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NRVTS8100MFST3G

Onsemi

NRVTS8100MFST3G by Onsemi

NRVTS8100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 8A output current, and 0.73V forward voltage. It is used for efficiency applications in automotive industry due to AEC-Q101 standard compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,627 parts In-Stock

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Digiode

USA . 2,119 parts In-Stock

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Advanced Electronics

New Zealand . 915 parts In-Stock

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$0.063

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$0.063

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$0.060

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915

$0.063

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AZTECH Wire

Italy . 370 parts In-Stock

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$10.340

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Component Stockers USA

USA . 766 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,513 parts In-Stock

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Problanco Electronics

Mexico . 3,575 parts In-Stock

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Corphita

USA . 2,278 parts In-Stock

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TANS Electronics

Latvia . 1,838 parts In-Stock

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UHIMA Technologies

Türkiye . 863 parts In-Stock

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SupplyDigital Components

Austria . 531 parts In-Stock

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Corohmni

South Africa . 479 parts In-Stock

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Overview

Unlock the power of efficiency with the NRVTS8100MFST3G by Onsemi. This top-quality Schottky rectifier diode offers unparalleled performance, with a maximum output current of 8A and a maximum repetitive peak reverse voltage of 100V. Designed for maximum reliability, this diode is perfect for a wide range of applications where high efficiency is key. Trust in Onsemi's reputation for excellence and choose the NRVTS8100MFST3G for your next project. Elevate your performance and streamline your processes with this cutting-edge diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various operating environments.

Config: SINGLE

Simplifies the circuit design and installation process, reducing complexity and potential points of failure.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 70 uA

Ensures minimal power loss and efficient operation, contributing to energy savings in the overall system.

Package Shape: RECTANGULAR

Allows for space-efficient placement on the circuit board, optimizing board real estate and accommodating compact designs.

No. of Terminals: 5

Provides flexibility in connection options and supports multiple functions within the circuit.

Package Style (Meter): SMALL OUTLINE

Enhances thermal performance and promotes efficient heat dissipation, thus improving overall product reliability.

Application: EFFICIENCY

Designed for applications where high efficiency is critical, ensuring optimal performance and energy utilization.

Maximum Operating Temperature: 150 °C

Suitable for use in a wide range of temperature conditions, ensuring reliability and stability under varying environmental factors.

Minimum Operating Temperature: -55 °C

Maintains functionality even in extreme cold temperatures, making it suitable for diverse applications and environments.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a corrosion-resistant finish for long-term reliability and ensures consistent electrical contact.

Terminal Position: DUAL

Facilitates easy and secure connection to the circuit, enhancing overall stability and performance.

Case Connection: CATHODE

Ensures proper polarity and alignment during installation, preventing incorrect connections and potential damage to the product.

Maximum Time At Peak Reflow Temperature (s): 30

Supports efficient and reliable soldering processes during manufacturing, ensuring consistent quality and performance.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow soldering processes, enabling robust manufacturing and assembly.

Reference Standard: AEC-Q101

Meets automotive industry quality standards, ensuring reliability and performance in automotive applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, providing efficient and reliable conversion of alternating current to direct current.

Maximum Forward Voltage (VF): 0.73 V

Offers low voltage drop during forward conduction, minimizing power losses and enhancing efficiency.

Maximum Output Current: 8 A

Supports high current loads, making it suitable for power-hungry applications and devices.

Technology: SCHOTTKY

Utilizes Schottky technology for reduced switching losses and faster operation, improving overall efficiency and performance.

Terminal Form: FLAT

Ensures secure and stable connections to the circuit board, minimizing the risk of disconnection or intermittent contact.

Maximum Repetitive Peak Reverse Voltage: 100 V

Handles high reverse voltages without breakdown, making it suitable for a wide range of applications requiring reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 150 A

Capable of handling high surge currents, ensuring reliable operation under transient conditions and overloads.

Diode Element Material: SILICON

Utilizes silicon material for the diode element, offering high reliability, low leakage current, and stable performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers NRVTS8100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.73 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

70 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS8100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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