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MJF6107

Onsemi

MJF6107 by Onsemi

MJF6107 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 34W, and max collector current of 7A. Ideal for switching applications, it operates at up to 150 °C with a collector-emitter voltage of 70V. The package style is flange mount with through-hole terminals.

Median Price

$1.000

Lifecycle Status

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1k+

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TEDSS.com

USA . 50 parts In-Stock

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$0.650

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Digiode

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Electronics Depot

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MISTER SPROCKETS

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Corohmni

South Africa . 169 parts In-Stock

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Kepictronics

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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Overview

Discover the Onsemi MJF6107 Power Bipolar Junction Transistor, a top-of-the-line product designed to enhance your electronic projects. With its reliable manufacturer, Onsemi, and high-quality construction, this PNP transistor offers unparalleled performance in switching applications. Whether you're a hobbyist or a professional, the MJF6107 guarantees efficiency and durability with its maximum collector-emitter voltage of 70V and maximum current of 7A. Upgrade your projects today with the Onsemi MJF6107 and experience the difference in quality and reliability it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Simplifies the circuit design by only requiring one transistor for switching operations, reducing complexity and potential errors.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency in switching tasks.

Maximum Power Dissipation (Abs): 34 W

With a high power dissipation capability, this transistor can handle higher power loads without overheating or damage.

Maximum Collector-Emitter Voltage: 70 V

Can handle high voltages without breakdown, making it suitable for applications requiring higher voltage operation.

Maximum Collector Current (IC): 7 A

Capable of handling high current loads, making it suitable for applications that require higher current switching.

Nominal Transition Frequency (fT): 4 MHz

With a high transition frequency, this transistor can switch rapidly between on and off states, making it ideal for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF6107 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

70 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF6107 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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