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NRVTS2H60ESFT3G

Onsemi

NRVTS2H60ESFT3G by Onsemi

NRVTS2H60ESFT3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage and 2A output current. It operates b/w -65°C to 175°C, with a max forward voltage of 0.65V. Ideal for efficiency applications, it features a small outline package and matte tin terminals for surface mount assembly.

Median Price

$0.234

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 11,017 parts In-Stock

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$0.630

100+ parts

$0.248

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$0.187

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11,017

$0.630

$0.248

$0.187

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Arrow

USA . 10,000 parts In-Stock

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$0.304

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$0.304

Verical

USA . 10,000 parts In-Stock

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$0.095

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$0.095

Farnell

UK . 3,450 parts In-Stock

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$0.164

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$0.095

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$0.092

3,450

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$0.164

$0.095

$0.092

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.144

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$0.144

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Digiode

USA . 2,091 parts In-Stock

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$0.418

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$0.418

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IBS Electronics

USA . 30,000 parts In-Stock

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$0.146

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$0.146

Chip Stock

USA . 11,500 parts In-Stock

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Vyrian

USA . 11,436 parts In-Stock

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Sensible Micro Corp

USA . 7,976 parts In-Stock

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7,976

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Cyclops Electronics Ltd

UK . 2,374 parts In-Stock

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ComSIT Distribution GmbH

Germany . 113 parts In-Stock

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Greenchips

USA . 100 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,920 parts In-Stock

1+ parts

$0.110

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$0.110

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Semicontronic

India . 11,564 parts In-Stock

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$0.139

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$0.136

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$0.135

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11,564

$0.139

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$0.135

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Ampacity Inc.

Singapore . 11,483 parts In-Stock

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$0.139

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$0.139

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Corohmni

South Africa . 409 parts In-Stock

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$0.141

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409

$0.141

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Continental Prestige Electronics

USA . 5,173 parts In-Stock

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$0.144

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$0.141

5,173

$0.144

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$0.141

Argo Parts USA

USA . 1,005 parts In-Stock

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$0.144

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$0.140

1,005

$0.144

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$0.140

Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.157

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$0.149

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$0.149

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$0.157

$0.149

$0.149

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Corphita

USA . 1,172 parts In-Stock

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$0.396

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Futuretech Components

Singapore . 9,000 parts In-Stock

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SupplyDigital Components

Austria . 8,032 parts In-Stock

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Kulean Microsystems

USA . 7,323 parts In-Stock

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Problanco Electronics

Mexico . 6,532 parts In-Stock

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TANS Electronics

Latvia . 1,427 parts In-Stock

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Lixinc

USA . 905 parts In-Stock

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NRVTS2H60ESFT3G diode. This small outline rectifier diode offers unmatched efficiency in a wide range of applications. With a maximum output current of 2A and a maximum reverse voltage of 60V, this Schottky technology diode is designed to provide optimal performance under extreme conditions. Trust Onsemi for high-quality components that deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight packaging for the diode, making it suitable for a wide range of applications.

Config: SINGLE

Simplified configuration makes it easy to integrate into circuit designs.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs.

Maximum Reverse Current: 12 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Space-efficient shape for compact designs.

No. of Terminals: 2

Simplified connection interface for easy installation.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on the PCB.

Application: EFFICIENCY

Designed for efficient performance in various applications.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments.

Minimum Operating Temperature: -65 °C

Suitable for use in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable terminal finish for long-term use.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly process.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes.

Reference Standard: AEC-Q101

Compliant with automotive electronics quality standards.

Diode Type: RECTIFIER DIODE

Designed for rectification applications in electronic circuits.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop for efficient operation.

Maximum Output Current: 2 A

Capable of handling high output currents for various applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop.

Terminal Form: FLAT

Flat terminals for easy soldering and secure connections.

Maximum Repetitive Peak Reverse Voltage: 60 V

Withstands high reverse voltages for reliable operation.

Maximum Non Repetitive Peak Forward Current: 50 A

Capable of handling high peak forward currents for transient overloads.

Diode Element Material: SILICON

Silicon diode element offers high reliability and performance.

Technical Specifications

Diodes & Rectifiers NRVTS2H60ESFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

12 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS2H60ESFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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