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NRVTS1060PFST3G

Onsemi

NRVTS1060PFST3G by Onsemi

NRVTS1060PFST3G by Onsemi is a Schottky rectifier diode with 60V reverse test voltage, 10A max output current, and 0.66V max forward voltage. Ideal for applications requiring high efficiency power conversion in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.955

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10 parts In-Stock

1+ parts

$0.950

100+ parts

$0.558

1k+ parts

$0.369

10k+ parts

$0.345

10

$0.950

$0.558

$0.369

$0.345

DigiKey

USA . 507 parts In-Stock

1+ parts

$0.960

100+ parts

$0.558

1k+ parts

$0.391

10k+ parts

$0.328

507

$0.960

$0.558

$0.391

$0.328

Flip Electronics (Authorized)

USA . 6,346 parts In-Stock

1+ parts

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6,346

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Distributors (In-Stock)

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Digiode

USA . 1,021 parts In-Stock

1+ parts

$0.864

100+ parts

-

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1,021

$0.864

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Vyrian

USA . 680 parts In-Stock

1+ parts

$0.910

100+ parts

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680

$0.910

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Flip Electronics

USA . 6,346 parts In-Stock

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6,346

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,134 parts In-Stock

1+ parts

$0.819

100+ parts

-

1k+ parts

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1,134

$0.819

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Corohmni

South Africa . 339 parts In-Stock

1+ parts

$0.910

100+ parts

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339

$0.910

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Problanco Electronics

Mexico . 8,370 parts In-Stock

1+ parts

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8,370

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Kulean Microsystems

USA . 7,796 parts In-Stock

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7,796

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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TANS Electronics

Latvia . 4,957 parts In-Stock

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4,957

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SupplyDigital Components

Austria . 4,131 parts In-Stock

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4,131

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UHIMA Technologies

Türkiye . 180 parts In-Stock

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180

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Overview

Discover the NRVTS1060PFST3G by Onsemi - a high-quality rectifier diode designed to deliver reliable performance in various applications. Manufactured by Onsemi, a trusted name in the industry, this diode offers superior efficiency and durability. With a maximum output current of 10A and a maximum reverse voltage of 60V, this Schottky diode is ideal for a wide range of projects. Whether you're working on automotive electronics or power supplies, this diode's small outline package and dual terminal position make it easy to integrate into your design. Trust in Onsemi's reputation for excellence and choose the NRVTS1060PFST3G for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, ideal for various applications.

Config: SINGLE

The single configuration simplifies the setup and use of this diode, reducing complexity and potential points of failure.

Surface Mount: YES

Being surface mountable, this diode can be easily integrated into circuit boards, saving space and facilitating automated assembly processes.

Maximum Reverse Current: 350 uA

With a low maximum reverse current, this diode offers efficient operation and helps prevent unnecessary power loss.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and secure mounting within electronic devices or circuits.

Reverse Test Voltage: 60 V

The high reverse test voltage ensures that this diode can withstand voltage spikes or reverse polarity without damage.

No. of Terminals: 3

Having three terminals allows for flexibility in circuit connections and ensures proper alignment during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact designs.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows this diode to function reliably in cold environments or during temperature fluctuations.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and facilitate proper connection in various applications.

Case Connection: CATHODE

The cathode case connection simplifies circuit design and ensures correct polarity during installation.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this diode suitable for automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC power to DC, making it essential for power supply and conversion circuits.

Maximum Forward Voltage (VF): 0.66 V

The low maximum forward voltage drop minimizes power loss and enhances the efficiency of the circuit where this diode is used.

Maximum Output Current: 10 A

With a high maximum output current capacity, this diode can handle high power loads without overheating or failure.

Technology: SCHOTTKY

Featuring Schottky technology, this diode offers fast switching speeds and low forward voltage drop, suitable for high-frequency applications.

Terminal Form: FLAT

The flat terminal form ensures secure connections and easy soldering during assembly, enhancing reliability and manufacturability.

Maximum Repetitive Peak Reverse Voltage: 60 V

With a high maximum repetitive peak reverse voltage, this diode can handle voltage spikes or reverse polarity events repeatedly without damage.

Maximum Non Repetitive Peak Forward Current: 150 A

The high maximum non-repetitive peak forward current rating allows this diode to withstand short-duration high-current pulses without failure.

Diode Element Material: SILICON

Made of high-quality silicon, the diode element in this product ensures reliable performance and longevity in various operating conditions.

Technical Specifications

Diodes & Rectifiers NRVTS1060PFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

350 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVTS1060PFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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