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SURS8210T3G

Onsemi

SURS8210T3G by Onsemi

SURS8210T3G by Onsemi is a single diode with 0.03 us reverse recovery time and 2 uA reverse current. It is used in high voltage ultra fast recovery power applications, operating b/w -60 to 175 °C. The diode has a max forward voltage of 0.94 V and can handle up to 2 A output current.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,812 parts In-Stock

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Chip Stock

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Digiode

USA . 1,306 parts In-Stock

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Component Stockers USA

USA . 55 parts In-Stock

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$0.150

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AZTECH Wire

Italy . 1,073 parts In-Stock

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$9.390

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Kepictronics

USA . 72,540 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,396 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 2,847 parts In-Stock

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Corphita

USA . 1,289 parts In-Stock

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Problanco Electronics

Mexico . 1,270 parts In-Stock

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SupplyDigital Components

Austria . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 727 parts In-Stock

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TANS Electronics

Latvia . 266 parts In-Stock

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Corohmni

South Africa . 224 parts In-Stock

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Overview

Experience the superior quality of the SURS8210T3G diode rectifier by Onsemi, a trusted manufacturer known for its reliability and innovation. Ideal for high voltage ultra-fast recovery power applications, this single-configured surface mount diode offers customers exceptional value and benefits. With a maximum operating temperature of 175 °C and a maximum repetitive peak reverse voltage of 100V, this product is designed to deliver optimal performance and efficiency. Trust Onsemi to provide you with cutting-edge technology that meets your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protection for the diode, making it durable and reliable for various applications.

Config: SINGLE

Simplifies circuit design and installation, making it easier to use in different electronic devices.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and making it suitable for compact designs.

Maximum Reverse Recovery Time: 0.03 us

Offers fast switching speeds, reducing power loss and improving overall efficiency in high voltage applications.

Maximum Reverse Current: 2 uA

Ensures low leakage current, leading to improved performance and reliability of the diode.

Package Shape: RECTANGULAR

Facilitates easy integration into circuit layouts and ensures better heat dissipation for enhanced performance.

No. of Terminals: 2

Simplifies connection and installation, making it more user-friendly and versatile for different applications.

Package Style (Meter): SMALL OUTLINE

Provides a compact and space-saving design, ideal for applications where size is a critical factor.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage applications requiring fast recovery times, making it a reliable choice for power management.

Maximum Operating Temperature: 175 °C

Allows for operation in a wide temperature range, ensuring stability and performance in various environmental conditions.

Minimum Operating Temperature: -60 °C

Enables use in extreme cold conditions without compromising performance, offering versatility in different environments.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance, ensuring a reliable electrical connection for long-term use.

Terminal Position: DUAL

Offers flexibility in installation and circuit design, accommodating different connection configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for safe and efficient soldering processes, ensuring proper assembly and reliability of the diode.

Peak Reflow Temperature °C: 260

Designed to withstand high temperatures during soldering, ensuring the integrity of the diode during assembly.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability, making it suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, providing efficient conversion of AC to DC power in various circuits.

Maximum Forward Voltage (VF): 0.94 V

Offers low forward voltage drop, minimizing power loss and improving efficiency in circuit applications.

Maximum Output Current: 2 A

Provides high output current capacity, suitable for handling power requirements in various electronic devices.

Terminal Form: J BEND

Facilitates easy PCB mounting and ensures secure and reliable connection for optimal performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

Withstands high reverse voltages, making it suitable for applications requiring voltage regulation and protection.

Maximum Non Repetitive Peak Forward Current: 50 A

Handles high forward currents during transient conditions, ensuring reliability and protection in power circuits.

Diode Element Material: SILICON

Utilizes silicon for the diode element, providing high performance, reliability, and efficiency in power applications.

Technical Specifications

Diodes & Rectifiers SURS8210T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.94 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-60 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURS8210T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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