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MJF6388G

Onsemi

MJF6388G by Onsemi

MJF6388G by Onsemi is a NPN Power BJT with 100V VCEO, 10A IC, and 40W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and has a transition frequency of 20MHz.

Median Price

$1.675

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Chip1Stop

Japan . 232 parts In-Stock

1+ parts

$1.130

100+ parts

-

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232

$1.130

-

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Newark

USA . 627 parts In-Stock

1+ parts

$2.220

100+ parts

$0.880

1k+ parts

$0.739

10k+ parts

$0.723

627

$2.220

$0.880

$0.739

$0.723

Farnell

UK . 679 parts In-Stock

1+ parts

$2.390

100+ parts

$0.973

1k+ parts

$0.736

10k+ parts

-

679

$2.390

$0.973

$0.736

-

Mouser Electronics

USA . 520 parts In-Stock

1+ parts

$2.640

100+ parts

$1.100

1k+ parts

$0.855

10k+ parts

$0.825

520

$2.640

$1.100

$0.855

$0.825

DigiKey

USA . 6,758 parts In-Stock

1+ parts

$2.780

100+ parts

$1.237

1k+ parts

$0.920

10k+ parts

$0.826

6,758

$2.780

$1.237

$0.920

$0.826

Element14

Singapore . 679 parts In-Stock

1+ parts

$4.030

100+ parts

$1.650

1k+ parts

$1.200

10k+ parts

$1.180

679

$4.030

$1.650

$1.200

$1.180

Arrow

USA . 1,656 parts In-Stock

1+ parts

-

100+ parts

$1.068

1k+ parts

$0.839

10k+ parts

-

1,656

-

$1.068

$0.839

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Verical

USA . 1,650 parts In-Stock

1+ parts

-

100+ parts

$1.068

1k+ parts

$0.839

10k+ parts

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1,650

-

$1.068

$0.839

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Future Electronics

Canada . 350 parts In-Stock

1+ parts

-

100+ parts

$0.965

1k+ parts

$0.900

10k+ parts

$0.880

350

-

$0.965

$0.900

$0.880

Rochester

USA . 19 parts In-Stock

1+ parts

-

100+ parts

$1.120

1k+ parts

$0.930

10k+ parts

$0.829

19

-

$1.120

$0.930

$0.829

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 138 parts In-Stock

1+ parts

$0.765

100+ parts

-

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138

$0.765

-

-

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Vyrian

USA . 448 parts In-Stock

1+ parts

$0.805

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448

$0.805

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.008

100+ parts

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100

$1.008

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-

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TME

Poland . 18 parts In-Stock

1+ parts

$2.620

100+ parts

$1.150

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-

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18

$2.620

$1.150

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IBS Electronics

USA . 350 parts In-Stock

1+ parts

-

100+ parts

$1.353

1k+ parts

$1.227

10k+ parts

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350

-

$1.353

$1.227

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NAC Semi

USA . 300 parts In-Stock

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$1.750

10k+ parts

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300

-

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$1.750

-

Distributors (Availability)

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Benley Electronics

USA . 22 parts In-Stock

1+ parts

$0.450

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22

$0.450

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Corphita

USA . 420 parts In-Stock

1+ parts

$0.724

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420

$0.724

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Corohmni

South Africa . 75 parts In-Stock

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$0.827

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75

$0.827

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Component Stockers USA

USA . 1,776 parts In-Stock

1+ parts

$0.870

100+ parts

$1.280

1k+ parts

-

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1,776

$0.870

$1.280

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-

Continental Prestige Electronics

USA . 130 parts In-Stock

1+ parts

$1.820

100+ parts

$1.210

1k+ parts

$0.765

10k+ parts

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130

$1.820

$1.210

$0.765

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Microchip USA

USA . 7,926 parts In-Stock

1+ parts

$13.455

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7,926

$13.455

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Perfect Parts

USA . 33,970 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,875 parts In-Stock

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Problanco Electronics

Mexico . 7,172 parts In-Stock

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Lixinc

USA . 6,070 parts In-Stock

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6,070

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Kulean Microsystems

USA . 4,395 parts In-Stock

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4,395

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TANS Electronics

Latvia . 4,206 parts In-Stock

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4,206

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iodParts Technologies Inc.

India . 2,216 parts In-Stock

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2,216

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SupplyDigital Components

Austria . 1,337 parts In-Stock

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1,337

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Authorized Procurement Solutions

USA . 850 parts In-Stock

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850

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UHIMA Technologies

Türkiye . 106 parts In-Stock

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106

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Overview

Enhance your power electronic designs with the MJF6388G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 100V and a maximum collector current of 10A. With a built-in diode and resistor, this Darlington configuration provides convenience and efficiency in your projects. Trust Onsemi for superior performance and value in power transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Maximum Power Dissipation (Abs): 40 W

High power dissipation allows for the transistor to handle large amounts of power without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures efficient amplification and switching operations, providing reliable performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating allows for the transistor to handle higher voltages, expanding its application range.

Maximum Collector Current (IC): 10 A

A high collector current rating allows for the transistor to handle larger currents, making it suitable for high-power switching applications.

Nominal Transition Frequency (fT): 20 MHz

The high transition frequency enables fast switching speeds and high-frequency performance, making it ideal for applications requiring rapid switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF6388G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF6388G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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