Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
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NTE378
Nte Electronics
NTE378 by Nte Electronics is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications due to its high hFE of 40 and fT of 40MHz. The package style is flange mount with through-hole terminals.
COLLECTOR
10 A
80 V
SINGLE
40
TO-220AB
R-PSFM-T3
1
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
PNP
50 W
Not Qualified
Other Transistors
NO
THROUGH-HOLE
SWITCHING
SILICON
40 MHz
ST1802HI
STMicroelectronics
ST1802HI by STMicroelectronics is a NPN BJT transistor with 600V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications due to its single configuration and isolated case connection in a rectangular package.
ISOLATED
600 V
4
e0
150 Cel
NPN
TIN LEAD
MD1802FX
MD1802FX by STMicroelectronics is a NPN BJT transistor with 700V VCEO, 10A IC, and 57W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability in a rectangular package. Operates up to 150 °C with isolated case connection for reliable performance.
700 V
5.5
e3
57 W
MATTE TIN
2STW1695
2STW1695 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 100 W, operates up to 150 °C, and supports collector-emitter voltages of 140 V. Ideal for high-performance electronic circuits.
140 V
50
TO-247
100 W
TIN
20 MHz
2STW4468
2STW4468 by STMicroelectronics is an NPN BJT designed for amplifier applications. It features a max power dissipation of 100 W, a collector-emitter voltage of 140 V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
TO-247AA
AMPLIFIER
MD2009DFP
MD2009DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
5
40 W
UL RECOGNIZED
2STA1695
2STA1695 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 100W, collector-emitter voltage of 140V, and operates up to 150 °C. Its through-hole design ensures easy integration into various electronic circuits.
260
30
2STC4468
2STC4468 by STMicroelectronics is a NPN BJT transistor with 140V VCE, 10A IC, and 100W power dissipation. Ideal for amplifier applications due to its 20MHz fT, 50 hFE, and -55 to +150°C operating range. Packaged in plastic/epoxy with through-hole terminals for easy mounting.
MD1803DFP
MD1803DFP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
BUB323ZT4
Onsemi
BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.
350 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
500
R-PSSO-G2
2
175 Cel
SMALL OUTLINE
235
150 W
YES
Tin/Lead (Sn/Pb)
GULL WING
2 MHz
BUB323Z
BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.
-65 Cel
ST1802FH
ST1802FH by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
TIP142TU
Fairchild Semiconductor
TIP142TU by Fairchild Semiconductor is a NPN power BJT with Darlington configuration, 125W power dissipation, and 10A collector current. Ideal for high-power applications requiring a max collector-emitter voltage of 100V and min DC current gain of 500 hFE. Commonly used in flange mount setups due to its rectangular package shape.
100 V
125 W
BDX34BTU
Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.
DARLINGTON
750
70 W
3 MHz
ST2001FX
ST2001FX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
245
55 W
MJD2955G
MJD2955G by Onsemi is a PNP BJT transistor with 60V VCE, 10A IC, and 20W power dissipation. Ideal for amplifier applications, it has a hFE of 5 and operates up to 150°C. This Gull Wing package with matte tin finish is surface mountable and offers a transition frequency of 2MHz.
60 V
20 W
MJF3055G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A;
90 V
30 W
2N6667G
2N6667G by Onsemi is a PNP BJT with 10A IC, 60V VCE, and 2W power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates up to 150 °C with hFE of at least 100, making it suitable for high-power tasks.
100
2 W
BUB323ZG
BUB323ZG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. With a max power dissipation of 150W and max collector-emitter voltage of 350V, it operates b/w -65 to 175°C. This surface-mount transistor has a min DC current gain of 500 and can handle up to 10A collector current.
2N3442G
The Onsemi 2N3442G is a NPN power BJT with max. collector-emitter voltage of 140V and max. collector current of 10A, ideal for switching applications. It has a min. DC current gain of 7.5 and can dissipate up to 117W power, suitable for high-power requirements in various electronic systems. With a max operating temperature of 200°C, it offers reliable performance in demanding environments.
7.5
TO-204AA
O-MBFM-P2
200 Cel
METAL
ROUND
117 W
PIN/PEG
BOTTOM
.08 MHz
BD809G
The Onsemi BD809G is a NPN BJT transistor with 80V VCE, 10A IC, and 90W Ptot. Ideal for amplifier applications due to its single configuration and high transition frequency of 1.5MHz. Packaged in plastic/epoxy with through-hole terminals for easy mounting.
15
90 W
1.5 MHz
BD810G
BD810G by Onsemi is a PNP BJT transistor with 80V VCE, 10A IC, and 90W power dissipation. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
BDV64BG
BDV64BG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100 V and a max collector current of 10 A. It is commonly used as an amplifier in various applications.
DARLINGTON WITH BUILT-IN RESISTOR
1000
.1 MHz
BDV65BG
BDV65BG by Onsemi is a NPN BJT with 1000 min hFE, 10A max IC, and 125W max power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in resistor. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.
BDX33BG
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 10 A;
LEADFORM OPTIONS ARE AVAILABLE
BDX34BG
BDX34BG by Onsemi is a PNP power BJT with 70W max power dissipation, 10A max collector current, and 150°C max operating temperature. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a min hFE of 750 and operates at a max VCE of 80V in a rectangular package style suitable for flange mount installations.
BDX34CG
BDX34CG by Onsemi is a PNP Power BJT with 70W power dissipation, 10A collector current, and 150°C max operating temp. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a max collector-emitter voltage of 100V and min DC current gain of 750 hFE.
BU323ZG
BU323ZG by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. This transistor has a min DC current gain of 500 and operates at temperatures up to 175°C.
MJ15011G
The Onsemi MJ15011G is a NPN BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with bottom terminal position.
250 V
200 W
MJD3055G
MJD3055G by Onsemi is a NPN BJT transistor with 60V VCE, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of 5, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.
MJF6668G
The Onsemi MJF6668G is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 40W power dissipation for switching applications at up to 150 °C. With a max collector-emitter voltage of 100V and collector current of 10A, it offers reliable performance in various electronic circuits.
TIP140G
TIP140G by Onsemi is a NPN power BJT with 125W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates at up to 150°C and has a min DC current gain of 500 (hFE).
4 MHz
TIP141G
TIP141G by Onsemi is a NPN Power BJT with 125W power dissipation, 80V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 500 and operating temperature up to 150°C, this transistor is suitable for various high-power electronic designs.
TIP145G
TIP145G by Onsemi is a PNP BJT with 125W power dissipation, 60V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With a min hFE of 500 and max operating temp of 150 °C, this transistor is suitable for high-power requirements.
TO-218
TIP33CG
TIP33CG by Onsemi is a NPN BJT transistor with 80W power dissipation, 100V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min hFE of 20 and operates at up to 150 °C. Its package style is flange mount with matte tin terminal finish.
20
80 W
TIP33AG
TIP33AG by Onsemi is a NPN power BJT with 80W max power dissipation, ideal for switching applications. It has a max collector-emitter voltage of 60V, 10A max collector current, and operates up to 150 °C. With a min hFE of 20 and fT of 3MHz, it's suitable for high-power electronic circuits in various industries.
ST1802FX
ST1802FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
60 W
MD1803DFX
MD1803DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 57W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
SINGLE WITH BUILT-IN DIODE
BD245A-S
Bourns
BD245A-S by Bourns is a NPN BJT transistor with max. 60V VCE, 10A IC, and min. hFE of 4. Ideal for switching applications at up to 150°C operating temp in through-hole package style.
e1
TIN SILVER COPPER
MD2009DFX
MD2009DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 58W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
BUILT-IN BIAS RESISTORS
58 W
NJVBUB323ZT4G
NJVBUB323ZT4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 350V, max operating temp of 175°C, and can handle up to 10A collector current. This power transistor comes in a small outline package suitable for surface mount assembly.
AEC-Q101
Matte Tin (Sn) - annealed
2N3716PBFREE
Central Semiconductor
2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.
400 ns
TO-3
MATTE TIN OVER NICKEL
700 ns
.8 V
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