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NRVTSAF5100ET3G

Onsemi

NRVTSAF5100ET3G by Onsemi

NRVTSAF5100ET3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.69V and output current of 5A. It operates b/w -55°C to 175°C, making it suitable for high-efficiency applications. With a max reverse voltage of 100V and non-repetitive peak forward current of 50A, it offers reliable performance in various electronic circuits.

Median Price

$0.866

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3 parts In-Stock

1+ parts

$0.711

100+ parts

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3

$0.711

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Element14

Singapore . 4,437 parts In-Stock

1+ parts

-

100+ parts

$1.020

1k+ parts

$0.829

10k+ parts

$0.767

4,437

-

$1.020

$0.829

$0.767

Distributors (In-Stock)

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Digiode

USA . 520 parts In-Stock

1+ parts

$0.512

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520

$0.512

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Flip Electronics

USA . 600,000 parts In-Stock

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600,000

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Chip Stock

USA . 85,700 parts In-Stock

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85,700

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ComSIT Distribution GmbH

Germany . 3,680 parts In-Stock

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3,680

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Vyrian

USA . 2,044 parts In-Stock

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2,044

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 379 parts In-Stock

1+ parts

$0.140

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379

$0.140

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Corphita

USA . 2,399 parts In-Stock

1+ parts

$0.485

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2,399

$0.485

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Corohmni

South Africa . 133 parts In-Stock

1+ parts

$0.539

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133

$0.539

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Ampacity Inc.

Singapore . 2,121 parts In-Stock

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$0.600

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2,121

$0.600

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Semicontronic

India . 1,940 parts In-Stock

1+ parts

$0.600

100+ parts

$0.585

1k+ parts

$0.582

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-

1,940

$0.600

$0.585

$0.582

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AZTECH Wire

Italy . 50 parts In-Stock

1+ parts

$15.990

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50

$15.990

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TANS Electronics

Latvia . 7,837 parts In-Stock

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7,837

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SupplyDigital Components

Austria . 7,635 parts In-Stock

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Continental Prestige Electronics

USA . 6,557 parts In-Stock

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Lixinc

USA . 5,687 parts In-Stock

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5,687

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Problanco Electronics

Mexico . 5,466 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,080 parts In-Stock

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3,080

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Kulean Microsystems

USA . 1,505 parts In-Stock

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1,505

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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925

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Advanced Electronics

New Zealand . 750 parts In-Stock

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750

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Experience the power of efficiency with the NRVTSAF5100ET3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that deliver exceptional performance. This Schottky rectifier diode is designed for applications where high efficiency is key, offering a maximum output current of 5A and a maximum repetitive peak reverse voltage of 100V. With a small outline package style and dual terminals, this diode is ideal for a wide range of electronic devices. Trust Onsemi to provide you with reliable solutions that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection from environmental factors and offers durability.

Config: SINGLE

Simple configuration makes it easy to use and integrate into circuits.

Surface Mount: YES

Enables easy placement and soldering onto circuit boards.

Maximum Reverse Current: 9 uA

Low reverse current minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Compact shape allows for space-efficient placement in electronic devices.

No. of Terminals: 2

Simple 2-terminal design for easy connection and integration.

Package Style (Meter): SMALL OUTLINE

Small outline design saves space and allows for high-density circuit layouts.

Application: EFFICIENCY

Designed for high efficiency applications, ideal for power management solutions.

Maximum Operating Temperature: 175 °C

Wide temperature range for versatile use in various environments.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures without issues.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a durable and reliable terminal finish for secure connections.

Terminal Position: DUAL

Dual terminal position allows for multiple connection options and flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for quick and efficient soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure solder joints for long-term reliability.

Reference Standard: AEC-Q101

Compliance with automotive industry standards ensures high quality and reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode design for efficient current conversion in electronic circuits.

Maximum Forward Voltage (VF): 0.69 V

Low forward voltage drop for energy-efficient operation.

Maximum Output Current: 5 A

High output current for powering a wide range of electronic devices and components.

Technology: SCHOTTKY

Schottky technology for fast switching speeds and low power loss.

Terminal Form: FLAT

Flat terminal design for easy soldering and secure connections.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating for use in a variety of applications.

Maximum Non Repetitive Peak Forward Current: 50 A

High non-repetitive peak forward current for surge protection and stability.

Diode Element Material: SILICON

Silicon diode element for reliable and consistent performance.

Technical Specifications

Diodes & Rectifiers NRVTSAF5100ET3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.69 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

9 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTSAF5100ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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