm; Moisture Sensitivity Level (MSL): 1;
50 V
.2 A
R-PBCC-N3
.425 W
NICKEL PALLADIUM GOLD
NTF2955PT1G
NTF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 1.7A max drain current, and 0.185 ohm max on resistance. This enhancement mode transistor comes in a small outline package with gull wing terminals for surface mount assembly.
1.7 A
.185 ohm
TO-261AA
SI2303BDS-T1-GE3
Vishay Intertechnology
SI2303BDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V DS breakdown voltage and 1.49A max drain current. Ideal for enhancement mode operation in applications requiring small outline, surface mount transistors with built-in diode, such as power management circuits.
1.49 A
.2 ohm
TO-236
SI3433BDV-T1-GE3
SI3433BDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 4.3A Drain Current, and 0.042ohm On Resistance. Ideal for small signal applications in electronics due to its SINGLE configuration with built-in diode and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, suitable for surface mount designs in various electronic devices.
4.3 A
PURE MATTE TIN
DMP2225L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
2.6 A
1.08 W
IRF7478QTRPBF
International Rectifier
IRF7478QTRPBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max ID of 7A and 0.026 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. Suitable for surface mount with GULL WING terminals, this transistor offers high performance in a SMALL OUTLINE package.
7 A
.026 ohm
37 pF
MS-012AA
2.5 W
SQ2361EES-T1-GE3
The Vishay Intertechnology SQ2361EES-T1-GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 2.5A max drain current. Ideal for small signal applications, it features a built-in diode, 0.15 ohm max on resistance, and operates in enhancement mode at up to 175°C.
2.5 A
.15 ohm
50 pF
175 Cel
40
BSS816NWL6327
BSS816NWL6327 by Infineon Technologies is a N-CHANNEL FET with 20V DS Breakdown Voltage and 1.4A Drain Current. Ideal for small outline applications, it operates in enhancement mode with 0.16 ohm On Resistance, making it suitable for various electronic devices requiring high performance in compact designs.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
1.4 A
.16 ohm
.5 W
BSS214NWL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
1.5 A
.14 ohm
DMN66D0LW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Minimum DS Breakdown Voltage: 60 V;
.115 A
.2 W
DMN4010LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; No. of Terminals: 5; Operating Mode: ENHANCEMENT MODE;
11.5 A
.012 ohm
S-PDSO-N5
5
2.45 W
AEC-Q101
2N6661JTXL02
Vishay Intertechnology's 2N6661JTXL02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A ID, and 4Ω RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package style is CYLINDRICAL with METAL-OXIDE SEMICONDUCTOR technology, suitable for high power dissipation up to 6.25W at 150°C.
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
90 V
.86 A
4 ohm
TO-205AD
O-MBCY-W3
METAL
ROUND
CYLINDRICAL
NOT SPECIFIED
NO
WIRE
2N7000,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
TO-92
O-PBCY-T3
THROUGH-HOLE
2N7002E,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-236AB; Additional Features: LOGIC LEVEL COMPATIBLE;
.385 A
3 ohm
2N7002F,215
2N7002F,215 by NXP Semiconductors is a N-CHANNEL FET with a 60V DS breakdown voltage and 0.475A drain current. It is used for switching applications in enhancement mode, featuring a built-in diode and 10pF feedback capacitance. Operating temperature ranges from -65 to 150 °C.
.475 A
2 ohm
BS108,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CYLINDRICAL;
.25 A
15 pF
.35 W
BSN254,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; JESD-609 Code: e3; Maximum Drain Current (ID): .3 A;
250 V
7 ohm
BSN254A,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
1 W
BSN304,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Package Style (Meter): CYLINDRICAL; JESD-609 Code: e3;
300 V
8 ohm
BSP254A,126
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Terminal Position: BOTTOM;
15 ohm
NOT APPLICABLE
BSP304A,126
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): .17 A; Minimum DS Breakdown Voltage: 300 V;
17 ohm
BSS83,215
NXP Semiconductors' BSS83,215 is a N-CHANNEL FET with 10V DS Breakdown Voltage and 0.05A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 0.23W at 125°C.
SUBSTRATE
10 V
.05 A
120 ohm
125 Cel
.23 W
BST72A,112
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM;
.19 A
10 ohm
PHT2NQ10T,135
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Case Connection: DRAIN; Terminal Position: DUAL;
.43 ohm
PMBF4391,215
NXP Semiconductors' PMBF4391,215 is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.012A and small outline package style, it offers fast turn on/off times of 80ns/20ns.
.012 A
30 ohm
JUNCTION
3.5 pF
R-PDSO-F3
DEPLETION MODE
.25 W
Tin (Sn)
20 ns
80 ns
SI4420DY,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; Terminal Position: DUAL;
.0125 A
.009 ohm
SI9410DY,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;
.007 A
.03 ohm
AO3401
Alpha & Omega Semiconductor
AO3401 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 4A ID, 0.05 ohm RDS(on). This ENHANCEMENT MODE transistor has GULL WING terminals in a SMALL OUTLINE package.
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