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SURS8105T3G

Onsemi

SURS8105T3G by Onsemi

SURS8105T3G by Onsemi is a single diode with 0.035 us reverse recovery time and 2 uA reverse current. It is used in high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C. The diode has a max forward voltage of 0.875 V and can handle up to 2 A output current.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 53,000 parts In-Stock

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Vyrian

USA . 6,359 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,800 parts In-Stock

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Bristol Electronics

USA . 1,480 parts In-Stock

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Digiode

USA . 403 parts In-Stock

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Ampacity Inc.

Singapore . 322 parts In-Stock

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$0.010

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322

$0.010

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AZTECH Wire

Italy . 181 parts In-Stock

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$11.040

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Kepictronics

USA . 72,540 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,767 parts In-Stock

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Problanco Electronics

Mexico . 3,483 parts In-Stock

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TANS Electronics

Latvia . 3,302 parts In-Stock

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Kulean Microsystems

USA . 3,157 parts In-Stock

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SupplyDigital Components

Austria . 1,500 parts In-Stock

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UHIMA Technologies

Türkiye . 918 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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Corphita

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Overview

Enhance your power applications with the SURS8105T3G by Onsemi. Manufactured with quality and precision, this rectifier diode offers high voltage ultra-fast recovery power capabilities. Designed for efficiency and reliability, this small outline package is ideal for various electronic devices. Experience minimal reverse current and maximum reverse recovery time, ensuring optimal performance in a wide range of temperatures. Trust Onsemi to deliver superior products that exceed expectations. Elevate your projects with the SURS8105T3G and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode and makes it durable for various environments.

Config: SINGLE

Simplifies the circuit design and installation process.

Surface Mount: YES

Allows for easy and efficient PCB installation.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast switching characteristics for high-speed applications.

Maximum Reverse Current: 2 uA

Low reverse current helps in reducing power losses.

Package Shape: RECTANGULAR

Provides easy placement and soldering onto PCBs.

No. of Terminals: 2

Simplifies the connection process.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Suitable for high voltage and fast recovery power applications.

Maximum Operating Temperature: 175 °C

Can operate reliably at high temperatures.

Minimum Operating Temperature: -65 °C

Can operate in a wide range of temperatures.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance.

Terminal Position: DUAL

Allows for flexibility in connection orientation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during installation.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications.

Maximum Forward Voltage (VF): 0.875 V

Low forward voltage drop reduces power dissipation.

Maximum Output Current: 2 A

Can handle moderate current loads.

Terminal Form: J BEND

Provides mechanical stability during installation.

Maximum Repetitive Peak Reverse Voltage: 50 V

Suitable for low to moderate voltage applications.

Maximum Non Repetitive Peak Forward Current: 40 A

Ability to handle high surge currents for short durations.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability in various applications.

Technical Specifications

Diodes & Rectifiers SURS8105T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURS8105T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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