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Onsemi Diodes & Rectifiers 646

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SURS8220T3G by Onsemi

SURS8220T3G

Onsemi

SURS8220T3G by Onsemi is a single rectifier diode with 0.035 us reverse recovery time and 2 uA reverse current. It operates in high voltage ultra-fast power applications, with a max forward voltage of 0.95 V and output current of 2 A. Suitable for temperatures ranging from -65 to 175 °C, it has a matte tin finish and dual terminals.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-J2

e3

1

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

200 V

2 uA

.035 us

Rectifier Diodes

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

NRVB120ESFT3G by Onsemi

NRVB120ESFT3G

Onsemi

NRVB120ESFT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates b/w -65 °C to 150°C, has a peak reflow temperature of 260°C, and can handle up to 20V reverse voltage. Ideal for automotive applications due to AEC-Q101 compliance.

FREE WHEELING DIODE

SINGLE

SILICON

RECTIFIER DIODE

.36 V

R-PDSO-F2

e3

1

40 A

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

20 V

Rectifier Diodes

YES

SCHOTTKY

TIN

FLAT

DUAL

30

NRVB120LSFT1G by Onsemi

NRVB120LSFT1G

Onsemi

NRVB120LSFT1G by Onsemi is a Schottky rectifier diode with 20V max reverse voltage and 1A output current. It operates b/w -55 to 125 °C, making it ideal for automotive applications due to AEC-Q101 compliance. This single-configured diode in small outline package suits surface mount designs.

FREE WHEELING DIODE

SINGLE

SILICON

RECTIFIER DIODE

.26 V

R-PDSO-F2

e3

1

50 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

20 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVBA130LT3G by Onsemi

NRVBA130LT3G

Onsemi

NRVBA130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.47V. It operates b/w -55 to 125 °C, making it suitable for automotive applications requiring high efficiency and low power loss in a compact small outline package.

FREE WHEELING DIODE

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

.47 V

R-PDSO-C2

e3

1

25 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

1000 uA

30 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

NRVBM110LT1G by Onsemi

NRVBM110LT1G

Onsemi

NRVBM110LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.175V and output current of 1A. It operates b/w -55 °C to 125°C, making it suitable for automotive applications meeting AEC-Q101 standards. The diode has a max repetitive peak reverse voltage of 10V and non-repetitive peak forward current of 50A, housed in a small outline rectangular package for surface mount assembly.

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.175 V

DO-216AA

R-PSSO-G1

e3

1

50 A

1

1

1

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

10 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

NRVBM110LT3G by Onsemi

NRVBM110LT3G

Onsemi

NRVBM110LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and a max forward voltage of 0.175V. It operates b/w -55 °C to 125°C, making it suitable for automotive applications due to its AEC-Q101 reference standard compliance. The diode's small outline package style and gull wing terminal form enable surface mount installation in various electronic devices.

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.175 V

DO-216AA

R-PSSO-G1

e3

1

1

1

1

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

10 V

Rectifier Diodes

YES

SCHOTTKY

TIN

GULL WING

SINGLE

30

MBRAF1540T3G by Onsemi

MBRAF1540T3G

Onsemi

MBRAF1540T3G by Onsemi is a Schottky rectifier diode with a max output current of 1.5A and a max repetitive peak reverse voltage of 40V. It is designed for power applications, operates b/w -55 to 150 °C, and features a small outline package style suitable for surface mount assembly.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.54 V

R-PDSO-F2

e3

1

40 A

1

1

2

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

800 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVB5H100MFST1G by Onsemi

NRVB5H100MFST1G

Onsemi

NRVB5H100MFST1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.73V and a max output current of 5A. It is designed for efficiency applications, has a max operating temperature of 175°C, and can handle a max repetitive peak reverse voltage of 100V.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.73 V

R-PDSO-F6

e3

1

200 A

1

1

6

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NHPJ08S600G by Onsemi

NHPJ08S600G

Onsemi

NHPJ08S600G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and max output current of 8A. It is designed for high voltage ultra-fast recovery power applications, featuring a max repetitive peak reverse voltage of 600V and operating temperature range from -55 to 150 °C.

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

3.2 V

TO-220AC

R-PSFM-T2

e3

80 A

1

1

2

150 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

600 V

30 uA

.05 us

Rectifier Diodes

NO

BLANK

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

NHPJ15S600G by Onsemi

NHPJ15S600G

Onsemi

NHPJ15S600G by Onsemi is a single rectifier diode with 600V peak reverse voltage and 15A output current. It features a fast recovery time of 0.05us and low reverse current of 60uA, making it ideal for high voltage power applications. The diode operates b/w -55 to 150 °C and has a tin terminal finish in a rectangular flange mount package style.

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

3.2 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

600 V

60 uA

.05 us

Rectifier Diodes

NO

BLANK

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

NHPV15S600G by Onsemi

NHPV15S600G

Onsemi

NHPV15S600G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and a max output current of 15 A. It is designed for high voltage ultra-fast recovery power applications, featuring a max repetitive peak reverse voltage of 600 V and operating temperatures ranging from -55 to 150 °C.

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

3.2 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

600 V

60 uA

.05 us

Rectifier Diodes

NO

BLANK

MATTE TIN

THROUGH-HOLE

SINGLE

NTSB40100CTG by Onsemi

NTSB40100CTG

Onsemi

NTSB40100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -40 to 150°C, has a max reverse voltage of 100V, and is ideal for high-efficiency applications.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

1000 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

NTSB40100CTT4G by Onsemi

NTSB40100CTT4G

Onsemi

NTSB40100CTT4G by Onsemi is a Schottky rectifier diode with common cathode configuration. It has a max output current of 20A and max repetitive peak reverse voltage of 100V. Ideal for applications requiring high efficiency, it operates b/w -40 to 150°C temperatures.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

1000 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

NTSJ40100CTG by Onsemi

NTSJ40100CTG

Onsemi

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

TO-220AB

R-PSFM-T3

e3

250 A

2

1

3

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

100 V

1000 uA

Rectifier Diodes

NO

SCHOTTKY

TIN

THROUGH-HOLE

SINGLE

MBRB41H100CT-1H by Onsemi

MBRB41H100CT-1H

Onsemi

MBRB41H100CT-1H by Onsemi is a common cathode rectifier diode with 2 elements. It has a max output current of 20A and a max repetitive peak reverse voltage of 100V. Ideal for applications requiring high efficiency, this diode operates at temperatures up to 175 °C.

LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.9 V

TO-262AA

R-PSIP-T3

350 A

2

1

3

175 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

100 V

10 uA

Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

RD0506LS-SB-1H by Onsemi

RD0506LS-SB-1H

Onsemi

RD0506LS-SB-1H by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and a max output current of 5A. It is designed for ultra-fast recovery applications, featuring a max repetitive peak reverse voltage of 600V and operating temperature up to 150 °C.

HIGH RELIABILITY, LOW NOISE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.6 V

TO-220AC

R-PSFM-T2

e3

120 A

1

1

2

150 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

600 V

50 uA

.05 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

MBR440MFST1G by Onsemi

MBR440MFST1G

Onsemi

MBR440MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.65V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This diode has a max reverse voltage of 40V and non-repetitive peak forward current of 40A, ideal for various electronic circuits.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.65 V

R-PDSO-F5

e3

1

40 A

1

1

5

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

800 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR460MFST3G by Onsemi

MBR460MFST3G

Onsemi

MBR460MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.74V. It operates efficiently at temperatures ranging from -55 to 175 °C, making it suitable for various applications requiring high-speed switching and low power loss in compact designs.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.74 V

R-PDSO-F5

e3

1

40 A

1

1

5

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

200 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR5100MFST1G by Onsemi

MBR5100MFST1G

Onsemi

MBR5100MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and max reverse voltage of 100V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This single-configured diode has a small outline package style and matte tin terminal finish for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.98 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

10 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR5100MFST3G by Onsemi

MBR5100MFST3G

Onsemi

MBR5100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 5A output current, and 0.98V forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 175°C. This single-configured diode has a small outline package with matte tin finish and dual terminals.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.98 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

10 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR540MFST1G by Onsemi

MBR540MFST1G

Onsemi

MBR540MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and a max repetitive peak reverse voltage of 40V. It operates efficiently with an operating temperature range from -40°C to 175°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. The diode's small outline package style, matte tin terminal finish, and dual terminal position make it ideal for surface mount applications.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.58 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-40 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

2000 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR540MFST3G by Onsemi

MBR540MFST3G

Onsemi

MBR540MFST3G by Onsemi is a Schottky rectifier diode with 40V reverse voltage and 5A output current. It operates b/w -40 to 175 °C, featuring a max forward voltage of 0.58V. Ideal for efficiency applications, this diode has a matte tin finish and dual terminal position in a small outline package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.58 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-40 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

2000 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR560MFST1G by Onsemi

MBR560MFST1G

Onsemi

MBR560MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and forward voltage of 0.78V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max reverse voltage of 60V and non-repetitive forward current of 100A, it offers reliable performance in various electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.78 V

R-PDSO-F5

e3

1

100 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR560MFST3G by Onsemi

MBR560MFST3G

Onsemi

MBR560MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 60V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high-speed switching and low forward voltage drop. The diode's small outline package with matte tin terminal finish enables surface mount installation for compact electronic designs.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.78 V

R-PDSO-F5

e3

1

100 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVB440MFST1G by Onsemi

NRVB440MFST1G

Onsemi

NRVB440MFST1G by Onsemi is a Schottky rectifier diode with 40V reverse voltage, 4A output current, and 800uA reverse current. It is used for efficiency applications in a small outline package with dual terminals and matte tin finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.65 V

R-PDSO-F5

e3

1

40 A

1

1

5

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

800 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB5100MFST3G by Onsemi

NRVB5100MFST3G

Onsemi

NRVB5100MFST3G by Onsemi is a Schottky rectifier diode with a max reverse current of 10uA and forward voltage of 0.98V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max repetitive peak reverse voltage of 100V and output current of 5A, it is ideal for various electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.98 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

10 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVBSS24T3G by Onsemi

NRVBSS24T3G

Onsemi

NRVBSS24T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 2A max output current. It is ideal for power applications, operating b/w -55 to 150 °C, featuring a small outline package style for surface mount assembly.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-J2

e3

1

75 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

400 uA

40 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

J BEND

DUAL

30

NRVTS8100MFST3G by Onsemi

NRVTS8100MFST3G

Onsemi

NRVTS8100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 8A output current, and 0.73V forward voltage. It is used for efficiency applications in automotive industry due to AEC-Q101 standard compliance.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.73 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

70 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVBSS26T3G by Onsemi

NRVBSS26T3G

Onsemi

NRVBSS26T3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 60V and forward voltage of 0.63V. It has a max output current of 2A, making it suitable for power applications. This diode operates b/w -55°C to 150°C and is AEC-Q101 compliant, ideal for automotive electronics.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.63 V

R-PDSO-C2

e3

1

40 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

200 uA

60 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

MBR140ESFT3G by Onsemi

MBR140ESFT3G

Onsemi

The Onsemi MBR140ESFT3G is a Schottky rectifier diode with a max forward voltage of 0.51V and output current of 1A. With a repetitive peak reverse voltage of 40V, it is ideal for applications requiring high-speed switching in electronics. This surface-mount diode operates at temperatures up to 175°C, making it suitable for various industrial and automotive applications.

SINGLE

SILICON

RECTIFIER DIODE

.51 V

e3

1

30 A

1

1

175 Cel

1 A

260

40 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

30

SBS817-TL-E by Onsemi

SBS817-TL-E

Onsemi

SBS817-TL-E by Onsemi is a Schottky rectifier diode with 2 elements, offering a max output current of 2A and forward voltage of 0.46V. With a reverse test voltage of 7.5V and fast recovery time of 0.01us, it is ideal for applications requiring high efficiency and low power loss in compact electronic devices.

GENERAL PURPOSE

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.46 V

R-PDSO-F8

e6

1

20 A

2

1

8

125 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

15 V

300 uA

.01 us

7.5 V

Other Diodes

YES

SCHOTTKY

TIN BISMUTH

FLAT

DUAL

SB05-03C-TB-E by Onsemi

SB05-03C-TB-E

Onsemi

SB05-03C-TB-E by Onsemi is a Schottky rectifier diode with a max output current of 0.5A and a max repetitive peak reverse voltage of 30V. It has a fast max reverse recovery time of 0.01us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode is designed in a small outline package style with gull wing terminals for surface mount assembly, offering efficient performance in temperatures ranging from -55°C to 125°C.

HIGH RELIABILITY

SINGLE

SILICON

RECTIFIER DIODE

TO-236AB

R-PDSO-G3

e6

1

1

1

3

125 Cel

-55 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

.01 us

YES

SCHOTTKY

TIN BISMUTH

GULL WING

DUAL

30

RD0506T-H by Onsemi

RD0506T-H

Onsemi

RD0506T-H by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.05 us and max reverse current of 50 uA. It operates at a max temperature of 150 °C, has a forward voltage of 1.6V, and can handle an output current of 5A. Ideal for applications requiring high-speed switching capabilities in electronic circuits.

LOW NOISE

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.6 V

TO-251

R-PSIP-T3

e6

80 A

1

1

3

150 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

600 V

50 uA

.05 us

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

UD1006FR-H by Onsemi

UD1006FR-H

Onsemi

UD1006FR-H by Onsemi is a single rectifier diode with a max reverse recovery time of 0.15 us and a max output current of 10 A. It has a package style of flange mount and is designed for ultra-fast recovery applications, operating at temperatures up to 150°C.

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

TO-220AC

R-PSFM-T2

e3

120 A

1

1

2

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

600 V

100 uA

.15 us

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

NSR05F30QNXT5G by Onsemi

NSR05F30QNXT5G

Onsemi

NSR05F30QNXT5G by Onsemi is a Schottky rectifier diode with 30V reverse voltage, 0.36V forward voltage, and 0.5A output current. Ideal for applications requiring high efficiency power conversion in compact electronic devices.

SINGLE

SILICON

RECTIFIER DIODE

.36 V

e4

1

10 A

1

1

150 Cel

.5 A

260

30 V

Rectifier Diodes

YES

SCHOTTKY

NICKEL GOLD

NSR10F30QNXT5G by Onsemi

NSR10F30QNXT5G

Onsemi

NSR10F30QNXT5G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.42V and output current of 1A. Operating at up to 150 °C, it has a repetitive peak reverse voltage of 30V. Ideal for applications requiring high efficiency and low power loss in compact electronic devices.

SINGLE

SILICON

RECTIFIER DIODE

.42 V

1

18 A

1

1

150 Cel

1 A

260

30 V

Rectifier Diodes

YES

SCHOTTKY

MBR10100MFST3G by Onsemi

MBR10100MFST3G

Onsemi

MBR10100MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high-speed switching and low forward voltage drop. The diode's small outline package with surface mount capability enhances its versatility in electronic circuit designs.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR1045MFST1G by Onsemi

MBR1045MFST1G

Onsemi

MBR1045MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 10A and a max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR1045MFST3G by Onsemi

MBR1045MFST3G

Onsemi

MBR1045MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a surface-mount package style for easy installation.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR1240MFST1G by Onsemi

MBR1240MFST1G

Onsemi

MBR1240MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max repetitive peak reverse voltage of 40V. It operates efficiently at temperatures ranging from -55 °C to 150°C, making it suitable for various applications requiring high power efficiency. This diode is designed for surface mount installation in electronic devices.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR1240MFST3G by Onsemi

MBR1240MFST3G

Onsemi

MBR1240MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and a max forward voltage of 0.68V. It operates efficiently in temperatures ranging from -55 to 150 °C, making it suitable for various applications requiring high power efficiency. This diode has a package style of small outline and features surface mount technology for easy installation.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR2045EMFST1G by Onsemi

MBR2045EMFST1G

Onsemi

MBR2045EMFST1G by Onsemi is a Schottky rectifier diode with 45V max repetitive peak reverse voltage, 20A max output current, and 0.64V max forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 150°C.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.64 V

R-PDSO-F5

e3

1

400 A

1

1

5

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

400 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR30H100MFST1G by Onsemi

MBR30H100MFST1G

Onsemi

MBR30H100MFST1G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 30A output current, and 0.9V forward voltage. It is used for efficiency applications in temperatures ranging from -55°C to 175°C. The diode has a plastic/epoxy package, matte tin finish, and dual terminals for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

300 A

1

1

5

175 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR830MFST1G by Onsemi

MBR830MFST1G

Onsemi

MBR830MFST1G by Onsemi is a Schottky rectifier diode with 30V max reverse voltage and 8A max output current. It operates b/w -40 to 150 °C, ideal for efficiency applications. This single-configured diode has a matte tin finish, flat terminal form, and small outline package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

200 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR830MFST3G by Onsemi

MBR830MFST3G

Onsemi

MBR830MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.7V. It operates efficiently in temperatures ranging from -40 to 150 °C, making it suitable for various applications requiring high-speed switching and low power loss. With a max repetitive peak reverse voltage of 30V, this diode is ideal for use in electronics where reliability and performance are crucial.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR860MFST1G by Onsemi

MBR860MFST1G

Onsemi

MBR860MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 60V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. This diode is designed for surface mount installation in electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR860MFST3G by Onsemi

MBR860MFST3G

Onsemi

MBR860MFST3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 175 °C. This single-config diode has a small outline package with dual terminals and surface mount capability.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

TIN

FLAT

DUAL

30

MBR8H100MFST3G by Onsemi

MBR8H100MFST3G

Onsemi

MBR8H100MFST3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.9V and max output current of 8A. It is used for efficiency applications, has a max operating temperature of 175°C, and comes in a small outline package with dual terminals.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

2 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30