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SURS8140T3G

Onsemi

SURS8140T3G by Onsemi

SURS8140T3G by Onsemi is a single diode with 0.075 us reverse recovery time and 5 uA reverse current. It is used in high voltage ultra fast recovery power applications, with a max operating temperature of 175 °C and peak reflow temperature of 260 °C.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2,500 parts In-Stock

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USA . 2,500 parts In-Stock

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Vyrian

USA . 522 parts In-Stock

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$0.690

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522

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Chip Stock

USA . 20,500 parts In-Stock

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USA . 2,500 parts In-Stock

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Digiode

USA . 1,507 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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$0.690

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120

$0.690

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Component Stockers USA

USA . 601 parts In-Stock

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$99.990

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601

$99.990

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 5,480 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,139 parts In-Stock

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SupplyDigital Components

Austria . 4,279 parts In-Stock

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TANS Electronics

Latvia . 3,532 parts In-Stock

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Corphita

USA . 2,138 parts In-Stock

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Kulean Microsystems

USA . 1,210 parts In-Stock

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UHIMA Technologies

Türkiye . 507 parts In-Stock

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iodParts Technologies Inc.

India . 475 parts In-Stock

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Kepictronics

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Overview

Discover the superior quality and reliability of the SURS8140T3G diode rectifier by Onsemi. With a focus on high voltage ultra-fast recovery power applications, this product offers unmatched performance and efficiency. Designed with precision and expertise, Onsemi ensures that customers receive a product that exceeds expectations. Whether you're in need of a fast and reliable solution for your electronic projects or industrial applications, the SURS8140T3G delivers exceptional value, benefits, and advantages that will take your projects to the next level. Experience the difference with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration makes it easier to integrate the diode into electronic circuits and devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient mounting on PCBs, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.075 us

Ultra-fast reverse recovery time ensures efficient operation and helps in minimizing power losses in the circuit.

Maximum Reverse Current: 5 uA

Low reverse current enables better efficiency and performance of the diode in different applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting of components.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed specifically for high voltage and ultra-fast recovery power applications, providing reliable performance in demanding environments.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for use in wide temperature conditions without compromising performance.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop results in minimal power dissipation and energy loss, making the diode efficient in converting AC to DC.

Technical Specifications

Diodes & Rectifiers SURS8140T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURS8140T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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