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SURS8360T3G-GA01

Onsemi

SURS8360T3G-GA01 by Onsemi

SURS8360T3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.075us reverse recovery time, and 10uA reverse current. Ideal for high voltage ultra-fast power applications, it operates b/w -65 to 175 °C with a max output current of 4A.

Median Price

$0.418

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 5,202 parts In-Stock

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NAC Semi

USA . 2,500 parts In-Stock

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$0.418

2,500

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$0.418

Digiode

USA . 1,899 parts In-Stock

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1,899

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 684 parts In-Stock

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$0.010

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684

$0.010

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Aztec Data Supply Inc.

USA . 2,695 parts In-Stock

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$0.110

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2,695

$0.110

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Semicontronic

India . 778 parts In-Stock

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$2.010

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$1.960

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$1.950

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778

$2.010

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$1.950

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AZTECH Wire

Italy . 761 parts In-Stock

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$15.939

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761

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QUARKTWIN TECHNOLOGY LTD

USA . 24,831 parts In-Stock

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Kulean Microsystems

USA . 7,995 parts In-Stock

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Continental Prestige Electronics

USA . 6,125 parts In-Stock

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Problanco Electronics

Mexico . 3,525 parts In-Stock

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Argo Parts USA

USA . 2,995 parts In-Stock

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TANS Electronics

Latvia . 2,929 parts In-Stock

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SupplyDigital Components

Austria . 1,449 parts In-Stock

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 70 parts In-Stock

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Overview

Unlock the power of precision with the SURS8360T3G-GA01 by Onsemi. Crafted with cutting-edge technology and premium materials, this rectifier diode offers unrivaled performance in high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of just 0.075 us and a maximum output current of 4A, this diode provides seamless operation and superior efficiency. Trust Onsemi's reputation for excellence and choose the SURS8360T3G-GA01 for all your power needs. Elevate your projects with reliability and innovation.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the diode, making it suitable for a variety of applications.

Config:

SINGLE - Simplifies circuit design and makes installation easier.

Surface Mount:

YES - Enables easy PCB assembly and saves space in the overall system design.

Maximum Reverse Recovery Time:

0.075 us - Ensures fast switching speed for efficient operation.

Maximum Reverse Current:

10 uA - Offers low leakage current for improved energy efficiency.

Package Shape:

RECTANGULAR - Allows for easy integration into existing circuit layouts.

Reverse Test Voltage:

600 V - Provides high voltage capability for demanding applications.

No. of Terminals:

2 - Simplifies connection to the circuit.

Package Style (Meter):

SMALL OUTLINE - Offers a compact size for efficient use of space in the circuit layout.

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER - Ideal for high voltage applications requiring fast recovery times.

Maximum Operating Temperature:

175 °C - Ensures reliable performance in a wide range of operating conditions.

Minimum Operating Temperature:

65 °C - Suitable for use in extreme temperature environments.

Terminal Position:

DUAL - Provides flexibility in connection options.

Minimum Breakdown Voltage:

600 V - Provides high voltage protection for the circuit.

Reference Standard:

AEC-Q101 - Complies with automotive industry standards for quality and reliability.

Diode Type:

RECTIFIER DIODE - Designed for rectification of AC to DC power conversion.

Maximum Forward Voltage (VF):

1.28 V - Ensures efficient power conversion with low voltage drop.

Maximum Output Current:

4 A - Capable of handling high current loads.

Terminal Form:

C BEND - Facilitates easy PCB mounting and soldering.

Maximum Repetitive Peak Reverse Voltage:

600 V - Provides protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current:

100 A - Handles high peak current transient conditions.

Diode Element Material:

SILICON - Known for its reliability and efficiency in power applications.

Technical Specifications

Diodes & Rectifiers SURS8360T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

600 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.28 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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