Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTMFS4119NT3G
Onsemi
NTMFS4119NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 18A Drain Current, and 0.0035 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150 °C max operating temp.
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
18 A
11 A
.0035 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
6.1 W
Not Qualified
FET General Purpose Power
YES
Tin (Sn)
FLAT
DUAL
40
SWITCHING
SILICON
NTS2101PT1
NTS2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage and 3.7A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.96W. This small outline transistor has a 0.1 ohm on resistance and can withstand temperatures up to 150 °C.
8 V
3.7 A
1.4 A
.1 ohm
R-PDSO-G3
e0
3
235
P-CHANNEL
.96 W
Other Transistors
Tin/Lead (Sn80Pb20)
GULL WING
NOT SPECIFIED
BS170RLRAG
BS170RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
60 V
.5 A
5 ohm
TO-226AA
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.35 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
NTTD4401FR2G
NTTD4401FR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A, 0.09 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150 °C operating temperature.
LOGIC LEVEL COMPATIBLE
20 V
2.4 A
.09 ohm
175 pF
R-PDSO-G8
8
1.42 W
TIN
30
TP0202K-T1-E3
Vishay Intertechnology
Vishay Intertechnology's TP0202K-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.385A Drain Current, and 1.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals and ENHANCEMENT MODE operation up to 150°C.
.385 A
1.4 ohm
TO-236AB
MATTE TIN
NTMFS4121NT1G
NTMFS4121NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 17A Drain Current, and 0.00525 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY, Surface Mountable, Operating in ENHANCEMENT MODE.
17 A
.00525 ohm
6.6 W
NTMFS4701NT1G
NTMFS4701NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.7A ID, and 0.008 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and operates in DUAL terminal position.
7.7 A
.008 ohm
NTMFS4707NT3G
NTMFS4707NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A ID, and 0.013 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates in SURFACE MOUNT package style.
6.9 A
.013 ohm
NTMS4706NR2
NTMS4706NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 6.4A ID, and 0.012 ohm RDS(on). It is used for switching applications in enhancement mode with built-in diode. This small outline transistor has GULL WING terminals and operates in surface mount configuration.
6.4 A
.012 ohm
TIN LEAD
NTR2101PT1
NTR2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.7A ID, and 0.052 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals, operates up to 150 °C, and has a power dissipation of 0.96W.
.052 ohm
NTR1P02T3G
NTR1P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
1 A
.18 ohm
.4 W
Matte Tin (Sn)
NTTS2P03R2G
NTTS2P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology. With a max temp of 150 °C, it has a small outline package style for efficient performance.
2.1 A
.085 ohm
S-PDSO-G8
SQUARE
1.78 W
BSS225
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
600 V
.09 A
45 ohm
4.4 pF
R-PSSO-F3
SINGLE
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.17 A
8 ohm
3 pF
.36 W
BS108ZL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
200 V
.25 A
10 pF
TO-92
TIN SILVER COPPER
BS170RL1G
BS170RL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
EUROPEAN PART NUMBER
BS170RLRMG
BS170RLRMG by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
BS170ZL1G
BS170ZL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
NTMS3P03R2G
NTMS3P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.86A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a peak reflow temp of 260 °C and small outline package style, it offers high performance in various electronic devices.
AVALANCHE RATED
3.86 A
2.34 A
135 pF
.73 W
NTMS4503NR2G
NTMS4503NR2G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 9A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150 °C, it features a built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology.
28 V
9 A
2.5 W
NTMS4700NR2G
NTMS4700NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.6A ID. Ideal for SWITCHING applications, it features 0.01 ohm RDS(on) and operates in ENHANCEMENT MODE. This GULL WING package has 8 terminals and can withstand peak reflow at 260 °C.
8.6 A
.01 ohm
NTMS4N01R2G
NTMS4N01R2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.9A, 0.04ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers high performance in small outline packages.
5.9 A
3.3 A
.04 ohm
100 pF
.77 W
NTMSD3P102R2G
NTMSD3P102R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.34A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.085 ohm On Resistance and 135pF Feedback Capacitance.
2 W
NTMSD3P303R2G
NTMSD3P303R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and a RECTANGULAR package shape, it offers high performance in small outline designs at up to 150 °C operating temperature.
VN2410LZL1G
VN2410LZL1G by Onsemi is a N-CHANNEL FET with 240V DS breakdown voltage, 0.2A drain current, and 10 ohm on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
240 V
.2 A
10 ohm
20 pF
IPB80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
55 V
80 A
.0065 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
245
135 W
IPI80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Minimum DS Breakdown Voltage: 55 V; Package Style (Meter): IN-LINE;
.0068 ohm
TO-262AA
R-PSIP-T3
IN-LINE
IPP80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0068 ohm;
TO-220AB
R-PSFM-T3
FLANGE MOUNT
NTS4101PT1
NTS4101PT1 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 1.37A max drain current, and 0.12 ohm max on-resistance. With a small outline package and GULL WING terminals, it operates in enhancement mode up to 150 °C.
1.37 A
.12 ohm
85 pF
.329 W
NTZS3151PT5G
NTZS3151PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 0.86A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, this MOSFET has 0.15 ohm Drain-Source On Resistance for efficient performance.
.86 A
.15 ohm
R-PDSO-F6
6
NTMS4107NR2G
NTMS4107NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 15A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0045 ohm.
15 A
.0045 ohm
SI2303BDS-T1-E3
Vishay Intertechnology's SI2303BDS-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.49A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 0.2 ohm On Resistance, making it suitable for high temperature environments up to 150°C.
1.49 A
.2 ohm
TO-236
.9 W
BSS192PE6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
250 V
.19 A
12 ohm
8 pF
-55 Cel
255
1 W
AEC-Q101
DMN5L06-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
50 V
.28 A
3 ohm
5 pF
DMN5L06T-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
LOW CAPACITANCE
.15 W
DMN5L06W-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
.2 W
RSF010P03TL
ROHM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .35 ohm;
.35 ohm
R-PDSO-F3
e2
.8 W
TIN COPPER
10
RTF015N03TL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
1.5 A
.34 ohm
SI4884BDY-T1-E3
SI4884BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 30V DS Breakdown Voltage, 16.5A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has a max power dissipation of 4.45W and operates up to 150°C temperature.
16.5 A
12.4 A
.009 ohm
4.45 W
FET General Purpose Powers
NTJS4160NT1G
NTJS4160NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1.8A and 0.06 ohm RDS(ON), in a small outline package with GULL WING terminals for surface mount assembly.
1.8 A
.06 ohm
R-PDSO-G6
NTMS4705NR2G
NTMS4705NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 10A Drain Current, and 0.01 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates up to 150 °C.
10 A
7.4 A
1.52 W
NTMS4706NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
NTGS3441PT1G
NTGS3441PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 1.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.11 ohm on resistance, and operates in enhancement mode. This small outline transistor has 6 terminals and GULL WING form factor for surface mount assembly.
.11 ohm
NTMSD3P102R2SG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
BSS127E6327
Infineon's BSS127E6327 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 600 ohm max on resistance. Ideal for small signal applications, it features a built-in diode and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C operating temperature.
.021 A
600 ohm
1.5 pF
.5 W
BSS139E6906
Infineon's BSS139E6906 is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30 ohm RDS(on). Ideal for small signal applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in DEPLETION MODE, this transistor has a max temp of 150°C and 3.3pF Crss.
.1 A
30 ohm
3.3 pF
DEPLETION MODE
NTVS3141PT2G
NTVS3141PT2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.7A and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR GRID ARRAY package has 6 terminals with BALL form, suitable for surface mount designs.
2.9 A
R-PBGA-B6
GRID ARRAY
1.5 W
BALL
DMN4027SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Terminal Position: DUAL; Terminal Finish: MATTE TIN;
HIGH RELIABILITY
40 V
8 A
6 A
.027 ohm
2.8 W
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