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SURS8260T3G

Onsemi

SURS8260T3G by Onsemi

SURS8260T3G by Onsemi is a single rectifier diode with 0.075us reverse recovery time and 5uA reverse current. It operates in high voltage ultra-fast power applications, offering 600V peak reverse voltage and 2A output current. The diode has a max forward voltage of 1.45V and can withstand temperatures from -65 to 175 °C.

Median Price

$0.204

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 163,075 parts In-Stock

1+ parts

-

100+ parts

$0.221

1k+ parts

$0.183

10k+ parts

$0.163

163,075

-

$0.221

$0.183

$0.163

Verical

USA . 162,500 parts In-Stock

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$0.204

162,500

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$0.204

DigiKey

USA . 15,000 parts In-Stock

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$0.120

15,000

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$0.120

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

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15,000

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Distributors (In-Stock)

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Greenchips

USA . 1,935 parts In-Stock

1+ parts

$0.169

100+ parts

$0.161

1k+ parts

$0.153

10k+ parts

$0.138

1,935

$0.169

$0.161

$0.153

$0.138

Vyrian

USA . 1,261 parts In-Stock

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$0.270

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1,261

$0.270

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Chip Stock

USA . 76,000 parts In-Stock

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Flip Electronics

USA . 15,000 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 1,935 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,333 parts In-Stock

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Bristol Electronics

USA . 1,333 parts In-Stock

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Dan-Mar Components

USA . 1,333 parts In-Stock

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Digiode

USA . 177 parts In-Stock

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Corohmni

South Africa . 84 parts In-Stock

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$0.270

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84

$0.270

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Component Stockers USA

USA . 6,678 parts In-Stock

1+ parts

$5.660

100+ parts

$5.380

1k+ parts

$5.210

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6,678

$5.660

$5.380

$5.210

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RC Electronics

USA . 82,777 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Perfect Parts

USA . 12,152 parts In-Stock

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Problanco Electronics

Mexico . 7,435 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,861 parts In-Stock

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TANS Electronics

Latvia . 4,696 parts In-Stock

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Kulean Microsystems

USA . 3,460 parts In-Stock

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iodParts Technologies Inc.

India . 1,333 parts In-Stock

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Corphita

USA . 884 parts In-Stock

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UHIMA Technologies

Türkiye . 74 parts In-Stock

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SupplyDigital Components

Austria . 66 parts In-Stock

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Overview

Discover the SURS8260T3G by Onsemi, a top-of-the-line rectifier diode designed for high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of 0.075 us and a maximum output current of 2A, this diode offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry known for their quality products, the SURS8260T3G is housed in a durable plastic/epoxy package with dual terminals for easy installation. Whether you're working on automotive electronics or industrial equipment, this diode provides the efficiency and precision you need to ensure optimal functionality. Trust Onsemi and elevate your projects with the superior capabilities of the SURS8260T3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.075 us

The ultra-fast reverse recovery time ensures efficient operation and minimal switching losses, making this diode ideal for high-speed applications.

Maximum Reverse Current: 5 uA

The low reverse current ensures minimal power loss and improved efficiency in the circuit.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range allows for reliable performance in a wide variety of environments.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high reverse voltage rating makes this diode suitable for high voltage applications, providing robust protection.

Technical Specifications

Diodes & Rectifiers SURS8260T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.45 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURS8260T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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