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MJF6668G

Onsemi

MJF6668G by Onsemi

The Onsemi MJF6668G is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 40W power dissipation for switching applications at up to 150 °C. With a max collector-emitter voltage of 100V and collector current of 10A, it offers reliable performance in various electronic circuits.

Median Price

$0.959

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 522 parts In-Stock

1+ parts

-

100+ parts

$0.925

1k+ parts

$0.767

10k+ parts

$0.684

522

-

$0.925

$0.767

$0.684

DigiKey

USA . 522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.160

10k+ parts

-

522

-

-

$1.160

-

Verical

USA . 447 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.959

10k+ parts

$0.855

447

-

-

$0.959

$0.855

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,017 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

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2,017

$0.720

-

-

-

ComSIT Distribution GmbH

Germany . 18,118 parts In-Stock

1+ parts

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18,118

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Vyrian

USA . 7,281 parts In-Stock

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7,281

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Prism Electronics

USA . 34 parts In-Stock

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34

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,369 parts In-Stock

1+ parts

$0.682

100+ parts

-

1k+ parts

-

10k+ parts

-

1,369

$0.682

-

-

-

Corohmni

South Africa . 326 parts In-Stock

1+ parts

$0.758

100+ parts

-

1k+ parts

-

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326

$0.758

-

-

-

Microchip USA

USA . 196 parts In-Stock

1+ parts

$4.745

100+ parts

-

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196

$4.745

-

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AZTECH Wire

Italy . 685 parts In-Stock

1+ parts

$20.460

100+ parts

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685

$20.460

-

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Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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13,000

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TANS Electronics

Latvia . 7,851 parts In-Stock

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7,851

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SupplyDigital Components

Austria . 6,598 parts In-Stock

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6,598

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Kulean Microsystems

USA . 5,608 parts In-Stock

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5,608

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 1,788 parts In-Stock

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1,788

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UHIMA Technologies

Türkiye . 914 parts In-Stock

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914

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Continental Prestige Electronics

USA . 602 parts In-Stock

1+ parts

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100+ parts

$0.721

1k+ parts

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10k+ parts

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602

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$0.721

-

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Overview

Unleash the power of innovation with the MJF6668G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum power dissipation of 40W and a peak reflow temperature of 260 °C, this PNP transistor is a game-changer in the industry. Its Darlington configuration with built-in diode and resistor ensures seamless operation, while the high DC current gain of 100 guarantees optimal efficiency. Elevate your projects to new heights with the MJF6668G and experience the superior quality and reliability that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability for reliable performance.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP type transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers integrated components for ease of circuit design and space-saving benefits.

Transistor Application: SWITCHING

Designed specifically for switching applications for efficient operation.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and mounting on PCBs.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting on a flange for stability.

Minimum DC Current Gain (hFE): 100

Ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 100 V

Allows for handling of high voltage levels safely.

Transistor Element Material: SILICON

Provides good performance and reliability as compared to other materials.

Maximum Collector Current (IC): 10 A

Capable of handling high current levels for various applications.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance for long-term usage.

Terminal Position: SINGLE

Simplified connection and mounting for easy installation.

Case Connection: ISOLATED

Prevents electrical interference and ensures stable performance.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes for assembly.

Reference Standard: UL RECOGNIZED

Meets safety and quality standards for reliable performance.

Nominal Transition Frequency (fT): 20 MHz

Offers high-frequency capability for faster switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF6668G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF6668G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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