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NRVTSA4100T3G-GA01

Onsemi

NRVTSA4100T3G-GA01 by Onsemi

NRVTSA4100T3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 4A max output current, and 0.66V max forward voltage. Ideal for efficiency applications with AEC-Q101 standard compliance.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 53,000 parts In-Stock

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Vyrian

USA . 2,792 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Digiode

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Aztec Data Supply Inc.

USA . 1,454 parts In-Stock

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$0.050

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$0.050

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.145

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$0.138

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$0.138

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Ampacity Inc.

Singapore . 1,210 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 427 parts In-Stock

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$3.010

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$2.935

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$2.920

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427

$3.010

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AZTECH Wire

Italy . 210 parts In-Stock

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$16.333

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Continental Prestige Electronics

USA . 6,155 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 2,557 parts In-Stock

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Corphita

USA . 2,349 parts In-Stock

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TANS Electronics

Latvia . 1,828 parts In-Stock

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Problanco Electronics

Mexico . 1,562 parts In-Stock

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SupplyDigital Components

Austria . 1,151 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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Argo Parts USA

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Robosynatics

Brazil . 250 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Corohmni

South Africa . 151 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 49 parts In-Stock

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Overview

Discover the NRVTSA4100T3G-GA01 by Onsemi, a top-notch diode rectifier that boasts superior quality and reliability. As a leading manufacturer in the industry, Onsemi ensures that this product delivers exceptional performance in various efficiency applications. With a maximum reverse voltage of 100V and a maximum output current of 4A, this Schottky diode offers unmatched value and benefits to customers. Say goodbye to inefficiency and hello to enhanced productivity with the NRVTSA4100T3G-GA01!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it a reliable choice for various applications.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Reverse Current: 25 uA

Ensures minimal leakage current, improving efficiency and performance.

Minimum Operating Temperature: -55 °C

Can operate in extreme low temperature environments, expanding the range of applications.

Diode Type: RECTIFIER DIODE

Suitable for rectifying alternating current (AC) to direct current (DC), making it versatile for conversion applications.

Technology: SCHOTTKY

Provides lower forward voltage drop and faster switching speed compared to standard silicon diodes, enhancing efficiency and performance.

Technical Specifications

Diodes & Rectifiers NRVTSA4100T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

25 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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