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NRVTS2H60ESFT1G

Onsemi

NRVTS2H60ESFT1G by Onsemi

NRVTS2H60ESFT1G by Onsemi is a Schottky rectifier diode with a max reverse current of 12uA and forward voltage of 0.65V. It operates b/w -65 to 175°C, ideal for efficiency applications in automotive electronics due to its AEC-Q101 compliance and high peak forward current capability of 50A.

Median Price

$0.101

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 297 parts In-Stock

1+ parts

$0.910

100+ parts

$0.396

1k+ parts

$0.181

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297

$0.910

$0.396

$0.181

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Future Electronics

Canada . 924,000 parts In-Stock

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$0.115

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$0.115

Avnet

USA . 54,000 parts In-Stock

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Arrow

USA . 18,000 parts In-Stock

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$0.091

18,000

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$0.091

Verical

USA . 18,000 parts In-Stock

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$0.091

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$0.091

Chip1Stop

Japan . 12,000 parts In-Stock

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$0.084

12,000

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$0.084

DigiKey

USA . 1,195 parts In-Stock

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$0.111

1,195

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$0.111

Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 768 parts In-Stock

1+ parts

$0.095

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768

$0.095

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Nova Conductors

Japan . 20 parts In-Stock

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$0.132

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20

$0.132

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Digiode

USA . 1,396 parts In-Stock

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$0.380

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1,396

$0.380

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Maritex

Poland . 4 parts In-Stock

1+ parts

$0.396

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$0.267

1k+ parts

$0.162

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$0.138

4

$0.396

$0.267

$0.162

$0.138

NAC Semi

USA . 570,000 parts In-Stock

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$0.244

570,000

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$0.244

Bristol Electronics

USA . 125,999 parts In-Stock

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Chip Stock

USA . 33,500 parts In-Stock

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Vyrian

USA . 26,893 parts In-Stock

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Sensible Micro Corp

USA . 8,503 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 23,086 parts In-Stock

1+ parts

$0.071

100+ parts

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23,086

$0.071

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Semicontronic

India . 22,164 parts In-Stock

1+ parts

$0.071

100+ parts

$0.069

1k+ parts

$0.069

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22,164

$0.071

$0.069

$0.069

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Corohmni

South Africa . 382 parts In-Stock

1+ parts

$0.084

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382

$0.084

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.084

100+ parts

$0.080

1k+ parts

$0.080

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10

$0.084

$0.080

$0.080

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Aztec Data Supply Inc.

USA . 299 parts In-Stock

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$0.110

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299

$0.110

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Continental Prestige Electronics

USA . 6,440 parts In-Stock

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$0.132

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$0.129

6,440

$0.132

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$0.129

Argo Parts USA

USA . 2,599 parts In-Stock

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$0.132

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$0.128

2,599

$0.132

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$0.128

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.132

100+ parts

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$0.125

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$0.122

2,000

$0.132

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$0.125

$0.122

Corphita

USA . 783 parts In-Stock

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$0.360

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$0.360

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 18,884 parts In-Stock

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Futuretech Components

Singapore . 12,000 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 4,036 parts In-Stock

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Problanco Electronics

Mexico . 2,461 parts In-Stock

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Kulean Microsystems

USA . 1,509 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 966 parts In-Stock

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UHIMA Technologies

Türkiye . 523 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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Formix International (Excess)

India . 249 parts In-Stock

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Overview

Discover the NRVTS2H60ESFT1G by Onsemi, a cutting-edge Schottky rectifier diode that offers superior efficiency and reliability. Manufactured by Onsemi, a trusted industry leader, this diode is designed for high-performance applications with a maximum output current of 2A and a maximum repetitive peak reverse voltage of 60V. The small outline package body material ensures easy installation, while the matte tin terminal finish guarantees lasting durability. Trust Onsemi to deliver top-quality components for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers good insulation properties and protects the internal components from moisture and physical damage.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 12 uA

Provides low leakage current for energy-efficient operation and improved performance.

Package Shape: RECTANGULAR

Facilitates easy handling and installation in various electronic applications.

Maximum Operating Temperature: 175 °C

Ensures reliable performance in a wide range of operating conditions.

Maximum Forward Voltage (VF): 0.65 V

Provides efficient power conversion with low voltage drop.

Technology: SCHOTTKY

Offers fast switching speeds and lower forward voltage drop compared to standard diodes.

Technical Specifications

Diodes & Rectifiers NRVTS2H60ESFT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

12 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS2H60ESFT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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