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SURS8220T3G

Onsemi

SURS8220T3G by Onsemi

SURS8220T3G by Onsemi is a single rectifier diode with 0.035 us reverse recovery time and 2 uA reverse current. It operates in high voltage ultra-fast power applications, with a max forward voltage of 0.95 V and output current of 2 A. Suitable for temperatures ranging from -65 to 175 °C, it has a matte tin finish and dual terminals.

Median Price

$0.165

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

EBV Elektronik

Germany . 40,000 parts In-Stock

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DigiKey

USA . 7,500 parts In-Stock

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$0.140

7,500

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$0.140

Rochester

USA . 5,188 parts In-Stock

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$0.178

1k+ parts

$0.148

10k+ parts

$0.132

5,188

-

$0.178

$0.148

$0.132

Verical

USA . 5,000 parts In-Stock

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$0.165

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$0.165

Distributors (In-Stock)

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Nova Conductors

Japan . 600 parts In-Stock

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$0.136

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600

$0.136

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Digiode

USA . 1,777 parts In-Stock

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$0.145

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1,777

$0.145

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Bristol Electronics

USA . 20,848 parts In-Stock

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$0.412

100+ parts

$0.153

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$0.107

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20,848

$0.412

$0.153

$0.107

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Chip Stock

USA . 113,205 parts In-Stock

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Dan-Mar Components

USA . 19,572 parts In-Stock

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J2 Sourcing AB

Sweden . 12,500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 10,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 7,500 parts In-Stock

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Flip Electronics

USA . 7,500 parts In-Stock

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Vyrian

USA . 6,658 parts In-Stock

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Microfarads

USA . 921 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 266 parts In-Stock

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$0.030

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266

$0.030

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Semicontronic

India . 22,114 parts In-Stock

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$0.130

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$0.127

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$0.126

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22,114

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$0.126

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Corohmni

South Africa . 117 parts In-Stock

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$0.134

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Continental Prestige Electronics

USA . 6,139 parts In-Stock

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$0.136

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$0.134

6,139

$0.136

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$0.134

Argo Parts USA

USA . 4,861 parts In-Stock

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$0.136

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$0.132

4,861

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Netroflash

USA . 1,000 parts In-Stock

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$0.136

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$0.136

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Corphita

USA . 257 parts In-Stock

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$0.138

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Ampacity Inc.

Singapore . 22,282 parts In-Stock

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$0.283

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AZTECH Wire

Italy . 1,137 parts In-Stock

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$13.620

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Kepictronics

USA . 66,540 parts In-Stock

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Futuretech Components

Singapore . 40,000 parts In-Stock

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Lixinc

USA . 17,489 parts In-Stock

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Infinite Electronics LLP (Excess)

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iodParts Technologies Inc.

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SupplyDigital Components

Austria . 7,694 parts In-Stock

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TANS Electronics

Latvia . 7,679 parts In-Stock

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ChipstoGo Electronic ltd

UK . 7,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,721 parts In-Stock

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Problanco Electronics

Mexico . 1,199 parts In-Stock

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Kulean Microsystems

USA . 795 parts In-Stock

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Formix International (Excess)

India . 374 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Experience the exceptional quality and reliability of the SURS8220T3G diode by Onsemi, a leading manufacturer in the industry. This diode is perfect for high voltage ultra-fast recovery power applications, offering customers a superior performance and efficiency. With a maximum reverse recovery time of 0.035 us and a maximum output current of 2A, this diode provides outstanding results. Trust in Onsemi's expertise and choose the SURS8220T3G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the design and installation process, making it a convenient choice for users.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures efficient and reliable performance in high-speed applications.

Maximum Reverse Current: 2 uA

Low reverse current results in lower power losses and improved overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into various electronic circuits.

No. of Terminals: 2

Having two terminals simplifies the connection process and allows for easy installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB while providing high performance capabilities.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage and ultra-fast recovery power applications, ensuring reliability in demanding environments.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, the diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -65 °C

The wide temperature range allows for use in extreme environments, increasing the versatility of the diode.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and corrosion resistance, ensuring long-term reliability of the diode connections.

Terminal Position: DUAL

Having dual terminal positions offers flexibility in installation and connection options, making it suitable for a variety of configurations.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high quality and reliability, meeting industry requirements for automotive applications.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it efficiently converts AC to DC, making it suitable for various power supply and rectification applications.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop results in reduced power losses and improved efficiency of the diode during operation.

Maximum Output Current: 2 A

With a maximum output current of 2A, the diode can handle moderate power loads effectively.

Terminal Form: J BEND

J bend terminal form allows for easy and secure soldering to the PCB, ensuring reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high repetitive peak reverse voltage rating makes it suitable for high voltage applications, providing robust protection.

Maximum Non Repetitive Peak Forward Current: 40 A

The high non-repetitive peak forward current rating ensures reliable performance during surge conditions, making it ideal for demanding applications.

Diode Element Material: SILICON

Silicon diode element material offers excellent performance and reliability characteristics, making it a popular choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers SURS8220T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURS8220T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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