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SINGLE WITH BUILT-IN DIODE Power Bipolar Junction Transistors (BJT) 32

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TRD136DT4 by STMicroelectronics

TRD136DT4

STMicroelectronics

STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.

3 A

400 V

SINGLE WITH BUILT-IN DIODE

10

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

20 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

TRD236DT4 by STMicroelectronics

TRD236DT4

STMicroelectronics

STMicroelectronics TRD236DT4 is a NPN BJT transistor with 400V VCEO and 4A IC. It has a max power dissipation of 35W, hFE of 8, and operates up to 150 °C. Ideal for switching applications in surface mount designs due to its small outline package and built-in diode configuration.

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

35 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

STT13005D-K by STMicroelectronics

STT13005D-K

STMicroelectronics

STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL58D by STMicroelectronics

BUL58D

STMicroelectronics

BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

8 A

450 V

SINGLE WITH BUILT-IN DIODE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

85 W

75 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1980 ns

2 V

BULK128D-B by STMicroelectronics

BULK128D-B

STMicroelectronics

STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

55 W

55 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1.5 V

BUL39D by STMicroelectronics

BUL39D

STMicroelectronics

BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.

4 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1600 ns

1.1 V

BUL1403ED by STMicroelectronics

BUL1403ED

STMicroelectronics

BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.

3 A

650 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL903ED by STMicroelectronics

BUL903ED

STMicroelectronics

BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.

5 A

400 V

SINGLE WITH BUILT-IN DIODE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULD118D-1 by STMicroelectronics

BULD118D-1

STMicroelectronics

BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.

HIGH RELIABILITY

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-251AA

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

20 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4900 ns

1.5 V

STD127DT4 by STMicroelectronics

STD127DT4

STMicroelectronics

STD127DT4 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and hFE of 5. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

4 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-252

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NJL21193DG by Onsemi

NJL21193DG

Onsemi

NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.

16 A

250 V

SINGLE WITH BUILT-IN DIODE

8

R-PSFM-T5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

NJL21194DG by Onsemi

NJL21194DG

Onsemi

NJL21194DG by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications, it features a single configuration with built-in diode in a rectangular flange mount package.

16 A

250 V

SINGLE WITH BUILT-IN DIODE

8

R-PSFM-T5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

NJL0281DG by Onsemi

NJL0281DG

Onsemi

NJL0281DG by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 180W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, featuring a transition frequency of 30MHz in a rectangular package style.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

75

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

180 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL0302DG by Onsemi

NJL0302DG

Onsemi

NJL0302DG by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration with built-in diode and high collector current of 15A.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

75

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

180 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL4281DG by Onsemi

NJL4281DG

Onsemi

NJL4281DG by Onsemi is a NPN BJT transistor with 350V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its hFE of 10 and fT of 35MHz. Packaged in PLASTIC/EPOXY with FLANGE MOUNT style for through-hole mounting.

HIGH RELIABILITY

15 A

350 V

SINGLE WITH BUILT-IN DIODE

10

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

200 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz

NJL4302DG by Onsemi

NJL4302DG

Onsemi

NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.

HIGH RELIABILITY

15 A

350 V

SINGLE WITH BUILT-IN DIODE

10

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

200 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz

BUL49DFP by STMicroelectronics

BUL49DFP

STMicroelectronics

BUL49DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 34W, a collector-emitter voltage of 450V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

5 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

34 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STL128DNFP by STMicroelectronics

STL128DNFP

STMicroelectronics

STL128DNFP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 28W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

ISOLATED

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

28 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL128DN by STMicroelectronics

STL128DN

STMicroelectronics

STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

40 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL106D by STMicroelectronics

STL106D

STMicroelectronics

STL106D by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, a collector-emitter voltage of 230V, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

1.5 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

BULT106D by STMicroelectronics

BULT106D

STMicroelectronics

BULT106D by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 230 V, a power dissipation of 32 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

2 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

32 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STT13005D by STMicroelectronics

STT13005D

STMicroelectronics

STT13005D from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST13007DFP by STMicroelectronics

ST13007DFP

STMicroelectronics

ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.

ISOLATED

8 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULB49DT4 by STMicroelectronics

BULB49DT4

STMicroelectronics

BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

5 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

80 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

ST13003DN by STMicroelectronics

ST13003DN

STMicroelectronics

ST13003DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 20W, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NJL1302D by Onsemi

NJL1302D

Onsemi

NJL1302D by Onsemi is a PNP BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Features include 45 min DC current gain (hFE) and 30MHz nominal transition frequency.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

45

TO-264

R-PSFM-T5

e0

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL3281D by Onsemi

NJL3281D

Onsemi

NJL3281D by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

45

TO-264

R-PSFM-T5

e0

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

BUD42D-1G by Onsemi

BUD42D-1G

Onsemi

BUD42D-1G by Onsemi is a NPN BJT transistor with 350V VCE, 4A IC, and 25W Ptot. Ideal for switching applications, it has a single configuration with built-in diode in a plastic/epoxy package suitable for through-hole mounting.

BUILT-IN ANTISATURATION NETWORK

COLLECTOR

4 A

350 V

SINGLE WITH BUILT-IN DIODE

10

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

25 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

BUL642D2G by Onsemi

BUL642D2G

Onsemi

BUL642D2G by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a compact package. Suitable for use in various electronic devices due to its high collector current and temperature capabilities.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

3 A

440 V

SINGLE WITH BUILT-IN DIODE

18

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

13 MHz

MJD18002D2T4G by Onsemi

MJD18002D2T4G

Onsemi

MJD18002D2T4G by Onsemi is a NPN BJT transistor with 450V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. With an hFE of 6 and fT of 13MHz, this transistor operates b/w -65 °C to +150°C.

FREE WHEELING DIODE

COLLECTOR

2 A

450 V

SINGLE WITH BUILT-IN DIODE

6

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

50 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

13 MHz

MJE18004D2G by Onsemi

MJE18004D2G

Onsemi

MJE18004D2G by Onsemi is a NPN BJT transistor with 450V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

5 A

450 V

SINGLE WITH BUILT-IN DIODE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz

MD1803DFX by STMicroelectronics

MD1803DFX

STMicroelectronics

MD1803DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 57W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE

5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

57 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON