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MBR120VLSFT1G

Onsemi

MBR120VLSFT1G by Onsemi

MBR120VLSFT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.205 V and output current of 1 A. It operates b/w -65 to 125°C, making it suitable for applications requiring high-speed switching and low power loss in compact electronic devices. The diode's small outline package with matte tin finish enables easy surface mount installation in various electronic circuits.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

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Chip1Stop

Japan . 2,133 parts In-Stock

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$0.208

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Mouser Electronics

USA . 979 parts In-Stock

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Future Electronics

Canada . 177,000 parts In-Stock

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Arrow

USA . 93,000 parts In-Stock

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Verical

USA . 57,000 parts In-Stock

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EBV Elektronik

Germany . 54,000 parts In-Stock

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Farnell

UK . 48,000 parts In-Stock

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Element14

Singapore . 48,000 parts In-Stock

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Newark

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RS (Exports)

UK . 8,675 parts In-Stock

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Master Electronics

USA . 3,286 parts In-Stock

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EXC GmbH

Germany . 6,000 parts In-Stock

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Maritex

Poland . 88 parts In-Stock

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Digiode

USA . 2,366 parts In-Stock

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TME

Poland . 3,529 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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IBS Electronics

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NAC Semi

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Vyrian

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Component Sense

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Chip Stock

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ComSIT USA

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Cyclops Electronics Ltd

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Sensible Micro Corp

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Speed Components Ltd

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Flip Electronics

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ComSIT Distribution GmbH

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Classic Components Corporation

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Atlantic Semiconductor

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Modulus Dynamics

Lithuania . 4,701 parts In-Stock

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Semicontronic

India . 112,066 parts In-Stock

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Ampacity Inc.

Singapore . 98,844 parts In-Stock

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Corohmni

South Africa . 309 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Argo Parts USA

USA . 2,063 parts In-Stock

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$0.139

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Continental Prestige Electronics

USA . 1,982 parts In-Stock

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$0.143

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Aztec Data Supply Inc.

USA . 2,189 parts In-Stock

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Corphita

USA . 2,134 parts In-Stock

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GreenTree Electronics

Israel . 144,000 parts In-Stock

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RC Electronics

USA . 68,138 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

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Problanco Electronics

Mexico . 6,857 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,158 parts In-Stock

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Kulean Microsystems

USA . 5,924 parts In-Stock

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TANS Electronics

Latvia . 4,493 parts In-Stock

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iodParts Technologies Inc.

India . 3,165 parts In-Stock

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Robosynatics

Brazil . 3,071 parts In-Stock

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Lucentia Tech

USA . 3,071 parts In-Stock

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SupplyDigital Components

Austria . 3,001 parts In-Stock

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Futuretech Components

Singapore . 1,509 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 600 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 540 parts In-Stock

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UHIMA Technologies

Türkiye . 272 parts In-Stock

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Netroflash

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Ashlea Components Ltd (Excess)

UK . 5 parts In-Stock

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Overview

Experience top-notch quality and reliability with the MBR120VLSFT1G diode by Onsemi. As a leader in the industry, Onsemi ensures that their products are of the highest standard, providing unparalleled performance and durability. This Schottky rectifier diode is perfect for a wide range of applications, offering customers the benefits of low forward voltage, high output current, and exceptional efficiency. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations. Elevate your projects with the MBR120VLSFT1G diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, making it suitable for various operating environments.

Config: SINGLE

The single configuration simplifies the design and integration of the diode into electronic circuits.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to efficiently convert alternating current (AC) to direct current (DC), making it ideal for many electronic applications.

Maximum Forward Voltage (VF): 0.205 V

The low maximum forward voltage drop ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle moderate to high power applications with reliability.

Technology: SCHOTTKY

The Schottky technology used in this diode results in faster switching speeds and lower forward voltage drop, improving overall performance.

Maximum Repetitive Peak Reverse Voltage: 20 V

The high peak reverse voltage rating of 20 V ensures reliable performance and protection against reverse polarity.

Technical Specifications

Diodes & Rectifiers MBR120VLSFT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.205 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR120VLSFT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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