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SINGLE WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 581

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSS84WT106 by ROHM

BSS84WT106

ROHM

ROHM BSS84WT106 is a P-CHANNEL FET with 60V DS breakdown voltage and 0.21A ID. Ideal for switching applications, it features a built-in diode, 6.4 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, it has a max power dissipation of 0.3W and can withstand temperatures from -55 to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.21 A

6.4 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.3 W

YES

GULL WING

DUAL

SWITCHING

SILICON

DMN1032UCP4-7 by Diodes Incorporated

DMN1032UCP4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.01 W; Maximum Drain-Source On Resistance: .042 ohm; Maximum Pulsed Drain Current (IDM): 15 A;

SINGLE WITH BUILT-IN DIODE

12 V

4.8 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

31 pF

S-XBCC-N4

e2

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

1.01 W

15 A

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON

DMP31D1UQ-7 by Diodes Incorporated

DMP31D1UQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Maximum Feedback Capacitance (Crss): 5.8 pF; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

30 V

.62 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

5.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.58 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP31D1UQ-13 by Diodes Incorporated

DMP31D1UQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

30 V

.62 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

5.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.58 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON

JFE150DBVT by Texas Instruments

JFE150DBVT

Texas Instruments

JFE150DBVT by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for amplifier applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in DEPLETION MODE, this transistor has a max temperature of 125°C and feedback capacitance of 7pF.

SINGLE WITH BUILT-IN DIODE

40 V

JUNCTION

7 pF

R-PDSO-G5

1

5

DEPLETION MODE

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

AMPLIFIER

SILICON