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MJF6388

Onsemi

MJF6388 by Onsemi

MJF6388 by Onsemi is a NPN Power BJT with 40W power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a max collector-emitter voltage of 100V and max collector current of 10A. Its package style is flange mount, making it suitable for various industrial uses.

Median Price

$0.475

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.395

10k+ parts

$0.352

12

-

$0.475

$0.395

$0.352

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,089 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

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1,089

$0.370

-

-

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Forefront Electronics and Design

USA . 2 parts In-Stock

1+ parts

$24.500

100+ parts

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2

$24.500

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Vyrian

USA . 3,286 parts In-Stock

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3,286

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Q Components

USA . 108 parts In-Stock

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108

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Lantek

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Corphita

USA . 1,724 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

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1,724

$0.351

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Corohmni

South Africa . 495 parts In-Stock

1+ parts

$0.390

100+ parts

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495

$0.390

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 16,665 parts In-Stock

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16,665

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Problanco Electronics

Mexico . 6,896 parts In-Stock

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6,896

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SupplyDigital Components

Austria . 6,236 parts In-Stock

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6,236

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TANS Electronics

Latvia . 3,592 parts In-Stock

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3,592

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Kulean Microsystems

USA . 1,136 parts In-Stock

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1,136

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UHIMA Technologies

Türkiye . 510 parts In-Stock

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510

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Assy Fe

Spain . 1 parts In-Stock

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1

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Overview

Enhance your power management solutions with the MJF6388 by Onsemi. Crafted by a leading manufacturer in the industry, this Power BJT offers unparalleled quality and reliability. Ideal for switching applications, this NPN Darlington transistor boasts a built-in diode and resistor, maximizing efficiency. With a maximum collector current of 10A and a nominal transition frequency of 20MHz, this product delivers exceptional performance. Trust in the MJF6388 to provide the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing versatility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration allows for high current gain and the built-in diode and resistor add convenience and functionality to the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient control of current flow.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle significant power loads without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of operating conditions.

Nominal Transition Frequency (fT): 20 MHz

The high nominal transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF6388 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF6388 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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