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NRVTS560EMFST1G

Onsemi

NRVTS560EMFST1G by Onsemi

NRVTS560EMFST1G by Onsemi is a Schottky rectifier diode with a max reverse current of 30uA and forward voltage of 0.61V. It operates b/w -55 to 175°C, making it suitable for efficiency applications. This diode has a max repetitive peak reverse voltage of 60V and can handle non-repetitive peak forward currents up to 150A.

Median Price

$0.396

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 243 parts In-Stock

1+ parts

$0.396

100+ parts

$0.323

1k+ parts

$0.266

10k+ parts

-

243

$0.396

$0.323

$0.266

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Arrow

USA . 817 parts In-Stock

1+ parts

$0.506

100+ parts

$0.301

1k+ parts

$0.162

10k+ parts

$0.162

817

$0.506

$0.301

$0.162

$0.162

Chip1Stop

Japan . 777 parts In-Stock

1+ parts

$1.760

100+ parts

$0.513

1k+ parts

$0.382

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777

$1.760

$0.513

$0.382

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Avnet

USA . 22,500 parts In-Stock

1+ parts

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22,500

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Verical

USA . 817 parts In-Stock

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-

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$0.301

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$0.162

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$0.162

817

-

$0.301

$0.162

$0.162

Farnell

UK . 243 parts In-Stock

1+ parts

-

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$0.225

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$0.222

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243

-

$0.225

$0.222

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.283

100+ parts

-

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50

$0.283

-

-

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Digiode

USA . 2,283 parts In-Stock

1+ parts

$0.481

100+ parts

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2,283

$0.481

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Chip Stock

USA . 159,500 parts In-Stock

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159,500

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Cyclops Electronics Ltd

UK . 93,750 parts In-Stock

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93,750

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Netsource Technology, Inc.

USA . 28,515 parts In-Stock

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28,515

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Bristol Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.492

1k+ parts

$0.367

10k+ parts

$0.341

6,000

-

$0.492

$0.367

$0.341

Vyrian

USA . 5,408 parts In-Stock

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5,408

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 530 parts In-Stock

1+ parts

$0.060

100+ parts

-

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530

$0.060

-

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Ampacity Inc.

Singapore . 4,953 parts In-Stock

1+ parts

$0.256

100+ parts

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4,953

$0.256

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Corohmni

South Africa . 215 parts In-Stock

1+ parts

$0.272

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215

$0.272

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.278

100+ parts

-

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$0.267

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500

$0.278

-

$0.267

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Argo Parts USA

USA . 499 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

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10k+ parts

$0.275

499

$0.283

-

-

$0.275

Corphita

USA . 747 parts In-Stock

1+ parts

$0.455

100+ parts

-

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747

$0.455

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Continental Prestige Electronics

USA . 5,610 parts In-Stock

1+ parts

$0.520

100+ parts

$0.284

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5,610

$0.520

$0.284

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Microchip USA

USA . 2,927 parts In-Stock

1+ parts

$1.300

100+ parts

$1.300

1k+ parts

$1.290

10k+ parts

$1.290

2,927

$1.300

$1.300

$1.290

$1.290

AZTECH Wire

Italy . 984 parts In-Stock

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$13.700

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984

$13.700

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ChipstoGo Electronic ltd

UK . 94,182 parts In-Stock

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Futuretech Components

Singapore . 30,000 parts In-Stock

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GreenTree Electronics

Israel . 18,500 parts In-Stock

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Lixinc

USA . 11,662 parts In-Stock

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Infinite Electronics LLP (Excess)

. 5,584 parts In-Stock

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5,584

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,857 parts In-Stock

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SupplyDigital Components

Austria . 4,138 parts In-Stock

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Problanco Electronics

Mexico . 3,018 parts In-Stock

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TANS Electronics

Latvia . 1,126 parts In-Stock

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Kulean Microsystems

USA . 771 parts In-Stock

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771

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UHIMA Technologies

Türkiye . 671 parts In-Stock

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671

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Overview

Unlock the power of efficiency with the Onsemi NRVTS560EMFST1G diode. Manufactured by a trusted industry leader, this Schottky rectifier diode offers unparalleled quality and reliability for a wide range of applications. With a maximum output current of 5A and a maximum forward voltage of 0.61V, this diode provides exceptional performance in a compact, easy-to-mount package. Whether you're looking to improve the efficiency of your power supply or enhance the performance of your electronics, the NRVTS560EMFST1G is the perfect solution. Upgrade your systems today and experience the benefits of advanced technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable package for the diode, making it suitable for various applications.

Config: SINGLE

Simplified circuit design with only one diode in the package.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 30 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Offers a standard shape for easy integration into existing designs and layouts.

No. of Terminals: 5

Provides ample connectivity options for versatile circuit connections.

Package Style: SMALL OUTLINE

Compact design suitable for space-constrained applications.

Application: EFFICIENCY

Designed for high efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments, increasing the diode's reliability.

Minimum Operating Temperature: -55 °C

Operates efficiently in low-temperature environments as well.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and corrosion-resistant terminal finish for long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexible installation and connection options.

Case Connection: CATHODE

Clearly identifies the cathode connection for proper circuit configuration.

Maximum Time At Peak Reflow Temperature (s): 30

Allows sufficient time for reflow soldering during assembly.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during the assembly process.

Reference Standard: AEC-Q101

Complies with automotive electronic component quality standards for reliability and performance.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.61 V

Low forward voltage drop results in minimal power dissipation and energy loss.

Maximum Output Current: 5 A

Capable of handling high output currents for various power applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speed and low voltage drop, ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminal design provides stable and secure connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 60 V

Handles high reverse voltage spikes with ease, protecting the circuit from damage.

Maximum Non Repetitive Peak Forward Current: 150 A

Can withstand high forward current surges without damage, ensuring reliability under transient conditions.

Diode Element Material: SILICON

Silicon diode element offers high efficiency and reliability for various applications.

Technical Specifications

Diodes & Rectifiers NRVTS560EMFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.61 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

30 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS560EMFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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