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NRVTSA4100ET3G-GA01

Onsemi

NRVTSA4100ET3G-GA01 by Onsemi

NRVTSA4100ET3G-GA01 by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward current of 4A. It operates b/w -55°C to 175°C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and complies with AEC-Q101 standards.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 36,000 parts In-Stock

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Vyrian

USA . 5,246 parts In-Stock

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Digiode

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Nova Conductors

Japan . 84 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,261 parts In-Stock

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$0.090

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$0.090

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.202

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$0.192

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$0.192

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$0.202

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$0.192

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Ampacity Inc.

Singapore . 466 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 400 parts In-Stock

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$2.010

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$1.960

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$1.950

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$2.010

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$1.950

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AZTECH Wire

Italy . 587 parts In-Stock

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$9.981

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Continental Prestige Electronics

USA . 5,074 parts In-Stock

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Problanco Electronics

Mexico . 5,026 parts In-Stock

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TANS Electronics

Latvia . 4,092 parts In-Stock

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SupplyDigital Components

Austria . 3,697 parts In-Stock

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Kulean Microsystems

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Robosynatics

Brazil . 2,190 parts In-Stock

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Lucentia Tech

USA . 2,190 parts In-Stock

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Corphita

USA . 1,482 parts In-Stock

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Argo Parts USA

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Microchip USA

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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Modulus Dynamics

Lithuania . 750 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Bastille Electronics

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Overview

Unlock the power of efficiency with the NRVTSA4100ET3G-GA01 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This rectangular single diode offers a maximum reverse test voltage of 100V, making it ideal for a wide range of applications. With a maximum output current of 4A and a low forward voltage of 0.68V, this rectifier diode provides excellent performance while maintaining high efficiency. Trust Onsemi to deliver value and innovation with the NRVTSA4100ET3G-GA01.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides efficient protection for the diode, ensuring durability and longevity in various environments.

Config: SINGLE

Single configuration simplifies installation and circuit design, making it user-friendly for various applications.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto circuit boards, saving space and simplifying assembly.

Maximum Reverse Current: 29 uA

Low reverse current minimizes power loss and enhances efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and positioning within electronic systems for optimal performance.

Reverse Test Voltage: 100 V

High reverse test voltage rating ensures reliable performance and protection against reverse voltage conditions.

No. of Terminals: 2

Dual terminals provide simple connectivity and enable easy integration into the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space, making it suitable for compact electronic devices and applications.

Application: EFFICIENCY

Optimized for efficiency, this diode is ideal for applications where energy conservation is crucial.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in various temperature conditions.

Minimum Operating Temperature: -55 °C

Wide range of operating temperatures allows for versatile use in different environmental conditions.

Terminal Position: DUAL

Dual terminal positioning enables flexible installation and connectivity options in the circuit.

Minimum Breakdown Voltage: 100 V

High minimum breakdown voltage provides protection against voltage spikes and ensures safe operation.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability, making it suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC currents efficiently, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.68 V

Low forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 4 A

High maximum output current capacity allows for handling higher currents in the circuit.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, enhancing overall performance.

Terminal Form: C BEND

C bend terminal form provides secure and reliable connections for consistent performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage rating ensures sustained protection against reverse voltage conditions.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current capacity allows for handling transient current surges without damage.

Diode Element Material: SILICON

Silicon diode element material provides consistent and reliable performance in a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NRVTSA4100ET3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

29 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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