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NRVTSA3100ET3G-GA01

Onsemi

NRVTSA3100ET3G-GA01 by Onsemi

NRVTSA3100ET3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 3A max output current, and 0.995V max forward voltage. It is ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance and -55 to 175 °C operating temperature range.

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Chip Stock

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Digiode

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Nova Conductors

Japan . 100 parts In-Stock

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Semicontronic

India . 1,602 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,849 parts In-Stock

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Ampacity Inc.

Singapore . 1,626 parts In-Stock

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AZTECH Wire

Italy . 781 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Continental Prestige Electronics

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SupplyDigital Components

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Overview

Boost the efficiency of your electronic devices with the NRVTSA3100ET3G-GA01 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality diodes and rectifiers that are perfect for a wide range of applications. The NRVTSA3100ET3G-GA01 offers customers high value and benefits, with a maximum reverse current of 5 uA and a maximum operating temperature of 175 °C. Say goodbye to inefficiency and hello to superior performance with this Schottky technology diode. Experience the advantages of Onsemi products today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it a reliable choice.

Config: SINGLE

The single configuration simplifies the design and installation process, making it a convenient option for various applications.

Surface Mount: YES

With surface mount capability, this diode can easily be integrated onto circuit boards, saving space and enhancing efficiency.

Maximum Reverse Current: 5 uA

The low maximum reverse current indicates minimal power loss and high efficiency in operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and secure mounting, ensuring stability in use.

No. of Terminals: 2

With two terminals, this diode offers straightforward connectivity and compatibility with standard circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suitable for compact designs, providing versatility in various electronic applications.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power conservation is a priority.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range ensures reliable performance in demanding environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for use in a wide range of temperature conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and connection, accommodating different circuit layouts.

Minimum Breakdown Voltage: 100 V

The minimum breakdown voltage of 100V indicates the diode's ability to withstand high voltages, enhancing safety and reliability.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this diode meets strict quality and reliability requirements for automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.995 V

The low maximum forward voltage results in minimal voltage drop across the diode, ensuring efficient power conversion.

Maximum Output Current: 3 A

With a maximum output current of 3A, this diode can handle high current loads, making it suitable for power electronics applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low forward voltage drop, enhancing overall performance.

Terminal Form: C BEND

The C bend terminal form simplifies soldering and mounting processes, ensuring a secure and reliable connection.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating indicates the diode's ability to withstand reverse voltage spikes, ensuring long-term reliability.

Maximum Non Repetitive Peak Forward Current: 50 A

With a maximum non-repetitive peak forward current of 50A, this diode can handle short-term high current surges without damage.

Diode Element Material: SILICON

Made with silicon, a commonly used semiconductor material, this diode offers high reliability and performance in various electronic applications.

Technical Specifications

Diodes & Rectifiers NRVTSA3100ET3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.995 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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