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SURS8320T3G-VF01

Onsemi

SURS8320T3G-VF01 by Onsemi

SURS8320T3G-VF01 by Onsemi is a single diode with 200V reverse test voltage, 0.035us recovery time, and 5uA reverse current. Ideal for high voltage ultra-fast power applications, it operates b/w -65 to 175 °C with a max forward voltage of 0.89V and output current of 4A.

Median Price

$0.472

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,875 parts In-Stock

1+ parts

$1.240

100+ parts

$0.511

1k+ parts

$0.359

10k+ parts

-

1,875

$1.240

$0.511

$0.359

-

Mouser Electronics

USA . 1,565 parts In-Stock

1+ parts

$1.240

100+ parts

$0.511

1k+ parts

$0.359

10k+ parts

$0.280

1,565

$1.240

$0.511

$0.359

$0.280

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.236

2,500

-

-

-

$0.236

EBV Elektronik

Germany . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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2,500

-

-

-

-

Verical

USA . 1,680 parts In-Stock

1+ parts

-

100+ parts

$0.445

1k+ parts

$0.330

10k+ parts

$0.265

1,680

-

$0.445

$0.330

$0.265

Chip1Stop

Japan . 1,680 parts In-Stock

1+ parts

-

100+ parts

$0.472

1k+ parts

$0.326

10k+ parts

$0.230

1,680

-

$0.472

$0.326

$0.230

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.331

100+ parts

-

1k+ parts

-

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750

$0.331

-

-

-

Digiode

USA . 1,307 parts In-Stock

1+ parts

$1.092

100+ parts

-

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-

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1,307

$1.092

-

-

-

Chip Stock

USA . 70,000 parts In-Stock

1+ parts

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100+ parts

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70,000

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-

-

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IBS Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.337

15,000

-

-

-

$0.337

NAC Semi

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.490

12,500

-

-

-

$0.490

Vyrian

USA . 3,188 parts In-Stock

1+ parts

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3,188

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,751 parts In-Stock

1+ parts

$0.201

100+ parts

-

1k+ parts

-

10k+ parts

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1,751

$0.201

-

-

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Corohmni

South Africa . 370 parts In-Stock

1+ parts

$0.236

100+ parts

-

1k+ parts

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370

$0.236

-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.324

100+ parts

-

1k+ parts

$0.311

10k+ parts

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1,000

$0.324

-

$0.311

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Argo Parts USA

USA . 2,884 parts In-Stock

1+ parts

$0.331

100+ parts

-

1k+ parts

-

10k+ parts

$0.321

2,884

$0.331

-

-

$0.321

Continental Prestige Electronics

USA . 2,454 parts In-Stock

1+ parts

$0.331

100+ parts

-

1k+ parts

-

10k+ parts

$0.324

2,454

$0.331

-

-

$0.324

Corphita

USA . 458 parts In-Stock

1+ parts

$1.035

100+ parts

-

1k+ parts

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458

$1.035

-

-

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Kulean Microsystems

USA . 7,882 parts In-Stock

1+ parts

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100+ parts

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7,882

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Problanco Electronics

Mexico . 6,189 parts In-Stock

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6,189

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SupplyDigital Components

Austria . 4,896 parts In-Stock

1+ parts

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4,896

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TANS Electronics

Latvia . 2,169 parts In-Stock

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2,169

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UHIMA Technologies

Türkiye . 987 parts In-Stock

1+ parts

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100+ parts

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987

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Overview

Discover the cutting-edge technology of the SURS8320T3G-VF01 by Onsemi, a high-quality rectifier diode designed for high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of 0.035 us and a maximum output current of 4A, this diode offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, you can trust that this product will exceed your expectations. Whether you're working on automotive electronics or industrial machinery, the SURS8320T3G-VF01 provides the value, benefits, and advantages you need to succeed. Upgrade your projects today with this top-of-the-line diode!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, increasing its reliability and durability.

Maximum Reverse Recovery Time: 0.035us

The fast reverse recovery time ensures efficient and quick switching, making it suitable for high-speed applications.

Maximum Reverse Current: 5uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Maximum Forward Voltage (VF): 0.89V

Low forward voltage drop results in less power dissipation and higher efficiency.

Technical Specifications

Diodes & Rectifiers SURS8320T3G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURS8320T3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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