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SURS340T3G

Onsemi

SURS340T3G by Onsemi

SURS340T3G by Onsemi is a single rectifier diode with 400V peak reverse voltage and 4A output current. It has a fast recovery time of 0.075us and low reverse current of 10uA, suitable for high voltage power applications. The diode operates b/w -65 to 175 °C and meets AEC-Q101 standards, making it ideal for automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 565 parts In-Stock

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Digiode

USA . 228 parts In-Stock

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Kulean Microsystems

USA . 7,481 parts In-Stock

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SupplyDigital Components

Austria . 6,154 parts In-Stock

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TANS Electronics

Latvia . 5,229 parts In-Stock

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Corphita

USA . 1,574 parts In-Stock

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UHIMA Technologies

Türkiye . 863 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Problanco Electronics

Mexico . 65 parts In-Stock

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Overview

Experience the superior quality and reliability of the SURS340T3G by Onsemi, a leading manufacturer of diodes and rectifiers. Ideal for high voltage ultra-fast recovery power applications, this single-configured diode offers a maximum output current of 4 A and a maximum repetitive peak reverse voltage of 400 V. With a compact rectangular package style and dual-terminal position, this surface-mount diode provides unmatched performance in a wide range of electronic devices. Trust Onsemi to deliver cutting-edge technology and exceptional value with the SURS340T3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration simplifies the design and installation process, making it easier to implement in various applications.

Maximum Reverse Recovery Time: 0.075 us

Ultra-fast reverse recovery time allows for efficient and reliable switching operations, reducing power loss and improving overall performance.

Maximum Reverse Current: 10 uA

Low reverse current helps minimize power consumption and improves efficiency, making it a suitable choice for power-sensitive applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation, making it suitable for space-constrained applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage applications requiring ultra-fast recovery power, providing reliable performance in demanding environments.

Maximum Operating Temperature: 175 °C

High maximum operating temperature makes it suitable for use in a wide range of temperature conditions, enhancing its versatility.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability, making it a trusted choice for automotive and industrial applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is specifically designed for converting AC to DC power efficiently, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.28 V

Low forward voltage drop minimizes power loss and heat dissipation, improving energy efficiency and overall performance.

Maximum Output Current: 4 A

High maximum output current capability allows for handling higher power loads, making it suitable for a wide range of applications.

Terminal Form: J BEND

J bend terminal form makes it easy to solder and connect, ensuring secure and reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 400 V

High maximum repetitive peak reverse voltage provides robust protection against reverse voltage spikes, ensuring long-term reliability and durability.

Maximum Non-Repetitive Peak Forward Current: 75 A

High maximum non-repetitive peak forward current capability allows for handling high current surges, making it suitable for demanding applications.

Diode Element Material: SILICON

Silicon diode element material offers reliable and efficient performance, making it a common choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers SURS340T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.28 V

JESD-30 Code:

R-PDSO-J2

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURS340T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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