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NRVTSA4100T3G

Onsemi

NRVTSA4100T3G by Onsemi

NRVTSA4100T3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage and 4A output current. It operates b/w -55°C to 150°C, making it ideal for high-efficiency applications. This single-config diode comes in a small outline package suitable for surface mount assembly.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 9,842 parts In-Stock

1+ parts

$1.850

100+ parts

$0.549

1k+ parts

$0.354

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9,842

$1.850

$0.549

$0.354

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Arrow

USA . 35,000 parts In-Stock

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$0.157

35,000

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$0.157

Verical

USA . 35,000 parts In-Stock

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$0.157

35,000

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$0.157

DigiKey

USA . 5,000 parts In-Stock

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$0.470

5,000

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$0.470

Farnell

UK . 2,725 parts In-Stock

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$0.310

1k+ parts

$0.186

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2,725

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$0.310

$0.186

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Distributors (In-Stock)

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Digiode

USA . 749 parts In-Stock

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$0.779

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749

$0.779

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Nova Conductors

Japan . 44 parts In-Stock

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$1.000

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44

$1.000

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Classic Components Corporation

USA . 75,679 parts In-Stock

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Chip Stock

USA . 17,100 parts In-Stock

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Flip Electronics

USA . 5,000 parts In-Stock

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Vyrian

USA . 3,210 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,461 parts In-Stock

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ComSIT USA

USA . 2,461 parts In-Stock

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Sunrise Surplus Inc.

USA . 17 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,747 parts In-Stock

1+ parts

$0.133

100+ parts

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11,747

$0.133

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Decca Corp

Germany . 11,612 parts In-Stock

1+ parts

$0.133

100+ parts

$0.130

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$0.129

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11,612

$0.133

$0.130

$0.129

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Semicontronic

India . 11,464 parts In-Stock

1+ parts

$0.133

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$0.130

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$0.129

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11,464

$0.133

$0.130

$0.129

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Aztec Data Supply Inc.

USA . 4,020 parts In-Stock

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$0.140

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4,020

$0.140

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Corohmni

South Africa . 370 parts In-Stock

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$0.157

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370

$0.157

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Continental Prestige Electronics

USA . 5,682 parts In-Stock

1+ parts

$0.231

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$0.227

5,682

$0.231

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$0.227

Argo Parts USA

USA . 4,143 parts In-Stock

1+ parts

$0.231

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$0.224

4,143

$0.231

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$0.224

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.238

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$0.226

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$0.226

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450

$0.238

$0.226

$0.226

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Component Stockers USA

USA . 244 parts In-Stock

1+ parts

$0.530

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$0.310

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244

$0.530

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Corphita

USA . 590 parts In-Stock

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$0.738

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590

$0.738

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Lixinc

USA . 18,168 parts In-Stock

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Perfect Parts

USA . 16,787 parts In-Stock

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RC Electronics

USA . 15,969 parts In-Stock

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$2.200

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$2.100

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15,969

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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iodParts Technologies Inc.

India . 5,587 parts In-Stock

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TANS Electronics

Latvia . 5,189 parts In-Stock

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Kulean Microsystems

USA . 4,601 parts In-Stock

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Problanco Electronics

Mexico . 4,208 parts In-Stock

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SupplyDigital Components

Austria . 1,713 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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$1.355

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$1.355

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$1.355

950

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$1.355

$1.355

$1.355

Lucentia Tech

USA . 950 parts In-Stock

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$1.355

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$1.355

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$1.355

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$1.355

$1.355

$1.355

UHIMA Technologies

Türkiye . 594 parts In-Stock

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594

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Bastille Electronics

Australia . 500 parts In-Stock

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Modulus Dynamics

Lithuania . 73 parts In-Stock

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Overview

Experience unmatched efficiency and reliability with the NRVTSA4100T3G by Onsemi. As a leading manufacturer in diodes & rectifiers, Onsemi delivers top-quality products that exceed industry standards. This Schottky rectifier diode is designed for applications where performance matters most, offering a maximum output current of 4A and a maximum reverse voltage of 100V. With its small outline package style and dual terminal position, this diode guarantees optimal functionality in a compact design. Trust Onsemi to provide you with the best solutions for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, making it suitable for various applications.

Configuration: SINGLE

Simplified design and easy to use for straightforward circuit applications.

Surface Mount: YES

Easily mountable on circuit boards, saving space and enhancing efficiency.

Maximum Reverse Current: 25 uA

Low reverse current ensures minimal power loss and improved overall efficiency.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching capabilities, ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various operating environments.

Minimum Operating Temperature: -55 °C

Can operate in extremely low temperatures, making it versatile for different conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable connection and good solderability, ensuring stable performance.

Maximum Output Current: 4 A

Capable of handling high output currents, suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltages, offering protection to the circuit.

Technical Specifications

Diodes & Rectifiers NRVTSA4100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

25 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTSA4100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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